Modification of the gapless state in non-uniform semiconductor alloys

In this: publication
By this: publisher
In this Subject: Nuclear Physics ,&nbsp; Physics (General)
By this author: Strikha M.V. ;&nbsp; Vasko F.T.

Authors: Strikha M.V.; Vasko F.T.

Source: Journal of Physics: Condensed Matter, Volume 12, Number 17, 2000 , pp. 4141-4149(9)

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Abstract:

Semiconductor alloy with spatially non-uniform change of composition close to the averaged value, corresponding to the transition between gapless and narrow-gap states, is studied. The density of states is calculated within the two-band model of band structure with random change of the position of the conduction band bottom and with a uniform valence band top. The appearance of an inhomogeneity-induced gap in the energy dependence of the density of states is discussed for the cases of short-range and long-range non-uniformities of composition. The peculiarities of the kinetic effects due to modification of the gapless state in such non-uniform semiconductors are discussed.

Language: English

Document Type: Miscellaneous

Publication date: 2000-01-01