Quantization effects in hole inversion layers of tunnel MOS emitter transistors on Si (100) and (111) substrates at T = 300 K
Authors: Shulekin A.F.1; Vexler M.I.2; Zimmermann H.2
Source: Semiconductor Science and Technology, Volume 14, Number 5, 1999 , pp. 470-477(8)
Publisher: Institute of Physics Publishing
- Free Content
- New Content
- Subscribed Content
- Free Trial Content
Abstract:
The 2D consideration of the hole gas in the inversion layer is shown to be essential for a correct estimation of the currents flowing in the tunnel MOS structure on (100) n-Si and (111) n-Si substrates. The classical (3D) treatment is found to lead to significant errors in the predicted distribution of the applied voltage, which results in incorrect evaluation of currents and makes the performance of a careful analysis of the energy relaxation of injected hot electrons impossible. A complete quantum treatment for an inversion should be based on the self-consistent solution of Poisson-Schr?dinger equations, as is done for MOSFETs. The hole tunnel current is to be calculated as a sum of currents from discrete levels. A simplified quantum approximation is also examined for the tunnel MOS structure. The quantization effects are shown to be important in almost all practically interesting operational modes, especially for high insulator bias and high doping concentration.
Language: English
Document Type: Miscellaneous
Affiliations: 1: A F Ioffe Physicotechnical Institute, Polytechnicheskaya 26, 194021 St Petersburg, Russia 2: Lehrstuhl für Halbleitertechnik, Christian-Albrechts-Universität zu Kiel, Kaiserstraße 2, D-24143 Kiel, Germany
- Free Content
- New Content
- Subscribed Content
- Free Trial Content
Click here for Page Help