Effect of oxygen pressure on room‐temperature ferromagnetism of Al co‐doped Mn doped ZnO thin films prepared by pulsed laser deposition
Source: International Journal of Nanotechnology, Volume 7, Numbers 9-10, 2010 , pp. 1047-1053(7)
Publisher: Inderscience Publishers
Abstract:Thin films of Al and Mn doped ZnO (Zn0.97Mn0.02Al0.01O) were made using Pulsed Laser Deposition technique (PLD) on Si substrates maintained at a constant temperature of 400°C, under varying pressures of oxygen (O2) and at a fixed pressure of 400 bar nitrogen (N2) atmospheres. X‐ray diffraction (XRD) patterns of the deposited films indicated that they are predominantly oriented in the  direction. Magnetisation measurements as a function of field on these samples showed that the magnetic moment is sensitive to the O2 pressure and the film deposited at 400 bar of O2 pressure shows significantly increased magnetic moment (4.44 B/Mn) compared to other films. Depositing the film in N2 atmosphere or changing the O2 pressure to higher or lower values affected the magnetisation adversely. Magnetisation measurement, as a function of temperature, done on 400 bar O2 deposited film further confirmed its room temperature ferromagnetic behaviour (RTF).
Document Type: Research Article
Publication date: 2010-08-01