Reliability of silicon nitride gate dielectrics grown at 400 oC formed by microwave-excited high-density plasma

Authors: Ohshima I.; Cheng W.1; Ono Y.; Higuchi M.; Hirayama M.; Teramoto A.; Sugawa S.; Ohmi T.

Source: Applied Surface Science, Volume 216, Number 1, 30 June 2003 , pp. 246-251(6)

Publisher: Elsevier

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Keywords: Si3N4; MNS; Reliability; Krypton; Insulator; Si surface orientation; Plasma nitridation

Language: English

Document Type: Research article

DOI: 10.1016/S0169-4332(03)00423-9

Affiliations: 1: Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 04 Aza-Aoba, Aramaki, Aoba-ku, 980-8579, Sendai, Japan

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