Abstract:

We report on optical absorption of the interband transitions in zero-net strained multiple quantum wells (MQW) grown by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE), using tertiarybutylarsine as a group V source. Sharp interfaces are obtained using a growth interruption procedure. Analysis of this procedure with different interruption times leads to the same optimal times as those obtained for InP/InAsP superlattices grown in the same reactor. We have achieved the growth of modulation-free strain-balanced heterostructures, as indicated by cross-sectional transmission electron microscopy. High-resolution x-ray diffraction and optical absorption analysis demonstrate the high crystallographic and optical quality of these structures. The absorption spectrum of an x = 0.06, y = 0.14 sample was accurately fitted using the Bastard/Marzin model, and a strained conduction band offset of was deduced. This corresponds to about of the total strained bandgap difference.

Language: English

Document Type: Miscellaneous

Affiliations: 1: Groupe de Recherche en Physique et Technologie des Couches Minces (GCM) and D?partement de G?nie Physique, ?cole Polytechnique de Montr?al, CP 6079, succ Centre Ville, Montr?al, Qu?bec, Canada H3C 3A7 2: Groupe de Recherche en Physique et Technologie des Couches Minces (GCM) and D?partement de Physique, Universit? de Montr?al, CP 6128, succ Centre Ville, Montr?al, Qu?bec, Canada H3C 3J7 3: Centre de Caract?risation Microscopique des Mat?riaux (CM)2 and D?partement de M?tallurgie et de G?nie des Mat?riaux, ?cole Polytechnique de Montr?al, CP 6079, succ Centre Ville, Montr?al, Qu?bec, Canada H3C 3A7