Semiconductor Science and Technology

Experimental evidence for composite fermions
pp. 495-524(30)
Author: Willett R.L.

High-field Fowler - Nordheim stress of n-type silicon carbide metal-oxide-semiconductor capacitors
pp. 525-528(4)
Authors: Bano E.; Ouisse T.; Leonhard C.; Glz A.; Kamienski E.G.S.v.

Transport properties of quantum wires in spatially periodic magnetic and electrostatic fields
pp. 529-534(6)
Authors: Ji Z-L.; Sprung D.W.L.

Electroluminescence from double-barrier resonant-tunnelling structures
pp. 535-543(9)
Authors: Kindlihagen A.; Chao K.A.; Willander M.

Third-order nonlinear optical susceptibility of wide-bandgap nitrides
pp. 544-549(6)
Authors: Nayak S.K.; Sahu T.; Mohanty S.P.; Misra P.K.

Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapour phase epitaxy
pp. 550-554(5)
Authors: Ababou Y.; Desjardins P.; Chennouf A.; Masut R.A.; Yelon A.; Beaudoin M.; Bensaada A.; Leonelli R.; L'Esprance G.

Investigation of Si as an n-type dopant in AlGaAs grown by molecular beam epitaxy on high index planes
pp. 555-563(9)
Authors: Galbiati N.; Grilli E.; Guzzi M.; Albertini P.; Brusaferri L.; Pavesi L.; Henini M.; Gasparotto A.

Electrical properties of two-source evaporated polycrystalline films
pp. 564-569(6)
Authors: Rao K.P.; Hussain O.M.; Naidu B.S.; Reddy P.J.

Random porous silicon multilayers: application to distributed Bragg reflectors and interferential Fabry - P?rot filters
pp. 570-575(6)
Authors: Pavesi L.; Dubos P.

The embryonic form of the integrated superluminescent diode
pp. 576-579(4)
Authors: Zhao Y.; Devane G.; Sun Z.; Stair K.A.; Liu Y.; Du G.; Chang R.P.H.

A model for quantum efficiency and detectivity of and photodiodes
pp. 580-588(9)
Authors: Dhar V.; Ashokan R.

Transit time of electrons and holes in micron and submicron MSM photodetectors
pp. 589-594(6)
Authors: Gvozdic D.M.; Radunovic J.B.

Electrophotographic photoreceptors including selenium-based multilayers
pp. 595-599(5)
Authors: Nesheva D.; Arsova D.; Vateva E.

Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices
pp. 600-608(9)
Authors: Bayhan H.; Erelebi C.

Electrical characteristics of (n)-InP MIS diodes with a interfacial layer deposited at low temperature
pp. 609-613(5)
Authors: Hbib H.; Bonnaud O.; Fortin B.

Multiple quantized switching behaviours (MQSB) of functional heterostructure-emitter bipolar transistors (HEBTs) with multiple carrier confinement heterostructures
pp. 614-622(9)
Authors: Liu W-C.; Tsai J-H.; Laih L-W.; Cheng S-Y.

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters
pp. 623-630(8)
Authors: Mazumder N.; Roy S.K.

Multiple-gated submicron vertical tunnelling structures
pp. 631-636(6)
Authors: Austing D.G.; Honda T.; Tarucha S.

Structural and optical analysis of epitaxial GaN on sapphire
pp. 637-644(8)
Authors: Strau U.; Tews H.; Riechert H.; Averbeck R.; Schienle M.; Jobst B.; Volm D.; Streibl T.; Meyer B.K.; Rhle W.W.

Chemical deposition of bismuth selenide thin films using N,N-dimethylselenourea
pp. 645-653(9)
Authors: Garca V.M.; Nair M.T.S.; Nair P.K.; Zingaro R.A.