Multiscale simulations of silicon nanoindentation

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Keywords: Electrical properties (electronic conductivity); Indentation; Mechanical properties (constitutive equations); Semiconductors; Theory &; modeling

Document Type: Research Article

DOI: http://dx.doi.org/10.1016/S1359-6454(01)00267-1

Affiliations: Department of Physics and Division of Engineering and Applied Sciences, Harvard University, Oxford Street, 02138, Cambridge, MA, USA

Publication date: November 14, 2001

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