Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors

Authors: Koo, Sang-Mo; Edelstein, Monica D.; Li, Qiliang; Richter, Curt A.; Vogel, Eric M.

Source: Nanotechnology, Volume 16, Number 9, September 2005 , pp. 1482-1485(4)

Publisher: Institute of Physics Publishing

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Abstract:

Silicon nanowire field-effect transistors (SiNWFETs) have been fabricated with a highly simplified integration scheme to function as Schottky barrier transistors with excellent enhancement-mode characteristics and a high on/off current ratio ~107. SiNWFETs show significant improvement in the thermal emission leakage (~6 × 10-13 A µm-1) compared to reference FETs with a larger channel width (~7 × 10-10 A µm-1). The drain current level depends substantially on the contact metal work function as determined by examining devices with different source/drain contacts of Ti (ap4.33 eV) and Cr (ap4.50 eV). The different conduction mechanisms for accumulation- and inversion-mode operation are discussed and compared with two-dimensional numerical simulation results.

Document Type: Research article

DOI: 10.1088/0957-4484/16/9/011

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