Elastically strain-sharing nanomembranes: flexible and transferable strained silicon and silicon-germanium alloys

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In this Subject: Physics (General)
By this author: Scott, Shelley A. ;&nbsp; Lagally, Max G.

Authors: Scott, Shelley A.; Lagally, Max G.

Source: Journal of Physics D: Applied Physics, Volume 40, Number 4, 21 February 2007 , pp. R75-R92(18)

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Abstract:

The emerging field of strained-Si based nanomembranes is reviewed, including fabrication techniques, strain-induced band structure engineering, electronic applications and three-dimensional membrane architectures. Elastic strain sharing between thin heteroepitaxial Si and SiGe films, enabled by techniques that allow release of these films from a handling substrate, creates a new material: freestanding, single-crystal, strained nanomembranes. These flexible nanomembranes are virtually dislocation-free and have many potential new applications. Strain engineering also provides opportunities for massively parallel self-assembly of a wide variety of three-dimensional nanostructures.

Document Type: Research article

DOI: http://dx.doi.org/10.1088/0022-3727/40/4/R01

Publication date: 2007-02-21