High-preformance diamond surface-channel field-effect transistors and their operation mechanism

Authors: Tsugawa K.; Kitatani K.; Noda H.; Hokazono A.; Hirose K.; Tajima M.; Kawarada H.

Source: Diamond and Related Materials, Volume 8, Number 2, March 1999 , pp. 927-933(7)

Publisher: Elsevier

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Keywords: Diamond; Hydrogen-terminated surface; MESFET; MOSFET; p-Type surface conductive layer

Language: English

Document Type: Research article

DOI: http://dx.doi.org/10.1016/S0925-9635(98)00449-X

Affiliations: 1: Core Research for Evolutional Science and Technology CREST, Japan Science and Technology Corporation (JST), c/o Department of Electronics, Information and Communication Engineering, School of Science and Engineering, Waseda University, 3-4-1 Ohkub

Publication date: 1999-03-01