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The atomic structure of Σ=33{144}<011> (θ=20.05o) tilt grain boundary in germanium

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Keywords: Grain boundary; Interfaces; Semiconductors; Transmission electron microscopy

Document Type: Research Article

DOI: http://dx.doi.org/10.1016/S1359-6462(01)01144-7

Affiliations: Laboratoire TECSEN, UMR 6122--CNRS, Faculte des Sciences et Techniques de St. Jerome, F-13397 , Cedex 20, Marseille, France

Publication date: November 19, 2001

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