Biexciton and exciton dynamics in single InGaN quantum dots

Authors: Rice, James H.; Robinson, James W.; Na, Jong H.; Lee, Kwan H.; Taylor, Robert A.; Williams, David P.; O'Reilly, Eoin P.; Andreev, Aleksey D.; Arakawa, Yasuhiko; Yasin, Shazia

Source: Nanotechnology, Volume 16, Number 9, September 2005 , pp. 1477-1481(5)

Publisher: Institute of Physics Publishing

Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content

Abstract:

Time-resolved and time-integrated microphotoluminescence spectrometry of exciton and biexciton transitions in a single self-assembled InGaN quantum dot gives sharp peaks, with the biexciton 41 meV higher in energy. Theoretical modelling in the Hartree approximation (using a self-consistent finite difference method) predicts a splitting of up to 51 meV. Time-resolved microphotoluminescence measurements yield a radiative recombination lifetime of 1.0 ± 0.1 ns for the exciton and 1.4 ± 0.1 ns for the biexciton. The data can be fitted to a coupled DE rate equation model, confirming that the exciton state is refilled as biexcitons undergo radiative decay.

Document Type: Research article

DOI: 10.1088/0957-4484/16/9/010

The full text electronic article is available for purchase. You will be able to download the full text electronic article after payment.

$42.18 plus tax      Refund Policy

 

OR

Back to top

Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages.
Page Help Click here for Page Help
Shopping cart
Tools
Sign in






Need to register?
Sign up here
Text size: A | A | A | A