Excimer laser assisted spin-on doping of boron into silicon

Authors: Lo V.C.¹; Wong Y.W.¹; Cho H.C.¹; Chen Y.Q.¹; Ho S.M.¹; Chan P.W.¹; Tong K.Y.²

Source: Semiconductor Science and Technology, Volume 11, Number 9, 1996 , pp. 1285-1290(6)

Buy & download fulltext article:

Price: $44.11 plus tax (Refund Policy)

Abstract:

n-type silicon wafers were doped by boron using a spin-on doping method. A XeCl pulsed excimer laser was used to irradiate the sample at room temperature. Properties such as sheet resistance, carrier concentration profile, Hall mobility and structural defects were then determined. The results show that the sheet resistance decreases with an increase of laser fluence as well as with an increase in pulse number. It attains a low value of for laser fluence above . An optimal doping profile with surface carrier concentration of and a junction depth of was achieved by 25 pulses of irradiation. Channelled Rutherford backscattering spectroscopy showed that no obvious lattice damage exists in the doped Si wafer.

Language: English

Document Type: Miscellaneous

Affiliations: 1: Department of Applied Physics, Hong Kong Polytechnic University, Kowloon, Hong Kong 2: Department of Electronic Engineering, Hong Kong Polytechnic University, Kowloon, Hong Kong

Publication date: 1996-01-01