Raman study of self-assembled SiGe nanoislands grown at low temperatures

Authors: Valakh, M Ya; Yukhymchuk, V.O.; Dzhagan, V.M.; Lytvyn, O.S.; Milekhin, A.G.; Nikiforov, A.I.; Pchelyakov, O.P.; Alsina, F.; Pascual, J.

Source: Nanotechnology, Volume 16, Number 9, September 2005 , pp. 1464-1468(5)

Publisher: IOP Publishing

Purchase options

The full text electronic article is available for purchase. You will be able to download the full text electronic article after payment.

$39.88 plus tax      Refund Policy

OR

 
More like this?
Content Key:
Free Content - Free
New Content - New
Open Access Content - Open Access
Subscribed Content - Subscribed
Free Trial Content - Free Trial

Abstract:

We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the Ge–Ge frequency range for nanoislands grown at substrate temperatures ranging in the interval 300–500 °C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell.

Document Type: Research article

DOI: 10.1088/0957-4484/16/9/007

Back to top

Content Key:
Free Content - Free
New Content - New
Open Access Content - Open Access
Subscribed Content - Subscribed
Free Trial Content - Free Trial
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages.
Page Help Click here for Page Help
Shopping cart
Tools
Sign in
Need to register?
Sign up here
Text size: A | A | A | A