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Publisher: IOP Publishing

Volume 18, Number 6, 2003

Preparation of gallium-doped ZnO films by oxidized ZnS films
pp. L27-L30(4)
Author: Jayatissa, A.H.

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Giant suppression of shot noise in double barrier resonant diode: a signature of coherent transport
pp. L35-L38(4)
Authors: Aleshkin, V.Y.; Reggiani, L.; Alkeev, N.V.; Lyubchenko, V.E.; Ironside, C.N.; Figueiredo, J.M.L.; Stanley, C.R.

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Hydrogen annealing of grown-in voids in nitrogen-doped Czochralski grown silicon
pp. 399-403(5)
Authors: Yu, X.; Yang, D.; Ma, X.; Li, L.; Que, D.

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Sample curvature and dislocation density studies on ion-implanted GaAs by x-ray diffraction
pp. 404-408(5)
Authors: Nair, G.P.; Chandrasekaran, K.S.; Narsale, A.M.; Arora, B.M.; Kanjilal, D.

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Quantum efficiency of SiGe LEDs
pp. 409-416(8)
Authors: Stoica, T.; Vescan, L.

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InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth
pp. 417-422(6)
Authors: Putyato, M.A.; Bolkhovityanov, Y.B.; Chikichev, S.I.; Feklin, D.F.; Gilinsky, A.M.; Gutakovskii, A.K.; Preobrazhenskii, V.V.; Revenko, M.A.; Semyagin, B.R.; Chtcherbatchev, K.D.

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Negative magnetoresistance of polycrystalline thin Bi1-xSbx alloy films in quantizing magnetic fields
pp. 430-433(4)
Authors: Tolutis, R.; Tolutis, V.; Novickij, J.; Balevicius, S.

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Electrons in potential landscapes of random and correlated distributions of repulsive scatterers
pp. 434-441(8)
Authors: Buth, K.; Widmann, M.; Thieme, A.; Merkt, U.

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Negative differential conductivity and recombination instability of current in p-Ge(Au) in two-parametric space
pp. 442-444(3)
Authors: Kamilov, I.K.; Ibragimov, K.O.; Aliev, K.M.; Abakarova, N.S.

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A study of deep levels in vanadium-doped GaAs grown by OMVPE
pp. 445-448(4)
Authors: Bchetnia, A.; Rebey, A.; Bourgoin, J.C.; Eljani, B.

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Physical and electrical properties of sputtered Ru2Si3/Si structures
pp. 454-459(6)
Authors: Jelenkovic, E.V.; Tong, K.Y.; Cheung, W.Y.; Wong, S.P.

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Plasma and transit-time mechanisms of the terahertz radiation detection in high-electron-mobility transistors
pp. 460-469(10)
Authors: Satou, A.; Khmyrova, I.; Ryzhii, V.; Shur, M.S.

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Intense field effects on shallow donor impurities in graded quantum wells
pp. 470-474(5)
Authors: Sari, H.; Kasapoglu, E.; Sokmen, I.; Balkan, N.

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Solar cell with extremely thin absorber on highly structured substrate
pp. 475-479(5)
Authors: Ernst, K.; Belaidi, A.; Könenkamp, R.

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Effects of the linewidth enhancement factor on filamentation in 1.55 µm broad-area laser diodes
pp. 486-490(5)
Authors: Heo, D.C.; Han, I.K.; Lee, J.I.; Jeong, J.C.; Cho, S.H.

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Characterization of spray pyrolysed indium sulfide thin films
pp. 491-500(10)
Authors: John, T.T.; Bini, S.; Kashiwaba, Y.; Abe, T.; Yasuhiro, Y.; Kartha, C.S.; Vijayakumar, K.P.

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Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20 MeV protons
pp. 506-511(6)
Authors: Takakura, K.; Ohyama, H.; Ueda, A.; Nakabayashi, M.; Hayama, K.; Kobayashi, K.; Simoen, E.; Mercha, A.; Claeys, C.

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Electroluminescent ZnS-Cu films made by metal-organic chemical vapour deposition and thermodiffusion
pp. 512-516(5)
Authors: Khomchenko, V.; Rodionov, V.; Zavyalova, L.; Svechnikov, G.; Roshchina, N.; Khachatryan, V.; Savin, A.; Bacherikov, Y.; Marchilo, O.; Tzyrkunov, Y.; Stiles, J.

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'Semi-insulating' silicon using deep level impurity doping: problems and potential
pp. 517-524(8)
Authors: Mallik, K.; Falster, R.J.; Wilshaw, P.R.

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Influence of thermal annealing on optical and electrical properties of ZnO films prepared by electron beam evaporation
pp. 525-529(5)
Authors: Aghamalyan, N.R.; Gambaryan, I.A.; Goulanian, E.K.; Hovsepyan, R.K.; Kostanyan, R.B.; Petrosyan, S.I.; Vardanyan, E.S.; Zerrouk, A.F.

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Dry-etch damage and its recovery in InGaN/GaN multi-quantum-well light-emitting diodes
pp. 530-534(5)
Authors: Lee, J-M.; Huh, C.; Kim, D-J.; Park, S-J.

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Quantum well intermixing enhanced by InP grown by He-plasma assisted GaS source MBE
pp. 535-540(6)
Authors: Zhang, S.; Thompson, D.A.; Robinson, B.J.

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Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN
pp. 541-544(4)
Authors: Reddy, V.R.; Kim, S-H.; Song, J.O.; Seong, T-Y.

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Optically-induced non-linear optical effects in indium-tin oxide crystalline films
pp. 549-553(5)
Authors: Kityk, I.V.; Ebothé, J.; Miedzinski, R.; Addou, M.; Sieder, H.; Karafiat, A.

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Improved electrical characterization of Al-Ti ohmic contacts on p-type ion implanted 6H-SiC
pp. 554-559(6)
Authors: Moscatelli, F.; Scorzoni, A.; Poggi, A.; Cardinali, G.C.; Nipoti, R.

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Influence of laser irradiation and laser-induced In doping on the photoluminescence of CdTe crystals
pp. 560-565(6)
Authors: Gnatyuk, V.A.; Aoki, T.; Niraula, M.; Hatanaka, Y.

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Monte Carlo simulation of Schottky contact with direct tunnelling model
pp. 576-581(6)
Authors: Sun, L.; Liu, X.Y.; Liu, M.; Du, G.; Han, R.Q.

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Novel optical devices based on surface wave excitation at conducting interfaces
pp. 582-588(7)
Authors: Mehrany, K.; Khorasani, S.; Rashidian, B.

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On the low frequency noise mechanisms in GaN/AlGaN HFETs
pp. 589-593(5)
Authors: Rumyantsev, S.L.; Deng, Y.; Shur, S.; Levinshtein, M.E.; Khan, M.A.; Simin, G.; Yang, J.; Hu, X.; Gaska, R.

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Optical and electrical properties of TiN/n-GaN contacts in correlation with their structural properties
pp. 594-601(8)
Authors: Gautier, S.; Komninou, P.; Patsalas, P.; Kehagias, T.; Logothetidis, S.; Dimitriadis, C.A.; Nouet, G.

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Semi-insulating porous SiC substrates
pp. 602-606(5)
Authors: Mynbaeva, M.G.; Mynbaev, K.D.; Ivantsov, V.A.; Lavrent'ev, A.A.; Grayson, B.A.; Wolan, J.T.

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