Semiconductor Science and Technology

Hydrogen effects on fabrication of SGOI by oxidation of SiGe layers on SOI wafers
pp. L1-L4(4)
Authors: Xinli Cheng; Zhilang Lin; Yongjin Wang; Haibo Xiao; Feng Zhang; Shichang Zou

Magnetic and optical properties of Ga_1-xMn_xN grown by metalorganic chemical vapour deposition
pp. L5-L9(5)
Authors: M.H. Kane; A. Asghar; C.R. Vestal; M. Strassburg; J. Senawiratne; Z.J. Zhang; N. Dietz; C.J. Summers; I.T. Ferguson

Pump–probe analysis of polaron decay in InAs/GaAs self-assembled quantum dots
pp. L10-L13(4)
Authors: F. Bras; S. Sauvage; P. Boucaud; J-M Ortega; J-M Gérard

A novel route to synthesize Cd_1-xPb_xSe thin films from solution phase
pp. 257-264(8)
Authors: P.P. Hankare; S.D. Delekar; P.A. Chate; S.D. Sabane; K.M. Garadkar; V.M. Bhuse

Energy gaps and optical phonon frequencies in InP_1-xSb_x
pp. 265-270(6)
Authors: Nadir Bouarissa; Smail Bougouffa; Ali Kamli

Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
pp. 271-278(8)
Authors: K.V. Vassilevski; N.G. Wright; I.P. Nikitina; A.B. Horsfall; A.G. O'Neill; M.J. Uren; K.P. Hilton; A.G. Masterton; A.J. Hydes; C.M. Johnson

Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InN
pp. 279-285(7)
Authors: E. Starikov; P. Shiktorov; V. Gruzinskis; L. Reggiani; L. Varani; J.C. Vaissière; C. Palermo

Electrical, thermoelectric and thermophysical properties of hornet cuticle
pp. 286-289(4)
Authors: D. Galushko; N. Ermakov; M. Karpovski; A. Palevski; J.S. Ishay; D.J. Bergman

Comparison between a graded and step-index optical cavity in InGaN MQW laser diodes
pp. 290-295(6)
Authors: Juan A. Martín; M. Sánchez

Dielectric properties of single crystal diamond
pp. 296-298(3)
Authors: Haitao Ye; Haixue Yan; Richard B. Jackman

Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz
pp. 299-304(6)
Authors: S.R. Pattanaik; G.N. Dash; J.K. Mishra

Effect of ion-induced defects and oxygen concentration in annealing atmosphere on formation of buried oxide layer in SIMOX materials
pp. 305-309(5)
Authors: Jing Chen; Xiang Wang; Bo Jin; Enxia Zhang; Jiayin Sun; Xi Wang

High efficiency white organic light-emitting devices by effectively controlling exciton recombination region
pp. 310-313(4)
Authors: Fawen Guo; Dongge; Lixiang Wang; Xiabin Jing; Fosong Wang

Clustering/declustering of silicon nanocrystals in spin-on glass solutions
pp. 314-319(6)
Authors: V. Svrcek; J.L. Rehspringer; A. Slaoui; B. Pivac; J-C Muller

Accurate and direct determination of interdiffusion parameters, a genetic algorithm approach
pp. 320-325(6)
Authors: O.M. Khreis; I.S. Al-Kofahi

High-efficiency electrophosphorescent white organic light-emitting devices with a double-doped emissive layer
pp. 326-329(4)
Authors: Wenfa Xie; Yi Zhao; Chuannan Li; Shiyong Liu

Unit capacitance distribution of a silicon nitride MIM capacitor in silicon wafer
pp. 330-333(4)
Authors: Yi Zhao; Xinggong Wan; Xiangming Xu