Oxygen radical treatment applied to ferroelectric thin films

Authors: Takahashi I.1; Sakurai H.; Yamada A.; Funaiwa K.; Hirai K.; Urabe S.; Goto T.; Hirayama M.; Teramoto A.; Sugawa S.; Ohmi T.

Source: Applied Surface Science, Volume 216, Number 1, 30 June 2003 , pp. 239-245(7)

Publisher: Elsevier

Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content

Keywords: Sr2(Ta1-x,Nbx)2O7 (STN); Oxygen radical treatment; Low temperature treatment; Oxidizing ferroelectric effectively; Kr/O2 plasma

Language: English

Document Type: Research article

DOI: 10.1016/S0169-4332(03)00424-0

Affiliations: 1: Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 05 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Miyagi, Japan

This article is hosted on another website.

You may be required to register, activate a subscription or purchase the article before you can obtain the full text.

Proceed

Back to top

Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content
Page Help Click here for Page Help
Shopping cart
Tools
Sign in






Need to register?
Sign up here
Text size: A | A | A | A