Oxygen radical treatment applied to ferroelectric thin films

Authors: Takahashi I.1; Sakurai H.; Yamada A.; Funaiwa K.; Hirai K.; Urabe S.; Goto T.; Hirayama M.; Teramoto A.; Sugawa S.; Ohmi T.

Source: Applied Surface Science, Volume 216, Number 1, 30 June 2003 , pp. 239-245(7)

Publisher: Elsevier

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Keywords: Sr2(Ta1-x,Nbx)2O7 (STN); Oxygen radical treatment; Low temperature treatment; Oxidizing ferroelectric effectively; Kr/O2 plasma

Language: English

Document Type: Research article

DOI: 10.1016/S0169-4332(03)00424-0

Affiliations: 1: Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 05 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Miyagi, Japan

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