Configuration interaction applied to resonant states in semiconductors and semiconductor nanostructures

Authors: Prokofiev A.A.1; Yassievich I.N.1; Blom A.2; Odnoblyudov M.A.2; Chao K-A.2

Source: Nanotechnology, Volume 12, Number 4, 2001 , pp. 457-461(5)

Publisher: Institute of Physics Publishing

Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content

Abstract:

A new approach for calculation of resonant state parameters is developed. The method proposed allows us to solve different scattering problems, such as scattering and capture probability as well as calculations of shifts and widths of energy levels. It has been applied to the problem of resonant states induced by impurities in the barrier of quantum wells and by strain in uniaxially stressed germanium.

Language: English

Document Type: Miscellaneous

Affiliations: 1: Ioffe Physico-Technical Institute, RAS, 194021 St Petersburg, Russia 2: Fasta Tillst?ndets Teori, S?lvegatan 14 A, S-223 62 Lund, Sweden

The full text electronic article is available for purchase. You will be able to download the full text electronic article after payment.

$42.00 plus tax      Refund Policy

 

OR

Back to top

Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages.
Page Help Click here for Page Help
Shopping cart
Tools
Sign in






Need to register?
Sign up here
Text size: A | A | A | A