@article {Zhen:2001:0256-307X:1418,
	author = "Zhen C. and Da-Cheng L. and Xiao-Hui W. and Xiang-Lin L. and Pei-De H. and Hai-Rong Y. and Du W. and Zhan-Guo W. and Shi-Tang H. and Hong-Lang L. and Li Y. and Xiao-Yang C.",
	title = "Surface Acoustic Wave Velocity and Electromechanical Coupling Coefficient of GaN Grown on (0001) Sapphire by Metal-Organic Vapour Phase Epitaxy",
	journal = "Chinese Physics Letters",
	volume = "18",
	number = "10",
	year = "2001",
	abstract = "<P>High-quality and high-resistivity GaN films were grown on (0001) sapphire face by metal-organic vapour phase epitaxy. To measure the surface acoustic wave properties accurately, we deposited metallized interdigital transducers on the GaN surface. The acoustic surface wave velocity and electromechanical coupling coefficient were measured, respectively, to be 5667&#160;m/s and 1.9% by the pulse method.</P>",
	pages = "1418-1419",
	url = "http://www.ingentaconnect.com/content/iop/cpl/2001/00000018/00000010/art00338"
}