Magnetoelectronics with magnetoelectrics

Authors: Ch Binek; B. Doudin

Source: Journal of Physics: Condensed Matter, Volume 17, Number 2, 19 January 2005 , pp. L39-L44(1)

Publisher: Institute of Physics Publishing

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Abstract:

Magnetoelectric films are proposed as key components for spintronic applications. The net magnetic moment created by an electric field in a magnetoelectric thin film influences the magnetization state of a neighbouring ferromagnetic layer through exchange coupling. Pure electrical control of magnetic configurations of giant magnetoresistance spin valves and tunnelling magnetoresistance elements is therefore achievable. Estimates based on documented magnetoelectric tensor values show that exchange fields reaching 100 mT can be obtained. We propose a mechanism alternative to current-induced magnetization switching, providing access to a wide range of device impedance values and opening the possibility of simple logic functions.

Document Type: Research article

DOI: 10.1088/0953-8984/17/2/L06

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