Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors)
Authors: Farahmand M.1; Weber M.2; Tirino L.2; Brennan K.F.2; Ruden P.P.3
Source: Journal of Physics: Condensed Matter, Volume 13, Number 46, 2001 , pp. 10477-10486(10)
Publisher: Institute of Physics Publishing
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Abstract:
In this paper, we present a comparison of the direct-current (DC) and radio-frequency (RF) breakdown behaviours of representative wurtzite- and zinc-blende-phase GaN MESFET structures based on a theoretical analysis. The calculations are made using a full-band ensemble Monte Carlo simulation that includes a numerical formulation of the impact ionization transition rate. Calculations of both the DC and RF breakdown voltages are presented for submicron MESFET devices made from either wurtzite- or zinc-blende-phase GaN. The devices are otherwise identical. It is found that the DC breakdown voltage in the wurtzite-phase GaN MESFET is significantly larger than that in the zinc-blende-phase device. This is due to the fact that electron heating occurs more rapidly within the zinc-blende phase than the wurtzite phase of GaN. As a consequence, avalanche breakdown occurs at higher applied field strengths and voltages in the wurtzite phase than in the zinc-blende phase of GaN. It is further found that the RF breakdown voltage of the devices increases with increasing frequency of the applied large-signal RF excitation.
Language: English
Document Type: Miscellaneous
Affiliations: 1: Movaz Networks, One Technology Parkway, South Norcross, GA 30092, USA 2: School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA 30332-0250, USA 3: Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA
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