Chemical and electronic structures of Lu2O3/Si interfacial transition layer

Authors: Nohira H.1; Shiraishi T.; Nakamura T.; Takahashi K.; Takeda M.; Ohmi S.; Iwai H.; Hattori T.

Source: Applied Surface Science, Volume 216, Number 1, 30 June 2003 , pp. 234-238(5)

Publisher: Elsevier

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Keywords: High-K; Lu2O3; Transition layer; Silicate; Depth profiling; XPS

Language: English

Document Type: Research article

DOI: 10.1016/S0169-4332(03)00425-2

Affiliations: 1: Department of Electrical and Electronic Engineering, Musashi Institute of Technology Engineering, 1-28-1 Tamazutumi, Setagaya, 158-8557, Tokyo, Japan

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