@article {Ababou:1997:0268-1242:550,
	author = "Ababou Y.",
	author = "Desjardins P.",
	author = "Chennouf A.",
	author = "Masut R.A.",
	author = "Yelon A.",
	author = "Beaudoin M.",
	author = "Bensaada A.",
	author = "Leonelli R.",
	author = "L'Esprance G.",
	title = "Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapour phase epitaxy",
	journal = "Semiconductor Science and Technology",
	volume = "12",
	year = "1997",
	abstract = "<P><I>We report on optical absorption of the interband transitions in zero-net strained multiple quantum wells (MQW) grown by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE), using tertiarybutylarsine as a group V source. Sharp interfaces are obtained using a growth interruption procedure. Analysis of this procedure with different interruption times leads to the same optimal times as those obtained for InP/InAsP superlattices grown in the same reactor. We have achieved the growth of modulation-free strain-balanced heterostructures, as indicated by cross-sectional transmission electron microscopy. High-resolution x-ray diffraction and optical absorption analysis demonstrate the high crystallographic and optical quality of these structures. The absorption spectrum of an x = 0.06, y = 0.14 sample was accurately fitted using the Bastard/Marzin model, and a strained conduction band offset of was deduced. This corresponds to about of the total strained bandgap difference.</I></P>",
	pages = "550-554(5)",
	url = "http://www.ingentaconnect.com/content/iop/sst/1997/00000012/00000005/art00006"
}