Diamond and Related Materials

Mechanism of diamond nucleation enhancement by electron emission via hot filament chemical vapor deposition
pp. 123-126(4)
Authors: Hiltmann K.; Keller W.; Lang W.; Wang W.L.; Liao K.J.; Wang J.; Fang L.; Ding P.D.; Esteve J.; Polo M.C.; Sanchez G.

A new method for nucleation enhancement of diamond
pp. 127-131(5)
Authors: Avigal Y.; Hoffman A.

Influence of substrate nature on the d.c.-glow discharge induced nucleation of diamond
pp. 132-138(7)
Authors: Cattan E.; Haccart T.; Velu G.; Remiens D.; Bergaud C.; Nicu L.; Gouzman I.; Shima-Edelstein R.; Comtet G.; Hellner L.; Dujardin G.; Roter S.; Hoffman A.

Surface carbon saturation as a means of CVD diamond nucleation enhancement
pp. 139-145(7)
Authors: Papautsky I.; Brazzle J.; Ameel T.; Frazier A.B.; Shima Edelstein R.; Gouzman I.; Folman M.; Hoffman A.; Rotter S.

Nano-particles seeding and its characterization by X-ray photoelectron spectroscopy (XPS)
pp. 146-149(4)
Authors: Eliyahu A.; Buehler J.; Ben-Chorin M.; Cohen H.; Prior Y.

Three-dimensional diamond growth film simulations: correlations between nucleation and surface parameters
pp. 150-154(5)
Authors: Eickhoff M.; Moller H.; Kroetz G.; v. Berg J.; Ziermann R.; Barrat S.; Guillemot G.; Patte L.; Bauer-Grosse E.

Early stages of carbon film growth: carbide interface formation on molybdenum
pp. 155-159(5)
Authors: Reinke P.; Oelhafen P.

Effect of oxygen on the bias-enhanced nucleation of diamond on silicon
pp. 160-165(6)
Authors: Becker T.; Tomasi L.; Bosch-v.Braunmuhl C.; Muller G.; Sberveglieri G.; Fagli G.; Comini E.; Schreck M.; Thurer K.H.; Christensen C.; Muller M.; Stritzker B.

In situ measurements of methane and acetylene concentrations in a CVD reactor by infrared spectroscopy
pp. 166-170(5)
Authors: Kruusing A.; Leppavuori S.; Uusimaki A.; Petretis B.; Makarova O.; Morell G.; Canales E.; Weiner B.R.

Comparison of P, N and B additions during CVD diamond deposition
pp. 171-178(8)
Authors: Sato K.; Shikida M.; Yamashiro T.; Tsunekawa M.; Ito S.; Haubner R.; Bohr S.; Lux B.

High quality textured growth of oriented diamond thin films on Si (100) in a hot filament-CVD system
pp. 179-184(6)
Authors: Lutwyche M.; Andreoli C.; Binnig G.; Brugger J.; Drechsler U.; Haberle W.; Rohrer H.; Rothuizen H.; Vettiger P.; Yaralioglu G.; Quate C.; Janischowsky K.; Stammler M.; Ley L.

Study of diamond films grown at low temperatures and pressures by ECR-assisted CVD
pp. 185-188(4)
Authors: Ohji H.; Trimp P.J.; French P.J.; Gupta S.; Morell G.; Katiyar R.S.; Gilbert D.R.; Singh R.K.

Quality of diamond wafers grown by microwave plasma CVD: effects of gas flow rate
pp. 189-193(5)
Authors: Ralchenko V.; Sychov I.; Vlasov I.; Vlasov A.; Konov V.; Khomich A.; Voronina S.

Characterization of ballas diamond depositions
pp. 194-201(8)
Authors: Li W.J.; Mai J.D.; Ho C.-M.; Buhlmann S.; Blank E.; Haubner R.; Lux B.

Investigation of plasma jet gas-dynamic effect on a substrate in conditions of diamond coating synthesis
pp. 202-206(5)
Authors: Temple-Boyer P.; Hajji B.; Alay J.L.; Morante J.R.; Martinez A.; Vasil'ev V.V.; Strel'nitskij V.E.

Effects of the pretreatment of a cemented carbide surface on its properties and on the properties of diamond coatings deposited by oxygen-acetylene flame CVD
pp. 207-210(4)
Authors: Latorre L.; Nouet P.; Bertrand Y.; Hazard P.; Pressecq F.; Stankovic S.; Rakocevic Z.; Marinkovic S.

Input power dependence of growth rate and quality of diamond films deposited in a d.c. arcjet system
pp. 211-214(4)
Authors: Renault O.; Briand D.; Delabouglise G.; Currie J.F.; Labeau M.; Tang W.Z.; Zhong G.F.; Shen F.Z.; Lu F.X.

The role of nitrogen in the deposition of polycrystalline diamond films
pp. 215-219(5)
Authors: Bayliss S.C.; Buckberry L.D.; Fletcher I.; Tobin M.J.; Zhang Q.; Yoon S.F.; Ahn J.; Rusli E.; Guo Y.-P.; Wee A.T.S.; Huan A.C.H.

The effect of nitrogen on the growth, morphology, and crystalline quality of MPACVD diamond films
pp. 220-225(6)
Authors: Asmussen J.; Mossbrucker J.; Khatami S.; Huang W.S.; Wright B.; Ayres V.

Molecular beam mass spectrometry studies of nitrogen additions to the gas phase during microwave-plasma-assisted chemical vapour deposition of diamond
pp. 226-230(5)
Authors: Urban G.; Leeds S.M.; May P.W.; Ashfold M.N.R.; Rosser K.N.

Using fluorine and chlorine in the diamond CVD process
pp. 231-235(5)
Authors: Schmidt I.; Benndorf C.

Optical-quality diamond growth from CO₂-containing gas chemistries
pp. 236-241(6)
Authors: Thornell G.; Spohr R.; van Veldhuizen E.J.; Hjort K.; Mollart T.P.; Lewis K.L.

Modelling of the gas phase chemistry during diamond CVD: the role of different hydrocarbon species
pp. 242-245(4)
Authors: Lee S.-W.; Tai Y.-C.; Tsang R.S.; May P.W.; Ashfold M.N.R.

Diamond deposition on Ni₃Ge single- and polycrystalline substrates
pp. 246-250(5)
Authors: Serre C.; Romano-Rodrguez A.; Perez-Rodrguez A.; Morante J.R.; Fonseca L.; Acero M.C.; Kogler R.; Skorupa W.; Haubner R.; Lux B.; Gruber U.; Schuster J.C.

Variations of morphology and electrical property of diamond with doping using diborane in a methane-hydrogen gas mixture
pp. 251-256(6)
Authors: Lee B.-J.; Ahn B.-T.; Baik Y.-J.

Pulsed laser surface modifications of diamond thin films
pp. 257-261(5)
Authors: Cappelli E.; Mattei G.; Orlando S.; Pinzari F.; Ascarelli P.

The preparation of high quality oriented diamond thin films via low temperature and hydrogen ion etched nucleation
pp. 262-266(5)
Authors: Gu C.; Jiang X.; Jin Z.

Diamonds of new alkaline carbonate-graphite HP syntheses: SEM morphology, CCL-SEM and CL spectroscopy studies
pp. 267-272(6)
Authors: Koch M.; Schabmueller C.G.J.; Evans A.G.R.; Brunnschweiler A.; Litvin Y.A.; Chudinovskikh L.T.; Saparin G.V.; Obyden S.K.; Chukichev M.V.; Vavilov V.S.

Microscopic measurements of the electrical properties of highly oriented B-doped diamond films: influence of grain boundaries
pp. 273-277(5)
Authors: Oliver A.D.; Wise K.D.; Steinbach D.; Floter A.; Guttler H.; Zachai R.; Ziemann P.

Evidence of hydrogen-boron interactions in diamond from deuterium diffusion and infrared spectroscopy experiments
pp. 278-282(5)
Authors: Hynes A.M.; Ashraf H.; Bhardwaj J.K.; Hopkins J.; Johnston I.; Shepherd J.N.; Chevallier J.; Lusson A.; Theys B.; Deneuville A.; Gheeraert E.

Diamond tips and cantilevers for the characterization of semiconductor devices
pp. 283-287(5)
Authors: Malave A.; Oesterschulze E.; Kulisch W.; Trenkler T.; Hantschel T.; Vandervorst W.

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and Al_xGa_1-xN
pp. 288-294(7)
Authors: Craciun F.; Verardi P.; Dinescu M.; Galassi C.; Costa A.; Hanser A.D.; Nam O.-H.; Bremser M.D.; Thomson D.B.; Gehrke T.; Zheleva T.S.; Davis R.F.

Status of SiC power devices at Northrop Grumman
pp. 295-301(7)
Authors: Litovchenko V.G.; Gorbanyuk T.I.; Efremov A.A.; Evtukh A.A.; Schipanski D.; Agarwal A.K.; Seshadri S.; Casady J.B.; Mani S.S.; MacMillan M.F.; Saks N.; Burk A.A.; Augustine G.; Balakrishna V.; Sanger P.A.; Brandt C.D.; Rodrigues R.

Growth of GaN on highly mismatched substrate and its application to novel devices
pp. 302-304(3)
Authors: Schimkat J.; Amano H.; Iwaya M.; Katsuragawa M.; Takeuchi T.; Kato H.; Akasaki I.

Electrical characterisation of MNOS devices on p-type 6H-SiC
pp. 305-308(4)
Authors: Schroth A.; Lee C.; Matsumoto S.; Maeda R.; Berberich S.; Godignon P.; Millan J.; Planson D.; Hartnagel H.L.; Senes A.

Fabrication of aluminium nitride/diamond and gallium nitride/diamond SAW devices
pp. 309-313(5)
Authors: Petroz K.; Ollier E.; Grateau H.; Mottier P.; Chalker P.R.; Joyce T.B.; Johnston C.; Crossley J.A.A.; Huddlestone J.; Whitfield M.D.; Jackman R.B.

Inversion domains generated at substrate steps in GaN/(0001) Al₂O₃ layers
pp. 314-318(5)
Authors: Zhu X.; Zhu J.; Zhou S.; Li Q.; Liu Z.; Barbaray B.; Potin V.; Ruterana P.; Nouet G.

Investigation of the chemical reactivity and stability of c-BN^P
pp. 319-324(6)
Authors: Falipou S.; Chovelon J.M.; Martelet C.; Margonari J.; Cathignol D.; Sachdev H.; Strausz M.

Microstructure of c-BN thin films deposited on diamond films
pp. 325-330(6)
Authors: Pascallon J.; Stambouli V.; Ilias S.; Bouchier D.; Nouet G.; Silva F.; Gicquel A.

3C SiC(001) surface structure studied by angular resolved photoelectron spectroscopy and reflectance anisotropy spectroscopy
pp. 331-334(4)
Authors: Lubbe M.; Lindner K.; Rossow U.; Zahn D.R.T.

Mapping of 6H-SiC for implantation control
pp. 335-340(6)
Authors: Morvan E.; Godignon P.; Montserrat J.; Flores D.; Jorda X.; Vellvehi M.

Temperature behavior of the 6H-SiC pn diodes
pp. 341-345(5)
Authors: Badila M.; Chante J.P.; Locatelli M.L.; Millan J.; Godignon P.; Brezeanu G.; Tudor B.; Lebedev A.

Structural and compositional characterization of 6H-SiC implanted with N⁺ and Al⁺ ions using optical methods
pp. 346-351(6)
Authors: Berner A.; Mundim K.C.; Ellis D.E.; Dorfman S.; Fuks D.; Evenhaim R.; Pezoldt J.; Yankov R.A.; Werninghaus T.; Zahn D.R.T.; Fukarek W.; Teichert G.; Luebbe M.; Skorupa W.

Reaction of palladium thin films with an Si-rich 6H-SiC(0001)(3x3) surface
pp. 352-356(5)
Authors: Veuillen J.Y.; Nguyen Tan T.A.; Tsiaoussis I.; Frangis N.; Brunel M.; Gunnella R.

Confocal micro-Raman scattering and Rutherford backscattering characterization of lattice damage in aluminum implanted 6H-SiC
pp. 357-360(4)
Authors: Campos F.J.; Mestres N.; Alsina F.; Pascual J.; Morvan E.; Godignon P.; Millan J.

Abrupt irreversible transformation of rhombohedral BN to a dense form in uniaxial compression of CVD material
pp. 361-363(3)
Authors: Novikov N.V.; Petrusha I.A.; Shvedov L.K.; Polotnyak S.B.; Dub S.N.; Shevchenko S.A.

High nucleation rate in pure SiC nanometric powder by a combination of room temperature plasmas and post-thermal treatments
pp. 364-368(5)
Authors: Majjad H.; Basrour S.; Delobelle P.; Schmidt M.; Viera G.; Costa J.; Roura P.; Bertran E.

Application of aluminum nitride films for electronic devices
pp. 369-372(4)
Authors: Belyanin A.F.; Bouilov L.L.; Zhirnov V.V.; Kamenev A.I.; Kovalskij K.A.; Spitsyn B.V.

Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100)
pp. 373-376(4)
Authors: Chalker P.R.; Joyce T.B.; Farrell T.

Microstructure and mechanical properties of pulsed laser deposited boron nitride films
pp. 377-381(5)
Authors: Weissmantel S.; Reisse G.; Keiper B.; Schulze S.

Synthesis of adhesive c-BN films in pure nitrogen radio-frequency plasma
pp. 382-385(4)
Authors: Yap Y.K.; Aoyama T.; Kida S.; Mori Y.; Sasaki T.

Effects of titanium and aluminum incorporations on the structure of boron nitride thin films
pp. 386-390(5)
Authors: Seguin J.-L.; Bendahan M.; Isalgue A.; Esteve-Cano V.; Carchano H.; Torra V.; Kolitsch A.; Wang X.; Manova D.; Fukarek W.; Moller W.; Oswald S.

Electronic properties of nanocrystalline BN and AlN films deposited on Si and GaAs-a comparison
pp. 391-397(7)
Authors: Szmidt J.; Sokolowska A.; Olszyna A.; Werbowy A.; Pawlowski P.

Infrared and Raman analysis of plasma CVD boron nitride thin films
pp. 398-401(4)
Authors: Ben el Mekki M.; Mestres N.; Pascual J.; Polo M.C.; Andujar J.L.

Boron carbide thin films deposited by tuned-substrate RF magnetron sputtering
pp. 402-405(4)
Authors: Pascual E.; Martnez E.; Esteve J.; Lousa A.

Non-stoichiometry of composition and dissolution of oxygen in the cubic boron nitride crystal lattice
pp. 406-409(4)
Author: Bezhenar M.

A comparative study of composition, structure and elastic properties of boron nitride films deposited by magnetron and ion beam sputtering
pp. 410-414(5)
Authors: Logothetidis S.; Charitidis C.; Patsalas P.; Kehagias T.

Nucleation of c-BN on various substrate materials under high-pressure-high-temperature conditions
pp. 415-422(8)
Authors: Lux B.; Kalss W.; Haubner R.; Taniguchi T.

Micromechanical properties of BN and B-C-N coatings obtained by r.f. plasma-assisted CVD
pp. 423-427(5)
Authors: Polo M.C.; Martnez E.; Esteve J.; Andujar J.L.

Diamond-like carbon: state of the art
pp. 428-434(7)
Authors: Park K.-Y.; Lee C.-W.; Jang H.-S.; Oh Y.; Ha B.; Grill A.

Electronic and topographic structure of ta-C, ta-C:N and ta-C:B investigated by scanning tunnelling microscopy
pp. 435-439(5)
Authors: Sherman F.; Tung S.; Kim C.-J.; Ho C.-M.; Woo J.; Arena C.; Kleinsorge B.; Robertson J.; Milne W.I.; Welland M.E.

Structural and electronic properties of highly photoconductive amorphous carbon nitride
pp. 440-445(6)
Authors: Iwasaki T.; Aono M.; Nitta S.; Habuchi H.; Itoh T.; Nonomura S.

Optical properties and new carbon forms of sputtered amorphous carbon films
pp. 446-450(5)
Authors: Gioti M.; Logothetidis S.

Ion implantation post-processing of amorphous carbon films
pp. 451-456(6)
Authors: Ager J.W.; Anders S.; Anders A.; Wei B.; Yao X.Y.; Brown I.G.; Bhatia C.S.; Komvopoulos K.

Haemocompatibility of DLC and TiC-TiN interlayers on titanium
pp. 457-462(6)
Authors: Jones M.I.; McColl I.R.; Grant D.M.; Parker K.G.; Parker T.L.

The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition
pp. 463-467(5)
Authors: Schweitz J.-A.; Ericson F.; Yoshitake T.; Nishiyama T.; Aoki H.; Suizu K.; Takahashi K.; Nagayama K.

A rectilinear plasma filtering system for vacuum-arc deposition of diamond-like carbon coatings
pp. 468-471(4)
Authors: Aksenov I.I.; Belous V.A.; Vasil'ev V.V.; Volkov Y.Y.; Strel'nitskij V.E.

Effect of nitrogen incorporation into diamond-like carbon films by ECR-CVD
pp. 472-476(5)
Authors: Ohji H.; French P.J.; Fung M.K.; Chan W.C.; Gao Z.Q.; Bello I.; Lee C.S.; Lee S.T.

Control of ion energy using a screen-grid in an electron cyclotron resonance chemical vapour deposition system
pp. 477-480(4)
Authors: Morrissey A.; Kelly G.; Alderman J.; Rusli E.; Yoon S.F.; Wu Y.S.; Yang H.; Ahn J.; Zhang Q.

Contribution of sp³ clusters in films and fibers obtained from camphor
pp. 481-484(4)
Authors: Rzepka E.; Lusson A.; Levy-Clement C.; Kumar M.; Mukhopadhyay K.; Sharon M.

Semiconducting carbon films from a natural source: camphor
pp. 485-489(5)
Authors: Sharon M.; Sundarakoteeswaran N.; Kichambare P.D.; Kumar M.; Ando Y.; Zhao X.

The kinetics of sputtered deposited carbon on silicon: a phenomenological model
pp. 490-494(5)
Authors: Galdikas A.; Logothetidis S.; Patsalas P.; Gioti M.; Pranevicius L.

The subimplantation model for diamond-like carbon films deposited by methane gas decomposition
pp. 495-499(5)
Authors: Manea E.; Muller R.; Popescu A.; Lacerda R.G.; Marques F.C.; Freire F.L.

Deposition of titanium oxide and titanium carbide containing thin carbon films in a plasma activated process
pp. 500-503(4)
Authors: Ferreira L.O.S.; Moehlecke S.; Stricker A.; Luithardt W.; Benndorf C.

Effects of post-deposition annealing on different DLC films
pp. 504-509(6)
Authors: Wachter R.; Cordery A.

Thermal annealing behaviour of alloyed DLC films on steel: Determination and modelling of mechanical properties
pp. 510-516(7)
Authors: Folkmer B.; Siber A.; Bley W.G.; Sandmaier H.; Lang W.; Michler J.; Tobler M.; Blank E.

Effect of Si on the electronic structure of sputter-deposited C films: an electron spectroscopy study
pp. 517-521(5)
Authors: Speranza G.; Laidani N.; Calliari L.; Anderle M.

Optical and electrical properties of a-C:H deposited by magnetic confinement of r.f. PECVD plasma
pp. 522-526(5)
Authors: Tomozeiu N.; Hart A.; Kleinsorge B.; Milne W.I.

A correlation between the microstructure and optical properties of hydrogenated amorphous carbon films prepared by RF magnetron sputtering
pp. 527-531(5)
Authors: Clin M.; Durand-Drouhin O.; Zeinert A.; Picot J.C.

Investigation of ultrathin DLC film growth by a novel X-ray reflectivity technique and in situ ellipsometry
pp. 532-537(6)
Authors: Kondrashov P.E.; Smirnov I.S.; Lukashov Y.E.; Yablokov S.Y.; Baranov A.M.; Dowling D.P.; Donnelly K.; Flood R.V.; McConnell M.L.

The effect of refractive index on the friction coefficient of DLC coated polymer substrates
pp. 538-540(3)
Authors: Sato K.; Shikida M.; Yamashiro T.; Asaumi K.; Iriye Y.; Yamamoto M.; Donnelly K.; Dowling D.P.; McConnell M.L.; Flood R.V.

Ultraviolet Raman characterisation of diamond-like carbon films
pp. 541-544(4)
Authors: Adamopoulos G.; Gilkes K.W.R.; Robertson J.; Conway N.M.J.; Kleinsorge B.Y.; Buckley A.; Batchelder D.N.

Optical observation of bonded and quasi-free hydrogen in diamond-like carbon
pp. 545-548(4)
Authors: Ivanov-Omskii V.I.; Korobkov M.P.; Namozov B.R.; Smorgonskaya E.A.; Yastrebov S.G.

Photoconductivity and recombination in diamond-like carbon
pp. 549-553(5)
Authors: Ilie A.; Robertson J.; Conway N.; Kleinsorge B.; Milne W.I.

Diamond-like two-phonon absorption in hydrogenated amorphous carbon modified with copper
pp. 554-557(4)
Authors: Bendahan M.; Aguir K.; Seguin J.-L.; Carchano H.; Ivanov-Omskii V.I.; Yastrebov S.G.

Nanoindentation and nanoscratching studies of amorphous carbon films
pp. 558-562(5)
Authors: Charitidis C.; Logothetidis S.; Douka P.

Substrate temperature effects on the microhardness and adhesion of diamond-like thin films
pp. 563-566(4)
Authors: Defay E.; Semmache B.; Dubois C.; LeBerre M.; Barbier D.; Martinez E.; Polo M.C.; Pascual E.; Esteve J.

Mechanical and tribological properties of diamond-like carbon coatings films deposited from an electron cyclotron resonance plasma
pp. 567-571(5)
Authors: Racine B.; Benlahsen M.; Zellama K.; Zarrabian M.; Villain J.P.; Turban G.

Etching process of hydrogenated amorphous carbon (a-C:H) thin films in a dual ECR-r.f. nitrogen plasma
pp. 572-576(5)
Authors: Hong J.; Turban G.

Laser approaches for deposition of carbon nitride films - chemical vapour deposition and ablation
pp. 577-581(5)
Authors: Popov C.; Jelinek M.; Ivanov B.; Tomov R.I.; Kulisch W.

Deposition of carbon nitride films by reactive pulsed-laser ablation at high fluences
pp. 582-585(4)
Authors: Zocco A.; Perrone A.; D'Anna E.; Leggieri G.; Luches A.; Klini A.; Zergioti I.; Fotakis C.

Studies on structural properties of a-CN:H films prepared in electron cyclotron resonance plasma
pp. 586-590(5)
Authors: Gosele U.; Tong Q.-Y.; Schumacher A.; Krauter G.; Reiche M.; Ploszl A.; Kopperschmidt P.; Lee T.-H.; Kim W.-J.; Bhattacharyya S.; Vallee C.; Cardinaud C.; Turban G.

XPS spectra of thin CN_x films prepared by chemical vapor deposition
pp. 591-594(4)
Authors: Yang X.; Yang J.M.; Tai Y.-C.; Ho C.-M.; Beshkov G.; Dimitrov D.B.; Georgiev S.; Juan-Cheng D.; Petrov P.; Velchev N.; Krastev V.

Properties of amorphous a-CH(:N) films synthesized by direct ion beam deposition and plasma-assisted chemical vapour deposition
pp. 595-600(6)
Authors: Lenardi C.; Baker M.A.; Briois V.; Nobili L.; Piseri P.; Gissler W.

CN_x film characterization by surface sensitive methods: XPS and XAES
pp. 601-604(4)
Authors: Dementjev A.P.; de Graaf A.; Dolgiy D.I.; Olshanski E.D.; Shulga Y.M.; Serov A.A.

Nano-carbon nitride synthesis from a bio-molecular target for ion beam sputtering at low temperature
pp. 605-609(5)
Authors: Wu J.-J.; Lu T.-R.; Wu C.-T.; Wang T.-Y.; Chen L.-C.; Chen K.-H.; Kuo C.-T.; Chen T.-M.; Yu Y.-C.; Wang C.-W.; Lin E.-K.

Nanocrystalline C-BN synthesized by mechanical alloying
pp. 610-613(4)
Authors: Zhang Y.F.; Tang Y.H.; Lee C.S.; Bello I.; Lee S.T.

Binding state transformation in high temperature synthesized CN thin films
pp. 614-617(4)
Authors: Yap Y.K.; Kida S.; Aoyama T.; Mori Y.; Sasaki T.

Ellipsometric study of carbon nitride thin films with and without silicon addition
pp. 618-622(5)
Authors: Chen L.C.; Lin H.Y.; Wong C.S.; Chen K.H.; Lin S.T.; Yu Y.C.; Wang C.W.; Lin E.K.; Ling K.C.

Amorphous nitrogen containing carbon films deposited by plasma assisted chemical vapour deposition
pp. 623-627(5)
Authors: Arora M.K.; Lettington A.H.; Waterman D.R.

Carbon and carbon nitride planar waveguides on silicon substrates
pp. 628-630(3)
Authors: Huttel I.; Gurovic J.; Cerny F.; Pospisil J.

Carbon nanostructures and diamond growth by HFCVD: role of the substrate preparation and synthesis conditions
pp. 631-635(5)
Authors: Bahnisch R.; Grosz W.; Staud J.; Menschig A.; Bonnot A.M.; Deldem M.; Beaugnon E.; Fournier T.; Schouler M.C.; Mermoux M.

Morphology and Raman spectra of diamond films grown with a plasma torch
pp. 636-639(4)
Authors: Artmann H.; Frey W.; Berthou H.; Faure C.; Hanni W.; Perret A.

Comparative study of band-A cathodoluminescence and Raman spectroscopy in CVD diamond films
pp. 640-644(5)
Authors: Trolier-McKinstry S.; Fox G.R.; Kholkin A.; Muller C.A.P.; Setter N.; Faggio G.; Marinelli M.; Messina G.; Milani E.; Paoletti A.; Santangelo S.; Tucciarone A.; Verona Rinati G.

Evaluation of biaxial stress in diamond films
pp. 645-650(6)
Authors: Hua Fan Q.; Fernandes A.; Pereira E.; Gracio J.

An investigation of structural defects in diamond films grown at low substrate temperatures
pp. 651-656(6)
Authors: Stiegler J.; Michler J.; Blank E.

Confocal Raman imaging for the analysis of CVD diamond films
pp. 657-662(6)
Authors: Geiger W.; Folkmer B.; Merz J.; Sandmaier H.; Lang W.; Haouni A.; Mermoux M.; Marcus B.; Abello L.; Lucazeau G.

3-D determination of the location and absolute amount of sp² and sp³ bound carbon and stress components in CVD diamond films using multi-color polarized Raman spectroscopy
pp. 663-667(5)
Authors: Mossbrucker J.; Asmussen J.

Raman spectroscopy and scanning electron microscopy investigation of annealed amorphous carbon-germanium films deposited by d.c. magnetron sputtering
pp. 668-672(5)
Authors: Angelucci R.; Poggi A.; Dori L.; Cardinali G.C.; Parisini A.; Tagliani A.; Mariasaldi M.; Cavani F.; Mariotto G.; Vinegoni C.; Jacobsohn L.G.; Freire F.L.

Back-scattering CARS diagnostics on CVD diamond
pp. 673-676(4)
Authors: Buhler J.; Prior Y.

Plasma chemistry of an expanding Ar/C₂H₂ plasma used for fast deposition of a-C:H
pp. 677-681(5)
Authors: Go J.S.; Cho Y.-H.; van de Sanden M.C.M.; van Hest M.F.A.M.; de Graaf A.; Smets A.H.M.; Letourneur K.G.Y.; Boogaarts M.G.H.; Schram D.C.

UHREM investigation of stacking fault interactions in the CVD diamond structure
pp. 682-687(6)
Authors: Hierold C.; Clasbrummel B.; Behrend D.; Scheiter T.; Steger M.; Oppermann K.; Kapels H.; Landgraf E.; Wenzel D.; Etzrodt D.; Delclos S.; Dorignac D.; Phillipp F.; Moulin S.; Bonnot A.M.

HREM study of ultra-thin, amorphous carbon films and structural changes of carbon forms to diamond under ion bombardment
pp. 688-692(5)
Authors: Komninou P.; Nouet G.; Kehagias T.; Logothetidis S.; Gioti M.; Karakostas T.

Reflection high-energy electron diffraction and low energy electron diffraction studies of the homoepitaxially grown diamond (111) and (001) surfaces
pp. 693-700(8)
Authors: Nishitani-Gamo M.; Sakaguchi I.; Ping Loh K.; Tomohide Takami; Kusunoki I.; Ando T.

RHEED and AFM studies of homoepitaxial diamond thin film on C(001) substrate produced by microwave plasma CVD
pp. 701-704(4)
Authors: Takami T.; Suzuki K.; Kusunoki I.; Sakaguchi I.; Nishitani-Gamo M.; Ando T.

A study of deuterium interaction with diamond (110) single crystal surface by TPD, EELS and LEED
pp. 705-711(7)
Authors: Obreja P.; Muller R.; Manea E.; Bobrov K.; Shechter H.; Folman M.; Hoffman A.

Cathodoluminescence of diamond films grown on pretreated Si (001) substrates by microwave plasma chemical vapour deposition
pp. 712-716(5)
Authors: Kim D.-G.; Seong T.-Y.; Baik Y.-J.; Stevens Kalceff M.A.; Phillips M.R.

Photoluminescence excitation and quenching spectra in CVD diamond films
pp. 717-720(4)
Authors: Iakoubovskii K.; Adriaenssens G.J.; Nesladek M.; Stals L.M.

Photoionization cross-section of dominant defects in CVD diamond
pp. 721-724(4)
Authors: Rosa J.; Vanecek M.; Nesladek M.; Stals L.M.

Surface quality and composition dependence of absolute quantum photoyield of CVD diamond films
pp. 725-731(7)
Authors: Laikhtman A.; Avigal Y.; Kalish R.; Breskin A.; Chechik R.; Shefer E.; Lifshitz Y.; Hoffman A.

Acoustic wave propagation in free standing CVD diamond: Influence of film quality and temperature
pp. 732-737(6)
Authors: Whitfield M.D.; Audic B.; Flannery C.M.; Kehoe L.P.; Crean G.M.; Jackman R.B.

High-resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis
pp. 738-742(5)
Authors: Nistor L.; Nistor S.; Dinca G.; Van Landuyt J.; Schoemaker D.; Copaciu V.; Georgeoni P.; Arnici N.

Electron emission and NEA from differently terminated, doped and oriented diamond surfaces
pp. 743-747(5)
Authors: Zeitschel A.; Friedberger A.; Welser W.; Muller G.; Diederich L.; Kuttel O.M.; Aebi P.; Schlapbach L.

Electron affinity and band bending of single crystal diamond (111) surface
pp. 748-753(6)
Authors: Simonin L.; Lougnot D.J.; Cui J.B.; Graupner R.; Ristein J.; Ley L.

Highly-efficient flat electron emitter of single-crystalline CVD diamond
pp. 754-758(5)
Authors: Nishimura M.; Ogawa K.; Hatta A.; Ito T.

Behavior of electron emission from phosphorus-doped epitaxial diamond films
pp. 759-762(4)
Authors: Ashruf C.M.A.; French P.J.; Bressers P.M.M.C.; Kelly J.J.; Kimura C.; Koizumi S.; Kamo M.; Sugino T.

Grain boundary field electron emission from CVD diamond films
pp. 763-767(5)
Authors: Kremer R.; Boudrioua A.; Loulergue J.C.; Karabutov A.V.; Frolov V.D.; Pimenov S.M.; Konov V.I.

Growth of nanocrystalline diamond films for low field electron emission
pp. 768-771(4)
Authors: Proffitt S.S.; Probert S.J.; D Whitfield M.; Foord J.S.; Jackman R.B.

Fabrication of nano-size conic diamond arrays by bias assisted PCVD
pp. 772-780(9)
Authors: Jan Y.-T.; Hsieh H.-C.; Chen C.-F.

Negative electron affinity of cubic boron nitride
pp. 781-784(4)
Authors: Loh K.P.; Sakaguchi I.; Nishitani-Gamo M.; Taniguchi T.; Ando T.

Synthesis and purification of multi-walled carbon nanotubes for field emitter applications
pp. 785-791(7)
Authors: Yumura M.; Ohshima S.; Uchida K.; Tasaka Y.; Kuriki Y.; Ikazaki F.; Saito Y.; Uemura S.

Field emission measurements with micrometre resolution on carbon nanostructures
pp. 792-797(6)
Authors: Worhoff K.; Driessen A.; Lambeck P.V.; Hilderink L.T.H.; Linders P.W.C.; Popma T.J.A.; Stammler M.; Ristein J.; Habermann T.; Gohl A.; Janischowsky K.; Nau D.; Muller G.; Ley L.

A theoretical model of electron emission from amorphous carbon nitride films
pp. 798-800(3)
Authors: Dinescu M.; Stanciu C.; Ghica D.; Dinu R.; Sandu V.; Nastase N.; Balucani M.; Bondarenko V.; Frachina L.; Lamedica G.; Ferrari A.; Xanthakis J.P.; Modinos A.

Carbon FED requirements - application to a PLD carbon cathode
pp. 801-804(4)
Authors: Semeria M.N.; Baylet J.; Montmayeul B.; Germain C.; Angleraud B.; Catherinot A.

Surface properties of nanodiamond films deposited by electrophoresis on Si(100)
pp. 805-808(4)
Authors: Maillard-Schaller E.; Kuettel O.M.; Diederich L.; Schlapbach L.; Zhirnov V.V.; Belobrov P.I.

Effect of surface treatment and back contact material on field emission from tetrahedral amorphous carbon
pp. 809-813(5)
Authors: Goncalves C.; Ferreira J.; Fortunato E.; Ferreira I.; Martins R.; Marvao A.P.; Martins J.I.; Harder T.; Oppelt R.; Hart A.; Satyanarayana B.S.; Milne W.I.; Robertson J.

Electron field emission and structural properties of carbon chemically vapor-deposited films
pp. 814-819(6)
Authors: Obraztsov A.N.; Pavlovsky I.Y.; Volkov A.P.; Petrov A.S.; Petrov V.I.; Rakova E.V.; Roddatis V.V.

Electrochemical behavior of synthetic diamond thin film electrodes
pp. 820-823(4)
Authors: Perret A.; Haenni W.; Skinner N.; Tang X.-M.; Gandini D.; Comninellis C.; Correa B.; Foti G.

Sonoelectrochemistry at tungsten-supported boron-doped CVD diamond electrodes
pp. 824-829(6)
Authors: Goeting C.H.; Foord J.S.; Marken F.; Compton R.G.

Diamond-coated tools
pp. 830-833(4)
Authors: Faure C.; Hanni W.; Schmutz C.J.; Gervanoni M.

Preparation and wear behaviour of woodworking tools coated with superhard layers
pp. 834-839(6)
Authors: Endler I.; Bartsch K.; Leonhardt A.; Scheibe H.-J.; Ziegele H.; Fuchs I.; Raatz C.

A simple model to describe the anisotropy of diamond polishing
pp. 840-844(5)
Authors: Serre C.; Perez-Rodrguez A.; Morante J.R.; Gorostiza P.; Esteve J.; van Bouwelen F.M.; van Enckevort W.J.P.

Growth and erosive wear performance of diamond coatings on WC substrates
pp. 845-849(5)
Authors: Rossi C.; Esteve D.; Mingues C.; Amirhaghi S.; Reehal H.S.; Plappert E.; Bajic Z.; Wood R.J.K.; Wheeler D.W.

Fracture and erosion of CVD diamond
pp. 850-854(5)
Authors: Telling R.H.; Field J.E.

Ultramicrohardness cross-profiling of CVD diamond/steel brazed junctions
pp. 855-858(4)
Authors: Seguin J.-L.; Bendahan M.; Lauque P.; Jacolin C.; Pasquinelli M.; Knauth P.; Fernandes A.J.S.; Fonseca M.J.; Costa F.M.; Silva R.F.; Nazare M.H.

Study of the wear behavior and adhesion of diamond films deposited on steel substrates by use of a Cr-N interlayer
pp. 859-864(6)
Authors: Lang W.; Pavlicek H.; Marx T.; Scheithauer H.; Schmidt B.; Glozman O.; Halperin G.; Etsion I.; Berner A.; Shectman D.; Lee G.H.; Hoffman A.

Erosion of free-standing CVD diamond film
pp. 865-870(6)
Authors: Kim J.-H.; Lim D.-S.

Transient photoresponse of CVD diamond-based detectors in the time domain 10^-9s-10³s
pp. 871-876(6)
Authors: Salvatori S.; Rossi M.C.; Galluzzi F.; Riedel D.; Castex M.C.

Instantaneous annealing of CVD diamond during high dose-rate ion implantation
pp. 877-881(5)
Authors: Kalish R.; Uzan-Saguy C.; Ran B.; Ferber H.; Guettler H.; Zachai R.

Photocurrent and optical absorption spectroscopic study of n-type phosphorus-doped CVD diamond
pp. 882-885(4)
Authors: Nesladek M.; Meykens K.; Haenen K.; Stals L.M.; Teraji T.; Koizumi S.

Optimising the electronic and optoelectronic properties of thin-film diamond
pp. 886-891(6)
Authors: Gaudin O.; Watson S.; Lansley S.P.; Looi H.J.; Whitfield M.D.; Jackman R.B.

Analysis of transient currents due to the electron beam irradiation to boron-doped homoepitaxial diamond films
pp. 892-896(5)
Authors: Tomokage H.; Sato H.; Usami S.; Kim Y.; Kiyota H.; Ando T.

Radiation-activated development of defective structure in type Ia diamond
pp. 897-902(6)
Authors: Ositinskaya T.D.; Tkach V.N.

Free-standing CVD diamond wafers for thermal management by d.c. arc jet technology
pp. 903-908(6)
Authors: Gray K.J.; Windischmann H.

Properties of large single crystal diamond
pp. 909-915(7)
Authors: Linares R.; Doering P.

Coatings for the protection of diamond in high-temperature environments
pp. 916-919(4)
Authors: McGeoch S.P.; Placido F.; Gou Z.; Wort C.J.H.; Savage J.A.

Semitransparent CVD diamond detectors for in situ synchrotron radiation beam monitoring
pp. 920-926(7)
Authors: Verardi P.; Dinescu M.; Craciun F.; Dinu R.; Sandu V.; Tapfer L.; Cappello A.; Bergonzo P.; Brambilla A.; Tromson D.; Marshall R.D.; Jany C.; Foulon F.; Gauthier C.; Sole V.A.; Rogalev A.; Goulon J.

High-preformance diamond surface-channel field-effect transistors and their operation mechanism
pp. 927-933(7)
Authors: Tsugawa K.; Kitatani K.; Noda H.; Hokazono A.; Hirose K.; Tajima M.; Kawarada H.

Diamond MEMS - a new emerging technology
pp. 934-940(7)
Authors: Kohn E.; Gluche P.; Adamschik M.

Diamond junction FETs based on -doped channels
pp. 941-945(5)
Authors: Aleksov A.; Vescan A.; Kunze M.; Gluche P.; Ebert W.; Kohn E.; Bergmeier A.; Dollinger G.

An optically activated diamond field effect transistor
pp. 946-951(6)
Authors: Lansley S.P.; Looi H.J.; Whitfield M.D.; Jackman R.B.

Thin film diamond alpha detectors for dosimetry applications
pp. 952-955(4)
Authors: Bergonzo P.; Foulon F.; Marshall R.D.; Jany C.; Brambilla A.; McKeag R.D.; Jackman R.B.

Manufacture and performance of diamond-coated thermocouples
pp. 956-960(5)
Authors: Smith N.P.; Ashfold M.N.R.; Smith D.J.; Pearce T.R.A.

Carbide contacts on homoepitaxial diamond films
pp. 961-965(5)
Authors: Muret P.; Pruvost F.; Saby C.; Lucazeau E.; Nguyen Tan T.A.; Gheeraert E.; Deneuville A.

Progress towards high power thin film diamond transistors
pp. 966-971(6)
Authors: Looi H.J.; Pang L.Y.S.; Whitfield M.D.; Foord J.S.; Jackman R.B.