Interface vacancy relocation model for annealing effect on exchange coupling between ferro-antiferromagnetic layers in NiFe/FeMn polycrystalline layer system
Authors: Hou, C.; Zhang, K.; Fujiwara, H.
Source: Journal of Magnetism and Magnetic Materials, Volume 251, Number 1, October 2002 , pp. 9-15(7)
Document Type: Research Article
Affiliations: Seagate Technology, 7801 Computer Ave. S NRW 102, 77435, Bloomington, MN, USA
Publication date: October 2002