International Journal of Materials and Product Technology

Use of an axial magnetic field to suppress convection in the solvent of Ge<SUB align=right>0.98Si<SUB align=right>0.02 grown by the travelling solvent method
pp. 2-19(18)
Authors: Abidi, L.; Saghir, M.Z.; Labrie, D.

A numerical study of the buoyancy convection occurring during the formation of InGaSb solution in a GaSb/InSb/GaSb sandwich system
pp. 20-34(15)
Authors: Arafune, K.; Murakami, N.; Kimura, T.; Kumagawa, M.; Hayakawa, Y.; Ozawa, T.; Okano, Y.; Dost, S.

Heating flux effects on floating zone growth under micro-gravity conditions
pp. 35-49(15)
Authors: Bennacer, R.; Ganaoui, M. El; Semma, E.; Cheddadi, A.

Epitaxial lateral overgrowth of semiconductor structures by liquid phase epitaxy
pp. 50-63(14)
Authors: Dobosz, D.; Zytkiewicz, Z.R.

Dislocation-free CZ-Si crystal growth without the thin Dash-neck
pp. 64-83(20)
Authors: Huang, Xinming; Taishi, Toshinori; Hoshikawa, Keigo

Heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system with transverse magnetic fields
pp. 84-94(11)
Authors: Kakimoto, Koichi; Shinozaki, Takashige; Hashimoto, Yoshio

Improvement of compositional homogeneity in In<SUB align=right>1-xGa<SUB align=right>xAs bulk crystals grown by the travelling liquidus-zone method
pp. 95-104(10)
Authors: Kinoshita, K.; Ogata, Y.; Koshikawa, N.; Adachi, S.; Yoda, S.; Iwai, M.; Tsuru, T.; Muramatsu, Y.

Homogeneity of Ge<SUB align=right>1-xSi<SUB align=right>x alloys (x&#8804;0.30) grown by the travelling solvent method
pp. 105-121(17)
Authors: Labrie, D.; George, A.E.; Jamieson, M.; Obruchkov, S.; Healey, J.P.; Paton, B.E.; Saghir, M.Z.

Unsteadiness and control by using thermal boundary modulation in restricted fluid domain of vertical Bridgman apparatus
pp. 122-134(13)
Authors: Semma, E.; Ganaoui, M. El; Timchenko, V.; Leonardi, E.

Three-dimensional modelling of Ge<SUB align=right>1-xSi<SUB align=right>x by the travelling solvent method in the presence of coriolis and centrifugal forces
pp. 135-150(16)
Authors: Makriyannis, T.J.; Saghir, M.Z.; Labrie, D.

A three-dimensional numerical study of Marangoni convection in a floating full zone
pp. 151-171(21)
Authors: Minakuchi, Hisashi; Okano, Yasunori; Dost, Sadik

An experimental study for the role of natural convection in the dissolution of GaSb into InSb melt, and the growth of In<SUB align=right>xGa<SUB align=right>1-xSb crystals
pp. 172-184(13)
Authors: Murakami, N.; Arafune, K.; Koyama, T.; Momose, Y.; Kumagawa, M.; Hayakawa, Y.; Ozawa, T.; Okano, Y.; Dost, S.

Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams
pp. 185-212(28)
Authors: Nakajima, Kazuo; Azuma, Yukinaga; Usami, Noritaka; Sazaki, Gen; Ujihara, Toru; Fujiwara, Kozo; Shishido, Toetsu; Nishijima, Yoshito; Kusunoki, Toshihiro

On some basic considerations of solid/liquid transition models under a microgravity environment
pp. 213-225(13)
Authors: Prud'homme, R.; Ganaoui, M. El

Growth of AlN, GaN and InN from the solution
pp. 226-261(36)
Authors: Krukowski, S.; Grzegory, I.; Bockowski, M.; Lucznik, B.; Suski, T.; Nowak, G.; Borysiuk, J.; Wroblewski, M.; Leszczynski, M.; Perlin, P.; Porowski, S.; Weyher, J.L.