Publisher: Elsevier

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Volume 16, Number 3, March 2003

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IFC: Editorial Board
pp. CO2-CO2(1)

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Editorial
pp. v-vi(2)

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Contents
pp. vii

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Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals
pp. 297-308(12)
Authors: Dal Negro, L.; Cazzanelli, M.; Daldosso, N.; Gaburro, Z.; Pavesi, L.; Priolo, F.; Pacifici, D.; Franzo, G.; Iacona, F.

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Electroluminescence from Si/SiGe quantum cascade emitters
pp. 309-314(6)
Authors: Paul, D.J.; Lynch, S.A.; Bates, R.; Ikonic, Z.; Kelsall, R.W.; Harrison, P.; Norris, D.J.; Liew, S.L.; Cullis, A.G.; Murzyn, P.; Pidgeon, C.; Arnone, D.D.; Robbins, D.J.

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Strain compensated Si/SiGe quantum well and quantum cascade on Si0.5Ge0.5 pseudosubstrate
pp. 315-320(6)
Authors: Diehl, L.; Mentese, S.; Muller, E.; Grutzmacher, D.; Sigg, H.; Fromherz, T.; Faist, J.; Gennser, U.; Campidelli, Y.; Kermarrec, O.; Bensahel, D.

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X-ray absorption study of light emitting silicon nanocrystals
pp. 321-325(5)
Authors: Daldosso, N.; Dalba, G.; Grisenti, R.; Dal Negro, L.; Pavesi, L.; Rocca, F.; Priolo, F.; Franzo, G.; Pacifici, D.; Iacona, F.

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Optical properties of silicon nanocrystal LEDs
pp. 326-330(5)
Authors: de La Torre, J.; Souifi, A.; Poncet, A.; Busseret, C.; Lemiti, M.; Bremond, G.; Guillot, G.; Gonzalez, O.; Garrido, B.; Morante, J.R.; Bonafos, C.

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Erbium-doped Si nanocrystals: optical properties and electroluminescent devices
pp. 331-340(10)
Authors: Pacifici, D.; Irrera, A.; Franzo, G.; Miritello, M.; Iacona, F.; Priolo, F.

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Er emission from Er-doped Si-rich silicon oxide layers synthesised by hydrogen reactive magnetron co-sputtering
pp. 341-346(6)
Authors: Gourbilleau, F.; Choppinet, P.; Dufour, C.; Levalois, M.; Madelon, R.; Sada, C.; Battaglin, G.; Rizk, R.

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Luminescence enhancement by hydrogenation of Si:Er,O
pp. 347-350(4)
Authors: Kocher-Oberlehner, G.; Jantsch, W.; Palmetshofer, L.; Ulyashin, A.

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High-efficiency silicon light emitting diodes
pp. 351-358(8)
Authors: Green, M.A.; Zhao, J.; Wang, A.; Trupke, T.

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Electroluminescence study on electron hole plasma in strained SiGe epitaxial layers
pp. 359-365(7)
Authors: Stoica, T.; Vescan, L.; Muck, A.; Hollander, B.; Schope, G.

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Electroluminescence from thin SiO2 layers after Si- and C-coimplantation
pp. 366-369(4)
Authors: Gebel, T.; Rebohle, L.; Sun, J.; Skorupa, W.

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A pulsed synthesis of -FeSi2 layers on silicon implanted with Fe+ ions
pp. 370-375(6)
Authors: Terukov, E.I.; Kudoyarova, V.K.; Batalov, R.I.; Bayazitov, R.M.

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Efficient silicon light emitting diodes made by dislocation engineering
pp. 376-381(6)
Authors: Lourenco, M.A.; Siddiqui, M.S.A.; Gwilliam, R.M.; Shao, G.; Homewood, K.P.

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Electroluminescence properties of light emitting devices based on silicon nanocrystals
pp. 395-399(5)
Authors: Irrera, A.; Pacifici, D.; Miritello, M.; Franzo, G.; Priolo, F.; Iacona, F.; Sanfilippo, D.; Di Stefano, G.; Fallica, P.G.

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Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization
pp. 400-403(4)
Authors: Young Kim, D.; Sim Jung, J.; Rae Jang, Y.; Ho Yoo, K.; Jang, J.

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The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation
pp. 410-413(4)
Authors: Tetelbaum, D.I.; Trushin, S.A.; Mikhaylov, A.N.; Vasil'ev, V.K.; Kachurin, G.A.; Yanovskaya, S.G.; Gaponova, D.M.

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Interrelation between microstructure and optical properties of erbium-doped nanocrystalline thin films
pp. 414-419(6)
Authors: Losurdo, M.; Cerqueira, M.F.; Alves, E.; Stepikhova, M.V.; Giangregorio, M.M.; Bruno, G.

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Studies of silicon nanocrystals in phosphorus rich SiO2 matrices
pp. 420-423(4)
Authors: Svrcek, V.; Slaoui, A.; Muller, J.; Rehspringer, J.; Honerlage, B.; Tomasiunas, R.; Pelant, I.

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Enhancement of the emission yield of silicon nanocrystals in silica due to surface passivation
pp. 424-428(5)
Authors: Pellegrino, P.; Garrido, B.; Garca, C.; Ferre, R.; Moreno, J.A.; Morante, J.R.

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Absorption cross-sections and lifetimes as a function of size in Si nanocrystals embedded in SiO2
pp. 429-433(5)
Authors: Garcia, C.; Garrido, B.; Pellegrino, P.; Ferre, R.; Moreno, J.A.; Pavesi, L.; Cazzanelli, M.; Morante, J.R.

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Effect of swift heavy ions on the photoluminescence properties of Si/SiO2 multilayers
pp. 434-438(5)
Authors: Gourbilleau, F.; Ternon, C.; Portier, X.; Marie, P.; Levalois, M.; Rizk, R.; Dufour, C.

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Anneal temperature dependence of Si/SiO2 superlattices photoluminescence
pp. 439-444(6)
Authors: Portier, X.; Ternon, C.; Gourbilleau, F.; Dufour, C.; Rizk, R.

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Electromodulation of the interband and intraband absorption of Ge/Si self-assembled islands
pp. 450-454(5)
Authors: Elkurdi, M.; Boucaud, P.; Sauvage, S.; Fishman, G.; Kermarrec, O.; Campidelli, Y.; Bensahel, D.; Saint-Girons, G.; Patriarche, G.; Sagnes, I.

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Monte Carlo analysis of electron heating in Si/SiO2 superlattices
pp. 455-460(6)
Authors: Rosini, M.; Jacoboni, C.; Ossicini, S.

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Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices
pp. 461-466(6)
Authors: Modreanu, M.; Gartner, M.; Aperathitis, E.; Tomozeiu, N.; Androulidaki, M.; Cristea, D.; Hurley, P.

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Photoluminescence of Ge(Si)/Si(001) self-assembled islands in the near infra-red wavelength range
pp. 467-472(6)
Authors: Novikov, A.V.; Lobanov, D.N.; Yablonsky, A.N.; Drozdov, Y.N.; Vostokov, N.V.; Krasilnik, Z.F.

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Effect of lower growth temperature on C incorporation in GeC epilayers on Si(001) grown by MBE
pp. 473-475(3)
Authors: Okinaka, M.; Hamana, Y.; Tokuda, T.; Ohta, J.; Nunoshita, M.

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Luminescence study of Si/Ge quantum dots
pp. 476-480(5)
Authors: Larsson, M.; Elfving, A.; Holtz, P.; Hansson, G.V.; Ni, W.

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Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD
pp. 481-488(8)
Authors: Palfinger, G.; Bitnar, B.; Sigg, H.; Muller, E.; Stutz, S.; Grutzmacher, D.

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Reverse biased porous silicon light-emitting diodes for optical intra-chip interconnects
pp. 495-498(4)
Authors: Lazarouk, S.K.; Jaguiro, P.V.; Leshok, A.A.; Borisenko, V.E.

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Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters
pp. 499-504(6)
Authors: Gebel, T.; Rebohle, L.; Sun, J.; Skorupa, W.; Nazarov, A.N.; Osiyuk, I.

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Ion-beam irradiation effect on solid-phase growth of -FeSi2
pp. 505-508(4)
Authors: Murakami, Y.; Kido, H.; Kenjo, A.; Sadoh, T.; Yoshitake, T.; Miyao, M.

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Structure and optoelectronic properties of Si/O superlattice
pp. 509-516(8)
Authors: Dovidenko, K.; Lofgren, J.C.; de Freitas, F.; Seo, Y.J.; Tsu, R.

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Si/SiO2 multilayers: synthesis by reactive magnetron sputtering and photoluminescence emission
pp. 517-522(6)
Authors: Ternon, C.; Gourbilleau, F.; Rizk, R.; Dufour, C.

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Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islands
pp. 523-527(5)
Authors: El Kurdi, M.; Boucaud, P.; Sauvage, S.; Fishman, G.; Kermarrec, O.; Campidelli, Y.; Bensahel, D.; Saint-Girons, G.; Patriarche, G.; Sagnes, I.

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SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3-1.55m
pp. 528-532(5)
Authors: Elfving, A.; Hansson, G.V.; Ni, W.

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Radiation damage in Si photodiodes by high-temperature irradiation
pp. 533-538(6)
Authors: Ohyama, H.; Simoen, E.; Claeys, C.; Takakura, K.; Matsuoka, H.; Jono, T.; Uemura, J.; Kishikawa, T.

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a-Si:H based two-dimensional photonic crystals
pp. 539-543(5)
Authors: Bennici, E.; Ferrero, S.; Giorgis, F.; Pirri, C.F.; Rizzoli, R.; Schina, P.; Businaro, L.; Di Fabrizio, E.

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Magneto-optical study of Er+3-related center in selectively doped Si:Er
pp. 544-546(3)
Authors: Vinh, N.Q.; Przybylinska, H.; Krasil'nik, Z.F.; Gregorkiewicz, T.

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Si-based materials and devices for light emission in silicon
pp. 547-553(7)
Authors: Castagna, M.E.; Coffa, S.; Monaco, M.; Caristia, L.; Messina, A.; Mangano, R.; Bongiorno, C.

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Si1-xGex/Si multi-quantum well phototransistor for near-infrared operation
pp. 554-557(4)
Authors: Pei, Z.; Lai, L.S.; Hwang, H.P.; Tseng, Y.T.; Liang, C.S.; Tsai, M.

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Modeling of magnetically controlled Si-based optoelectronic devices
pp. 558-562(5)
Authors: Dugaev, V.K.; Vygranenko, Y.; Vieira, M.; Litvinov, V.I.; Barnas, J.

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Non-pixeled amorphous silicon-based image sensors
pp. 563-567(5)
Authors: Fernandes, M.; Vygranenko, Y.; Louro, P.; Vieira, M.

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Imprint lithography of pyramidal photonic pillars using hydrazine etching
pp. 568-573(6)
Authors: Grigaliunas, V.; Tamulevicius, S.; Niaura, G.; Kopustinskas, V.; Gudonyte, A.; Jucius, D.

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Buffer layer influence on guiding properties of oxidized porous silicon waveguides
pp. 574-579(6)
Authors: Balucani, M.; Bondarenko, V.; Vorozov, N.; Ferrari, A.

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Larger absolute photonic band gap in two-dimensional air-silicon structures
pp. 580-585(6)
Authors: Marsal, L.F.; Trifonov, T.; Rodrguez, A.; Pallares, J.; Alcubilla, R.

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Technological aspects of oxidated porous silicon waveguides
pp. 586-590(5)
Authors: Balucani, M.; Bondarenko, V.; Vorozov, N.; Ferrari, A.

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New insights on amorphous silicon-nitride microcavities
pp. 591-595(5)
Authors: Ballarini, V.; Barucca, G.; Bennici, E.; Pirri, C.F.; Ricciardi, C.; Tresso, E.; Giorgis, F.

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Self-assembled Ge-islands for photovoltaic applications
pp. 596-601(6)
Authors: Konle, J.; Presting, H.; Kibbel, H.

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Shape transformation of Ge quantum dots due to Si overgrowth
pp. 602-608(7)
Authors: Kirfel, O.; Muller, E.; Grutzmacher, D.; Kern, K.

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Intraband photoresponse of SiGe quantum dot/quantum well multilayers
pp. 609-613(5)
Authors: Bougeard, D.; Brunner, K.; Abstreiter, G.

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A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics
pp. 614-619(6)
Authors: Masini, G.; Cencelli, V.; Colace, L.; DeNotaristefani, F.; Assanto, G.

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Optical interconnects for future high performance integrated circuits
pp. 620-627(8)
Authors: Kapur, P.; Saraswat, K.C.

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Subject Index
pp. 637-639(3)

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