Oxygen radical treatment applied to ferroelectric thin films

Authors: Takahashi I.; Sakurai H.; Yamada A.; Funaiwa K.; Hirai K.; Urabe S.; Goto T.; Hirayama M.; Teramoto A.; Sugawa S.; Ohmi T.

Source: Applied Surface Science, Volume 216, Number 1, 30 June 2003 , pp. 239-245(7)

Publisher: Elsevier

Keywords: Sr₂(Ta_1-x,Nb_x)₂O₇ (STN); Oxygen radical treatment; Low temperature treatment; Oxidizing ferroelectric effectively; Kr/O₂ plasma

Language: English

Document Type: Research article

DOI: http://dx.doi.org/10.1016/S0169-4332(03)00424-0

Affiliations: 1: Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 05 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Miyagi, Japan

Publication date: 2003-06-30

• In this: publication
• By this: publisher
• In this Subject: General & Civil Engineering
• By this author: Takahashi I. ;  Sakurai H. ;  Yamada A. ;  Funaiwa K. ;  Hirai K. ;  Urabe S. ;  Goto T. ;  Hirayama M. ;  Teramoto A. ;  Sugawa S. ;  Ohmi T.

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