Raman study of self-assembled SiGe nanoislands grown at low temperatures

Authors: Valakh, M Ya; Yukhymchuk, V.O.; Dzhagan, V.M.; Lytvyn, O.S.; Milekhin, A.G.; Nikiforov, A.I.; Pchelyakov, O.P.; Alsina, F.; Pascual, J.

Source: Nanotechnology, Volume 16, Number 9, September 2005 , pp. 1464-1468(5)

Publisher: Institute of Physics Publishing

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Abstract:

We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the Ge–Ge frequency range for nanoislands grown at substrate temperatures ranging in the interval 300–500 °C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell.

Document Type: Research article

DOI: 10.1088/0957-4484/16/9/007

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