Surface and Coatings Technology

Preface
pp. xi-xii(2)
Authors: Yamada I.; Yukimura K.; Horino Y.

Plasma-based ion implantation and its application to three-dimensional materials
pp. 1-6(6)
Author: Yukimura K.

New trends in PBII technology: industrial perspectives and limitations
pp. 7-15(9)
Authors: Pelletier J.; Le Coeur F.; Arnal Y.; Lacoste A.; Straboni A.

Vacuum arc metal plasma production and the transition of processing mode from metal ion beam to dc metal plasma immersion
pp. 16-22(7)
Author: Brown I.G.

Development of hybrid pulse plasma coating system
pp. 23-27(5)
Authors: Sakudo N.; Awazu K.; Yasui H.; Saji E.; Okazaki K.; Hasegawa Y.; Ikenaga N.; Kanda K.; Nambo Y.; Saitoh K.

Plasma immersion ion implantation experiments at the Instituto Nacional de Pesquisas Espaciais (INPE), Brazil
pp. 28-31(4)
Authors: Ueda M.; Berni L.A.; Rossi J.O.; Barroso J.J.; Gomes G.F.; Beloto A.F.; Abramof E.

Development of plasma-based ion implantation (PBII) techniques at Osaka National Research Institute (ONRI)
pp. 32-35(4)
Authors: Chun S.-Y.; Chayahara A.; Horino Y.

Shunting arc generation by co-axial electrode configuration
pp. 36-39(4)
Authors: Yukimura K.; Tani Y.; Yoshioka K.

Production of focused electron beams in a plasma implantation system
pp. 40-42(3)
Authors: Adler R.J.; Richter-Sand R.J.; Abercrombie J.

Plasma immersion ion implantation experiments with long and short rise time pulses using high voltage hard tube pulser
pp. 43-46(4)
Authors: Rossi J.O.; Ueda M.; Barroso J.J.

Basic investigations of an integrated modulator for plasma immersion ion implantation
pp. 47-50(4)
Authors: Gunzel R.; Hornauer U.; Rogozin A.I.; Astrelin V.T.

A new method to build a high-voltage pulse supply using only semiconductor switches for plasma-immersion ion implantation
pp. 51-54(4)
Authors: Redondo L.M.; Margato E.; Fernando Silva J.

Shunting arc as a pulsed ion source for solid-state materials for plasma-based ion implantation
pp. 55-59(5)
Authors: Yukimura K.; Yoshioka K.; Tani Y.; Masamune S.

Development of internal-antenna-driven large-volume RF plasma sources for plasma-based ion implantation
pp. 60-64(5)
Authors: Setsuhara Y.; Miyake S.; Sakawa Y.; Shoji T.

Inverter plasma discharge system
pp. 65-68(4)
Authors: Sugimoto S.; Kiuchi M.; Takechi S.; Tanaka K.; Goto S.

Operational parameter effects on inverter plasma performance
pp. 69-72(4)
Authors: Takechi S.; Sugimoto S.; Kiuchi M.; Tanaka K.; Goto S.

Surface processes and diffusion mechanisms of ion nitriding of stainless steel and aluminium
pp. 73-79(7)
Authors: Moller W.; Parascandola S.; Telbizova T.; Gunzel R.; Richter E.

Studies on treatment homogeneity of plasma immersion ion implantation by an optical method
pp. 80-84(5)
Authors: Volz K.; Hasse A.; Ensinger W.

Width, structure and stability of sheaths in metal plasma immersion ion implantation and deposition: measurements and analytical considerations
pp. 85-92(8)
Author: Anders A.

Spatial and temporal growth and collapse in a PBII plasma
pp. 93-96(4)
Authors: Yatsuzuka M.; Miki S.; Morita R.; Azuma K.; Fujiwara E.

Measurement of sheath expansion in plasma source ion implantation
pp. 97-101(5)
Authors: Kim Y.-W.; Kim G.-H.; Han S.; Lee Y.; Cho J.; Rhee S.-Y.

Spatial distributions of ion-species in a large-volume inductively coupled plasma source
pp. 102-105(4)
Authors: Okuji S.; Sakudo N.; Hayashi K.; Okada M.; Onogawa T.; Maesaka T.; Nishiyama Y.; Komatsu K.; Toyoda K.; Yashima S.; Ishida T.; Awazu K.

The measurement of nitrogen ion species ratio in inductively coupled plasma source ion implantation
pp. 106-110(5)
Authors: Cho J.; Han S.; Lee Y.; Kim O.K.; Kim G.-H.; Kim Y.-W.; Lim H.; Suh M.

Measurements of secondary electrons emitted from conductive substrates under high-current metal ion bombardment
pp. 111-116(6)
Authors: Anders A.; Yushkov G.Y.

Ion mass and scaling effects in PIII simulation
pp. 117-121(5)
Authors: Keller G.; Mandl S.; Rude U.; Rauschenbach B.

Dynamic MC simulations of diamond-like carbon film synthesis by plasma-based ion implantation
pp. 122-126(5)
Authors: Miyagawa Y.; Nakao S.; Ikeyama M.; Miyagawa S.

Ion current analysis in pulsed RF plasma as a fundamental research of plasma-based ion implantation
pp. 127-131(5)
Authors: Tenno N.; Yukimura K.; Masamune S.

Modeling of energy distributions for plasma implantation
pp. 132-137(6)
Authors: Linder B.P.; Cheung N.W.

A plasma immersion implantation system for materials modification
pp. 138-141(4)
Authors: Current M.I.; Liu W.; Roth I.S.; Lamm A.J.; En W.G.; Malik I.J.; Feng L.; Bryan M.A.; Qin S.; Henley F.J.; Chan C.; Cheung N.W.

Preparation of gallium nitride (GaN) and related compounds by plasma immersion ion implantation and rapid thermal annealing
pp. 142-145(4)
Authors: Ho A.H.P.; Kwok D.T.K.; Zeng X.C.; Chan C.; Chu P.K.

Energy distribution and depth profile in BF₃ plasma doping
pp. 146-150(5)
Authors: Kwok D.T.K.; Chu P.K.; Takase M.; Mizuno B.

Applications of plasma immersion ion implantation in microelectronics - a brief review
pp. 151-156(6)
Authors: Chu P.K.; Chan C.

Characteristics of BF₃ plasma-doped gate/source/drain for 0.18-m pMOSFETs
pp. 157-161(5)
Authors: Ha J.-M.; Park J.-W.; Felch S.; Fujihara K.; Kang H.-K.; Lee S.-I.

The use of plasma immersion ion processing in the synthesis of protective coatings for Al die casting
pp. 162-167(6)
Authors: Nastasi M.; He X.-M.; Walter K.C.; Hakovirta M.; Trkula M.

TiN coating and ion implantation of materials with three-dimensional topology in metal DC plasma-based ion implantation
pp. 168-171(4)
Authors: Sano M.; Teramoto T.; Yukimura K.; Maruyama T.

DLC films formed by hybrid pulse plasma coating (HPPC) system
pp. 172-175(4)
Authors: Awazu K.; Sakudo N.; Yasui H.; Saji E.; Okazaki K.; Hasegawa Y.; Ikenaga N.; Kanda K.; Nambo Y.; Saitoh K.

PIII-nitriding of boron implantated stainless steel
pp. 176-180(5)
Authors: Mandl S.; Gunzel R.; Hammerl C.; Richter E.; Rauschenbach B.; Moller W.

Nitrogen and carbon expanded austenite produced by PI³
pp. 181-187(7)
Authors: Blawert C.; Kalvelage H.; Mordike B.L.; Collins G.A.; Short K.T.; Jiraskova Y.; Schneeweiss O.

Combined deposition and implantation in the cathodic arc for thick film preparation
pp. 188-191(4)
Authors: Tarrant R.N.; Montross C.S.; McKenzie D.R.

Preparation and properties of nitrogen and titanium oxide incorporated diamond-like carbon films by plasma source ion implantation
pp. 192-196(5)
Authors: Baba K.; Hatada R.

Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases
pp. 197-201(5)
Authors: Volz K.; Baba K.; Hatada R.; Ensinger W.

Inner wall coating of cylinders by plasma immersion ion implantation for corrosion protection
pp. 202-206(5)
Authors: Ensinger W.; Volz K.; Enders B.

Corrosion resistance of TiN coatings produced by various dry processes
pp. 207-210(4)
Authors: Morita R.; Azuma K.; Inoue S.; Miyano R.; Takikawa H.; Kobayashi A.; Fujiwara E.; Uchida H.; Yatsuzuka M.

Effects of carbon ion pre-implantation on the mechanical properties of ta-C coatings on Ti-6Al-4V
pp. 211-216(6)
Authors: Tong H.H.; Monteiro O.R.; Brown I.G.

Oxygen and hydrogen profiles in metal surfaces following plasma immersion ion implantation of helium
pp. 217-222(6)
Authors: Johnson P.B.; Gilberd P.W.; Markwitz A.; Trompetter W.J.; Collins G.A.; Short K.T.; Cohen D.D.; Dytlewski N.

Profile of implanted nitrogen ions in Al alloy for mold materials
pp. 223-225(3)
Authors: Yamanishi T.; Hara Y.; Morita R.; Azuma K.; Fujiwara E.; Yatsuzuka M.

Evolution of microstructure of instrumental AISI M2 steel after plasma immersion nitrogen and carbon implantation
pp. 226-230(5)
Authors: Uglov V.V.; Fedotova J.A.; Kuleshov A.K.; Danilyuk A.L.; Kvasov N.T.; Gunzel R.; Reuther R.; Richter E.

Plasma-based nitrogen implantation of chrome-plated steel
pp. 231-235(5)
Authors: Xu G.C.; Okui M.; Hibino Y.; Iwamoto N.; Yamaguchi K.

Rutile formation and oxygen diffusion in oxygen PIII-treated titanium
pp. 236-240(5)
Authors: Thorwarth G.; Mandl S.; Rauschenbach B.

Synthesis and properties of TiO₂ thin films by plasma source ion implantation
pp. 241-243(3)
Authors: Baba K.; Hatada R.

Plasma immersion ion implantation of nitrogen in Si: formation of SiO₂, Si₃N₄ and stressed layers under thermal and sputtering effects
pp. 244-248(5)
Authors: Ueda M.; Beloto A.F.; Reuther H.; Parascandola S.

Nano-indentation testing for plasma-based ion-implanted surface of plastics
pp. 249-251(3)
Authors: Tonosaki M.; Okita H.; Takei Y.; Chayahara A.; Horino Y.; Tsubouchi N.

Results from 2 years of operation of a plasma implantation facility
pp. 252-254(3)
Authors: Adler R.J.; Horne W.; Brunke R.; Scheuer J.T.

Monitoring of ion mass composition in plasma immersion ion implantation
pp. 255-260(6)
Authors: Kim G.H.; Rim G.H.; Nikiforov S.A.

Determination of heat and ion fluxes in plasma immersion ion implantation by in situ measurement of temperature using laser interferometry
pp. 261-264(4)
Authors: Takaki K.; Koseki D.; Fujiwara T.

Analysis of hydrophile process of a polymer surface with an inverter plasma
pp. 265-268(4)
Authors: Murakami N.; Tanaka K.; Sugimoto S.; Kiuchi M.; Goto S.

Surface treatment of steel by short pulsed injection of high-power ion beam
pp. 269-272(4)
Authors: Akamatsu H.; Ikeda T.; Azuma K.; Fujiwara E.; Yatsuzuka M.

Ion-assisted deposition of copper using an inverter plasma
pp. 273-275(3)
Authors: Kiuchi M.; Murai K.; Tanaka K.; Takechi S.; Sugimoto S.; Goto S.

Influence of Al film deposition and following treatment on the high temperature isothermal oxidation behavior of a -TiAl-based alloy
pp. 276-280(5)
Authors: Li X.Y.; Zhu Y.-C.; Fujita K.; Iwamoto N.; Matsunaga Y.; Nakagawa K.; Taniguchi S.

RF ion source for low energy ion implantation - beam profile control of a large-area ion source using 500-MHz discharge
pp. 281-284(4)
Authors: Tanjyo M.; Sakai S.; Takahashi M.

Negative bias effect on film growth using pulsed vacuum arc plasma for multilayers
pp. 285-289(5)
Authors: Chun S.-Y.; Chayahara A.; Horino Y.