Nanotechnology

A new technique for fabricating three-dimensional micro- and nanostructures of various shapes
pp. 399-402(4)
Authors: Prinz V.Y.; Grtzmacher D.; Beyer A.; David C.; Ketterer B.; Deckardt E.

Formation of CaF₂ nanostructures on Si(001)
pp. 403-408(6)
Authors: Pasquali L.; D'Addato S.; Selvaggi G.; Nannarone S.; Sokolov N.S.; Suturin S.M.; Zogg H.

Pulsed ion-beam synthesis of -FeSi₂ precipitate layers in Si(100)
pp. 409-412(4)
Authors: Batalov R.I.; Bayazitov R.M.; Khaibullin I.B.; Terukov E.I.; Kudoyarova V.K.

Schwoebel barriers and quantum dot lateral size equalization during epitaxial growth
pp. 413-416(4)
Authors: Brunev D.V.; Neizvestny I.G.; Shwartz N.L.; Yanovitskaja Z.S.

Optical and structural properties of Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy
pp. 417-420(4)
Authors: Cirlin G.E.; Egorov V.A.; Volovik B.V.; Tsatsul'nikov A.F.; Ustinov V.M.; Ledentsov N.N.; Zakharov N.D.; Werner P.; Gsele U.

Interface reconstruction in GaAs/AlAs ultrathin superlattices grown on (311) and (001) surfaces
pp. 421-424(4)
Authors: Efremov M.D.; Volodin V.A.; Sachkov V.A.; Preobrazhenski V.V.; Semyagin B.R.; Bolotov V.V.; Galaktionov E.A.; Kretinin A.V.

Morphology and photoelectronic properties of InAs/GaAs surface quantum dots grown by metal-organic vapour-phase epitaxy
pp. 425-429(5)
Authors: Karpovich I.A.; Baidus N.V.; Zvonkov B.N.; Morozov S.V.; Filatov D.O.; Zdoroveishev A.V.

MBE growth of high-quality GaAsN bulk layers
pp. 430-433(4)
Authors: Wang J.S.; Kovsh A.R.; Wei L.; Chi J.Y.; Wu Y.T.; Wang P.Y.; Ustinov V.M.

Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD
pp. 434-436(3)
Authors: Marmalyuk A.A.; Govorkov O.I.; Petrovsky A.V.; Nikitin D.B.; Padalitsa A.A.; Bulaev P.V.; Budkin I.V.; Zalevsky I.D.

Quantum dots of Ge in a GaAs/ZnSe/Ge unstrained heterosystem: fabrication and properties
pp. 437-440(4)
Authors: Neizvestny I.G.; Suprun S.P.; Shumsky V.N.; Talochkin A.B.; Fedosenko E.V.; Burbaev T.M.; Kurbatov V.A.

Spatially indirect excitons in self-assembled Ge/Si quantum dots
pp. 441-446(6)
Authors: Yakimov A.I.; Dvurechenskii A.V.; Stepina N.P.; Nenashev A.V.; Nikiforov A.I.

Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures
pp. 447-449(3)
Authors: Shalygin V.A.; Vorobjev L.E.; Glukhovskoy A.V.; Danilov S.N.; Panevin V.Y.; Firsov D.A.; Volovik B.V.; Ledentsov N.N.; Livshits D.A.; Ustinov V.M.; Shernyakov Y.M.; Tsatsul'nikov A.F.; Weber A.; Grundmann M.

Resonant parametric generation of infrared radiation on intersubband transitions in low-dimensional semiconductor heterostructures
pp. 450-452(3)
Authors: Belyanin A.A.; Capasso F.; Kocharovsky V.V.; Kocharovsky V.V.; Pestov D.S.; Scully M.O.

Time constant of the far-IR response of a quantum Hall device
pp. 453-456(4)
Authors: Erofeeva I.V.; Gavrilenko V.I.; Komiyama S.

Configuration interaction applied to resonant states in semiconductors and semiconductor nanostructures
pp. 457-461(5)
Authors: Prokofiev A.A.; Yassievich I.N.; Blom A.; Odnoblyudov M.A.; Chao K-A.

Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
pp. 462-465(4)
Authors: Vorobjev L.E.; Danilov S.N.; Gluhovskoy A.V.; Zerova V.L.; Zibik E.A.; Panevin V.Y.; Firsov D.A.; Shalygin V.A.; Andreev A.D.; Volovik B.V.; Zhukov A.E.; Ledentsov N.N.; Livshits D.A.; Ustinov V.M.; Shernyakov Y.M.; Tsatsulnikov A.F.; Weber A.; Grundmann M.; Schmidt S.R.; Seilmeier A.; Towe E.; Pal D.

Excitons in nitride-based low-dimensional systems
pp. 466-470(5)
Author: Gil B.

Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers
pp. 471-474(4)
Authors: Shmidt N.M.; Emtsev V.V.; Kolmakov A.G.; Kryzhanovsky A.D.; Lundin W.V.; Poloskin D.S.; Ratnikov V.V.; Titkov A.N.; Usikov A.S.; Zavarin E.E.

Nonlinear effects in a dense two-dimensional exciton-polariton system in semiconductor microcavities
pp. 475-479(5)
Authors: Kulakovskii V.D.; Tartakovskii A.I.; Krizhanovskii D.N.; Gippius N.A.; Skolnick M.S.; Roberts J.S.

Guided plasmon-polaritons in a planar Bragg microresonator with a two-dimensional electron system
pp. 480-484(5)
Authors: Popov V.V.; Tsymbalov G.M.; Teperik T.V.

Electrostatic force microscopy: principles and some applications to semiconductors
pp. 485-490(6)
Author: Girard P.

Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling
pp. 491-495(5)
Authors: Dubrovskii Y.V.; Vdovin E.E.; Patan A.; Brounkov P.N.; Larkin I.A.; Eaves L.; Main P.C.; Maude D.K.; Portal J-C.; Ivanov D.Y.; Khanin Y.N.; Sirotkin V.V.; Levin A.; Henini M.; Hill G.

Tip-shape effects on electrostatic force microscopy resolution
pp. 496-499(4)
Authors: Gmez-Moivas S.; Froufe L.S.; Carminati R.; Greffet J.J.; Senz J.J.

Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure using C-Vprofiling
pp. 500-503(4)
Authors: Kokorev M.F.; Maleev N.A.; Pakhnin D.V.; Zhukov A.E.; Ustinov V.M.

Resonant -X-transfer in GaAs/AlAs quantum-well structures
pp. 504-507(4)
Authors: Schmidt S.R.; Seilmeier A.; Zibik E.A.; Vorobjev L.E.; Zhukov A.E.; Ustinov V.M.

Raman study of phonon-plasmon coupling modes in tunnelling GaAs/AlAs superlattices, grown on (311) and (001) surfaces
pp. 508-511(4)
Authors: Volodin V.A.; Efremov M.D.; Sachkov V.A.; Preobrazhenski V.V.; Semyagin B.R.; Galaktionov E.A.; Orehov D.A.

Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates
pp. 512-514(3)
Authors: Shkolnik A.S.; Dogonkin E.B.; Evtikhiev V.P.; Kotelnikov E.Y.; Kudryashov I.V.; Talalaev V.G.; Novikov B.V.; Tomm J.W.; Gobsch G.

Double injection currents in p-i-n diodes incorporating self-assembled quantum dots
pp. 515-517(3)
Authors: Belyaev A.E.; Patan A.; Eaves L.; Main P.C.; Henini M.; Danylyuk S.V.

Homogeneous broadening of the zero-optical-phonon spectral line in semiconductor quantum dots
pp. 518-522(5)
Authors: Goupalov S.V.; Suris R.A.; Lavallard P.; Citrin D.S.

Non-equilibrium carriers and recombination phenomena in type-II quantum dots
pp. 523-528(6)
Authors: Shik A.; Ruda H.; Sargent E.H.

On the role of electron exchange and correlation in semiconductor quantum dots
pp. 529-532(4)
Authors: Berggren K-F.; Yakimenko I.I.; Bychkov A.M.

Spectrum of quasi-two-dimensional plasmons in strong magnetic fields
pp. 533-535(3)
Authors: Volkov V.A.; Takhtamirov E.E.

A silicon-based nuclear magnetic resonance (NMR) quantum computer using resonant transfer of a single electron for the inter-qubit interaction
pp. 536-539(4)
Authors: Larionov A.A.; Fedichkin L.E.; Valiev K.A.

Silver halide micro- and nanocrystals embedded in an alkali halide matrix: suppression of the Jahn-Teller effect in nanoparticles
pp. 540-546(7)
Authors: Baranov P.G.; Romanov N.G.; Khramtsov V.A.; Vikhnin V.S.

Nanocrystalline Zn₂SiO₄:Mn²⁺ grown in oxidized porous silicon
pp. 547-551(5)
Authors: Taghavinia N.; Lerondel G.; Makino H.; Yamamoto A.; Yao T.; Kawazoe Y.; Goto T.

New quantum dot transistor
pp. 552-555(4)
Authors: Mokerov V.G.; Fedorov Y.V.; Velikovski L.E.; Scherbakova M.Y.

The dynamic nature of peculiarities of RTS static I-V characteristic
pp. 556-561(6)
Authors: Poltoratsky E.A.; Rychkov G.S.

Quantum chaos among nodal points and streamlines at ballistic electron transport through open quantum dots
pp. 562-565(4)
Authors: Berggren K-F.; Sadreev A.F.; Starikov A.A.

Conductivity of modulation-doped AlGaAs/GaAs/AlGaAs quantum well with an inserted thin AlAs barrier
pp. 566-569(4)
Authors: Pozela K.; Pozela J.; Jucien V.

Transport of magnetic edge states in a quantum wire exposed to a non-homogeneous magnetic field
pp. 570-576(7)
Authors: Badalyan S.M.; Peeters F.M.

Persistent photoconductivity in p-type Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As heterostructures
pp. 577-580(4)
Authors: Kraak W.; Minina N.Y.; Savin A.M.; Ilievsky A.A.; Berman I.V.; Sorensen C.B.

One- and two-colour superradiant lasing in magnetized quantum-well heterostructures
pp. 581-584(4)
Authors: Belyanin A.A.; Kocharovsky V.V.; Kocharovsky V.V.; Pestov D.S.

Fine structure of excitons and e-h pairs in GaAs/AlAs superlattices at the X- crossover
pp. 585-590(6)
Authors: Romanov N.G.; Baranov P.G.

Formation of charged excitonic complexes in shallow quantum wells of undoped GaAs/AlGaAs structures under below-barrier and above-barrier photoexcitation
pp. 591-596(6)
Authors: Sibeldin N.N.; Skorikov M.L.; Tsvetkov V.A.

Singlet and triplet states of X⁺ and X^- trions in two-dimensional quantum wells
pp. 597-601(5)
Authors: Sergeev R.A.; Suris R.A.

Resonant exciton-phonon spectra in a ZnCdSe/ZnSe single quantum well
pp. 602-606(5)
Authors: Travnikov V.V.; Kaibyshev V.H.; Lomasov N.V.; Nesterov S.I.; Skopina V.I.; Tanklevskaya E.M.; Puls J.; Rabe M.; Henneberger F.

Interaction of excitons localized by a CdTe/ZnTe quantum well fluctuation potential with nonequilibrium acoustic phonons
pp. 607-609(3)
Authors: Onishchenko E.E.; Bagaev V.S.; Zaitsev V.V.; Galkina T.I.; Sharkov A.I.

Nonlinear absorption of surface acoustic waves by composite fermions
pp. 610-613(4)
Authors: Bergli J.; Galperin Y.M.

Simulation approach to weak localization in inhomogeneous two-dimensional systems and diffusive constrictions
pp. 614-618(5)
Authors: Germanenko A.V.; Minkov G.M.; Rut O.E.

Resonant magneto-optical phenomena associated with eigen-oscillations of a two-dimensional electron plasma
pp. 619-624(6)
Authors: Popov V.V.; Teperik T.V.

Challenges in nanoelectronics
pp. 625-628(4)
Author: Tsu R.

Author Index with titles
pp. 629-634(6)