Publisher: Elsevier

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Volume 11, Number 2, April 1998

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Atomistic simulation of ion implantation into 2D structures
pp. 87-95(9)
Authors: Schmidt, B.; Posselt, M.; Strecker, N.; Feudel, T.

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Diffusion in semiconductors
pp. 96-100(5)
Authors: Gillin, W.P.; Dunstan, D.J.

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Experimental studies of the initial diffusion stage in semiconductors
pp. 101-104(4)
Authors: Kamanin, A.V.; Busygina, L.A.; Guk, E.G.; Kudryavtsev, Y.A.; Mokina, I.A.; Shmidt, N.M.; Shuman, V.B.; Yurre, T.A.

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A parallel multigrid solver applied to the simulation of thermal oxidation and diffusion processes
pp. 105-108(4)
Authors: Hackenberg, M.G.; Joppich, W.; Sontowski, T.; Mijalkovic, S.

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Calibration of polycrystalline silicon deposition and etching machine inside a technological simulator
pp. 109-112(4)
Authors: Gaillard, T.; Lhermite, H.; Bonnaud, O.; Kis-Sion, K.

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Transport through semiconductor quantum systems in the R-matrix formalism
pp. 117-121(5)
Authors: Wulf, U.; Kucera, J.; Sigmund, E.

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Density functionals from LDA to GGA
pp. 122-127(6)
Authors: Ziesche, P.; Kurth, S.; Perdew, J.P.

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Boron in ab initio calculations
pp. 132-137(6)
Authors: Boustani, I.; Quandt, A.

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Cluster simulation of Si and Al deposited layers on Si(100)-2x1 surface
pp. 138-143(6)
Authors: Zavodinsky, V.G.; Kuyanov, I.A.

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