An MOS transistor with an optical rectification controlled gate

Author: Moagar-Poladian G.

Source: Semiconductor Science and Technology, Volume 12, Number 2, 1997 , pp. 210-216(7)

Publisher: Institute of Physics Publishing

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Abstract:

In this paper we present a new kind of photodetector, based on optical rectification in MOS transistors. The main characteristic of this type of photodetector is that it does not absorb the incident radiation. We deduce its lux-amperic characteristics and estimate the magnitude of its responsivity. The same principles can be applied to HEMT transistors.

Language: English

Document Type: Miscellaneous

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