Applied Surface Science

Editorial Board
pp. ii-ii(1)

Author Index
pp. I-VIII(8)

Subject Index
pp. IX-XXXII(24)

Preface
pp. 1-1(1)
Author: Hiraki A.

The National Si-Soft Project
pp. 2-7(6)
Authors: Chang C.-Y.; Trappey C.V.

Coexistence of passive and active oxidation for O₂/Si(0 0 1) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopy
pp. 8-14(7)
Authors: Teraoka Y.; Moritani K.; Yoshigoe A.

Adsorption of Si atom on H-terminated Si(001)-2 x 1 surface
pp. 15-18(4)
Authors: Hashizume T.; Kajiyama H.; Suwa Y.; Heike S.; Matsuura S.; Nara J.; Ohno T.

Temperature dependence of flat Ge/Si(0 0 1) heterostructures as observed by CAICISS
pp. 19-23(5)
Authors: Tsushima R.; Katayama M.; Fujino T.; Shindo M.; Okuno T.; Oura K.

Anomalously large band-bending for HF-treated p-Si surfaces
pp. 24-29(6)
Authors: Watanabe D.; En A.; Nakamura S.; Suhara M.; Okumura T.

Stochastic motion of 7 x 7 kinks at monoatomic step edges on the Si(1 1 1) surface
pp. 30-34(5)
Authors: Fukuda T.; Maeda S.; Nakayama H.

Study of Sb adsorption on the Si(0 0 1)-In(4 x 3) surface
pp. 35-40(6)
Authors: Gruznev D.; Furukawa Y.; Mori M.; Tambo T.; Lifshits V.G.; Tatsuyama C.

Surface stress relaxation in SiO₂ films by plasma nitridation and nitrogen distribution in the film
pp. 41-45(5)
Authors: Itakura A.N.; Shimoda M.; Kitajima M.

Novel post CMP cleaning using buffered HF solution and ozone water
pp. 46-53(8)
Authors: Yeh C.-F.; Hsiao C.-W.; Lee W.-S.

Investigation of SiC clean surface and Ni/SiC interface using scanning tunneling microscopy
pp. 54-58(5)
Authors: Hattori N.; Hirai M.; Kusaka M.; Iwami M.

Hydrogen-related structural changes on CVD diamond (1 0 0) surfaces by ultra-high-vacuum annealing
pp. 59-64(6)
Authors: Nakamura J.; Fukumoto S.; Teraji T.; Murakami H.; Ito T.

Field-induced effects of implanted Ga on high electric field diamond devices fabricated by focused ion beam
pp. 65-71(7)
Authors: Hamada M.; Teraji T.; Ito T.

Effect of Ni-Cu substrates on phase selection of hexagonal and cubic boron nitride thin films
pp. 72-77(6)
Authors: Kotake S.; Hasegawa T.; Kamiya K.; Suzuki Y.; Masui T.; Kangawa Y.; Nakamura K.; Ito T.

Anisotropy of lateral growth rate in liquid phase epitaxy of {0 0 1} InP
pp. 78-82(5)
Authors: Kochiya T.; Oyama Y.; Suto K.; Nishizawa J.-I.

Lattice distortion near InGaP compound semiconductor surface due to surface treatment of bias sputtering
pp. 83-87(5)
Authors: Emoto T.; Yoshida Y.; Akimoto K.; Ichimiya A.; Kikuchi S.; Itagaki K.; Namita H.

Laser-stimulated control of interfaces at grain boundaries in polycrystalline Cd_xHg_1-xTe films
pp. 88-93(6)
Authors: Gnatyuk V.A.; Aoki T.; Hatanaka Y.

Passivation of defects in polycrystalline Cu₂O thin films by hydrogen or cyanide treatment
pp. 94-97(4)
Authors: Ishizuka S.; Kato S.; Okamoto Y.; Sakurai T.; Akimoto K.; Fujiwara N.; Kobayashi H.

Modification of GaAs and copper surface by the formation of SiO₂ aerogel film as an interlayer dielectric
pp. 98-105(8)
Authors: Park S.-W.; Jung S.-B.; Kang M.-G.; Park H.-H.; Kim H.-C.

Interface formation and properties of -NPD thermally deposited on CVD diamond films
pp. 106-112(7)
Authors: Chun M.-S.; Teraji T.; Ito T.

Contactless electrical characterization of surface and interface of SOI materials
pp. 113-118(6)
Authors: Nakamura S.; Watanabe D.; En A.; Suhara M.; Okumura T.

Device-quality GaN-dielectric interfaces by 300^oC remote plasma processing
pp. 119-123(5)
Authors: Bae C.; Rayner G.B.; Lucovsky G.

Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al₂O₃
pp. 124-132(9)
Authors: Hinkle C.; Lucovsky G.

Phase transition from Langmuir-type adsorption to two-dimensional oxide island growth during oxidation on Si(0 0 1) surface
pp. 133-140(8)
Authors: Takakuwa Y.; Ishida F.; Kawawa T.

Theoretical study on the initial processes of nitridation of silicon thin film
pp. 141-148(8)
Authors: Yoshida S.; Doi K.; Nakamura K.; Tachibana A.

Correlation between deposition parameters and structural modification of amorphous carbon nitride (a-CN_x) film in magnetron sputtering
pp. 149-155(7)
Authors: Jung H.-S.; Park H.-H.

The role of vacuum ultraviolet in H₂ plasma treatment on SiO₂ aerogel film
pp. 156-162(7)
Authors: Jung S.-B.; Park H.-H.; Kim H.

The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems
pp. 163-168(6)
Authors: Adams D.; Julies B.A.; Mayer J.W.; Alford T.L.

Surface and interface study of Cu (film)/SiC (substrate) system
pp. 169-173(5)
Authors: An Z.; Hirai M.; Kusaka M.; Iwami M.

Effect of Al interlayers on two-step epitaxial growth of CoSi₂ on Si(1 0 0)
pp. 174-180(7)
Authors: Nakatsuka O.; Onoda H.; Okada E.; Ikeda H.; Sakai A.; Zaima S.; Yasuda Y.

Diffusion barrier properties of nano-crystalline TiZrN films in Cu/Si contact systems
pp. 181-186(6)
Authors: Takeyama M.B.; Itoi T.; Aoyagi E.; Noya A.

Nano-structure of transition-metal (Ti, Ni)/SiC system: photo-emission electron microscopy and soft X-ray fluorescence spectroscopy
pp. 187-191(5)
Authors: Hirai M.; Labis J.P.; Ohi A.; Kamezawa C.; Morikawa Y.; Yoshida K.; Kusaka M.; Iwami M.

Properties of GaN and AlGaN Schottky contacts revealed from I-V-T and C-V-T measurements
pp. 192-197(6)
Authors: Sawada T.; Izumi Y.; Kimura N.; Suzuki K.; Imai K.; Kim S.-W.; Suzuki T.

Process-induced defects and potential distribution in nearly ideal Au/Si Schottky barriers
pp. 198-202(5)
Author: Maeda K.

Interface-controlled Gd₂O₃/GaAs system for ferroelectric memory application
pp. 203-207(5)
Authors: Yang J.-K.; Kim W.S.; Park H.-H.

Built-in interface in high- gate stacks
pp. 208-214(7)
Authors: Hiratani M.; Torii K.; Shimamoto Y.; Saito S.-I.

Band offset energies in zirconium silicate Si alloys
pp. 215-222(8)
Authors: Lucovsky G.; Rayner B.; Zhang Y.; Appel G.; Whitten J.

Diffusion and incorporation of Zr into thermally grown SiO₂ on Si(1 0 0)
pp. 223-227(5)
Authors: Yamaoka M.; Murakami H.; Miyazaki S.

Comparison of thermal and plasma oxidations for HfO₂/Si interface
pp. 228-233(6)
Authors: Hayashi S.; Yamamoto K.; Harada Y.; Mitsuhashi R.; Eriguchi K.; Kubota M.; Niwa M.

Chemical and electronic structures of Lu₂O₃/Si interfacial transition layer
pp. 234-238(5)
Authors: Nohira H.; Shiraishi T.; Nakamura T.; Takahashi K.; Takeda M.; Ohmi S.; Iwai H.; Hattori T.

Oxygen radical treatment applied to ferroelectric thin films
pp. 239-245(7)
Authors: Takahashi I.; Sakurai H.; Yamada A.; Funaiwa K.; Hirai K.; Urabe S.; Goto T.; Hirayama M.; Teramoto A.; Sugawa S.; Ohmi T.

Reliability of silicon nitride gate dielectrics grown at 400 ^oC formed by microwave-excited high-density plasma
pp. 246-251(6)
Authors: Ohshima I.; Cheng W.; Ono Y.; Higuchi M.; Hirayama M.; Teramoto A.; Sugawa S.; Ohmi T.

Electronic structure and energy band offsets for ultrathin silicon nitride on Si(1 0 0)
pp. 252-257(6)
Authors: Miyazaki S.; Narasaki M.; Suyama A.; Yamaoka M.; Murakami H.

The role of hydrogen migration in negative-bias temperature instability
pp. 258-263(6)
Authors: Ushio J.; Watanabe K.; Kushida-Abdelghafar K.; Maruizumi T.

New intrinsic pair defects in silicon dioxide interface
pp. 264-269(6)
Authors: Kitagawa I.; Maruizumi T.

Microscopic mechanism of interfacial reaction during Si oxidation
pp. 270-274(5)
Authors: Akiyama T.; Kageshima H.

Pinning-free GaAs MIS structures with Si interface control layers formed on (4 x 6) reconstructed (0 0 1) surface
pp. 275-282(8)
Authors: Anantathanasarn S.; Hasegawa H.

Compositional transition layer in SiO₂/Si interface observed by high-resolution RBS
pp. 283-286(4)
Authors: Kimura K.; Nakajima K.

Depth profiling of oxynitride film formed on Si(1 0 0) by photon energy dependent photoelectron spectroscopy
pp. 287-290(4)
Authors: Nishizaki K.; Nohira H.; Takahashi K.; Kamakura N.; Takata Y.; Shin S.; Kobayashi K.; Tamura N.; Hikazutani K.; Hattori T.

Interfacial chemistry and structures of ultrathin Si oxynitride films
pp. 291-295(5)
Authors: Oshima M.; Kimura K.; Ono K.; Horiba K.; Nakamura K.; Kumigashira H.; Oh J.-H.; Niwa M.; Usuda K.; Hirashita N.

Preparation of hafnium oxide films from oxygen-free Hf[N(C₂H₅)₂]₄ precursor and their properties
pp. 296-301(6)
Authors: Takahashi K.; Nakayama M.; Yokoyama S.; Kimura T.; Tokumitsu E.; Funakubo H.

Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics
pp. 302-306(5)
Authors: Ohshima C.; Taguchi J.; Kashiwagi I.; Yamamoto H.; Ohmi S.; Iwai H.

Si/SiO₂ interface attack during metal oxide growth under low oxygen pressure
pp. 307-311(5)
Authors: Kubo K.; Kiyohara M.; Shimoyama K.; Yamabe K.

An orientation ratio and ferroelectric properties of ultra-thin PTO films
pp. 312-317(6)
Authors: Nishida K.; Sugino T.; Osada M.; Kakihana M.; Katoda T.

Effects of the substrate on properties of PTO thin film
pp. 318-322(5)
Authors: Nishida K.; Matuoka G.; Osada M.; Kakihana M.; Katoda T.

Growth mechanism of PTO on MgO at initial stage
pp. 323-328(6)
Authors: Nishida K.; Shirakata K.; Osada M.; Kakihana M.; Katoda T.

Thickness dependent integrity of gate oxide on SOI
pp. 329-333(5)
Authors: Tsujiuchi M.; Iwamatsu T.; Naruoka H.; Umeda H.; Ipposhi T.; Maegawa S.; Inoue Y.

All-optical circular polarization switching phenomenon observed in photo chemically etched silicon
pp. 334-339(6)
Author: Yamamoto N.

Simulation of dislocation accumulation in ULSI cells with STI structure
pp. 340-346(7)
Authors: Ohashi T.; Sato M.; Maruizumi T.; Kitagawa I.

Improvement of hot-carrier-reliability by deuterium termination of Si/SiO₂ interface defects
pp. 347-350(4)
Authors: Takahashi H.; Yamada-Kaneta H.

Characterization of dielectric properties of ultrathin SiO₂ film formed on Si substrate
pp. 351-355(5)
Authors: Hirose K.; Kitahara H.; Hattori T.

Structural study of SiC(0 0 0 1)3x3 surface by surface X-ray diffraction
pp. 356-360(5)
Authors: Aoyama T.; Akimoto K.; Ichimiya A.; Hisada Y.; Mukainakano S.; Emoto T.; Tajiri H.; Takahashi T.; Sugiyama H.; Zhang X.; Kawata H.

In situ observation of step-terrace structures on MOVPE grown InP(001) by using grazing X-ray scattering
pp. 361-364(4)
Authors: Kawamura T.; Bhunia S.; Watanabe Y.; Fujikawa S.; Matsui J.; Kagoshima Y.; Tsusaka Y.

SiO₂/SiC interface proved by positron annihilation
pp. 365-370(6)
Authors: Maekawa M.; Kawasuso A.; Yoshikawa M.; Itoh H.

Study of Cu and Co gettering mechanism using radioactive isotope tracers
pp. 371-375(5)
Authors: Matsukawa K.; Naruoka H.; Hattori N.; Mashiko Y.

Nucleation and growth of nanocrystalline silicon studied by TEM, XPS and ESR
pp. 376-381(6)
Authors: Sato K.; Izumi T.; Iwase M.; Show Y.; Morisaki H.; Yaguchi T.; Kamino T.

Real-time measurement of rocking curves during MOVPE growth of Ga_xIn_1-xP/GaAs
pp. 382-387(6)
Authors: Bhunia S.; Kawamura T.; Watanabe Y.; Fujikawa S.; Matsui J.; Kagoshima Y.; Tsusaka Y.; Uchida K.; Sugiyama N.; Furiya M.; Nozaki S.; Morisaki H.

Real time observation of initial thermal oxidation using O₂ gas on Si(0 0 1) surface by means of synchrotron radiation Si-2p photoemission spectroscopy
pp. 388-394(7)
Authors: Yoshigoe A.; Moritani K.; Teraoka Y.

Real-time monitoring of oxidation on the Ti(0 0 0 1) surface by synchrotron radiation photoelectron spectroscopy and RHEED-AES
pp. 395-401(7)
Authors: Takakuwa Y.; Ishidzuka S.; Yoshigoe A.; Teraoka Y.; Yamauchi Y.; Mizuno Y.; Tonda H.; Homma T.

Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE
pp. 402-406(5)
Authors: Takahashi H.; Miyoshi Y.; Nakajima F.; Mohan P.; Motohisa J.; Fukui T.

Shape transition of InAs from two-dimensional islands to three-dimensional dots by annealing
pp. 407-412(6)
Authors: Iwasaki S.; Yamaguchi K.

Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD
pp. 413-418(6)
Authors: Asaoka N.; Funato H.; Suhara M.; Okumura T.

Precise control of size and density of self-assembled Ge dot on Si(1 0 0) by carbon-induced strain-engineering
pp. 419-423(5)
Authors: Wakayama Y.; Sokolov L.V.; Zakharov N.; Werner P.; Gosele U.

Si submonolayer and monolayer digital growth operation techniques using Si₂H₆ as atomically controlled growth nanotechnology
pp. 424-430(7)
Authors: Suda Y.; Hosoya N.; Miki K.

Characteristics of ZnO whiskers prepared from organic-zinc
pp. 431-435(5)
Authors: Kubota J.; Haga K.; Kashiwaba Y.; Watanabe H.; Zhang B.P.; Segawa Y.

Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations
pp. 436-446(11)
Authors: Kratzer P.; Penev E.; Scheffler M.

First-principles study for molecular beam epitaxial growth of GaN(0 0 0 1)
pp. 447-452(6)
Author: Ishii A.

Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE
pp. 453-457(5)
Authors: Kangawa Y.; Ito T.; Kumagai Y.; Koukitu A.

Systematic theoretical investigations of miscibility in Si_1-x-yGe_xC_y thin films
pp. 458-462(5)
Authors: Ito T.; Nakamura K.; Kangawa Y.; Shiraishi K.; Taguchi A.; Kageshima H.

First-principle theoretical study on the electronic properties of SiO₂ models with hydrogenated impurities and charges
pp. 463-470(8)
Authors: Doi K.; Nakamura K.; Tachibana A.

Ab initio study of 3C-SiC/M (M = Ti or Al) nano-hetero interfaces
pp. 471-477(7)
Authors: Tanaka S.; Kohyama M.

Dynamics of In atom during InAs/GaAs(0 0 1) growth process
pp. 478-482(5)
Authors: Ishii A.; Fujiwara K.; Aisaka T.

A field effect transistor using highly nitrogen-doped CVD diamond for power device applications
pp. 483-489(7)
Authors: Yokoyama Y.; Li X.; Sheng K.; Mihaila A.; Traikovic T.; Udrea F.; Amaratunga G.A.J.; Okano K.

Theoretical study on stable structures and diffusion mechanisms of B in SiO₂
pp. 490-496(7)
Authors: Otani M.; Shiraishi K.; Oshiyama A.

Epitaxial growth of 4H-SiC(0338) and control of MOS interface
pp. 497-501(5)
Authors: Kimoto T.; Hirao T.; Fujihira K.; Kosugi H.; Danno K.; Matsunami H.

Growth of GaN on ZrB₂ substrate by metal-organic vapor phase epitaxy
pp. 502-507(6)
Authors: Tomida Y.; Nitta S.; Kamiyama S.; Amano H.; Akasaki I.; Otani S.; Kinoshita H.; Liu R.; Bell A.; Ponce F.A.

Low-temperature growth of AlN on nearly lattice-matched MnO substrates
pp. 508-511(4)
Authors: Ito S.; Fujioka H.; Ohta J.; Sasaki A.; Liu J.; Yoshimoto M.; Koinuma H.; Oshima M.

Laser lift-off of very thin AlGaN film from sapphire using selective decomposition of GaN interlayer
pp. 512-518(7)
Authors: Ueda T.; Ishida M.; Yuri M.

Effects of surface processing on 2DEG current transport at AlGaN/GaN interface studied by gateless HFET structure
pp. 519-525(7)
Authors: Inagaki T.; Hashizume T.; Hasegawa H.

Composition dependence of InP/Ga_xIn_1-xAs_yP_1-y/InP interface structures analyzed by X-ray CTR scattering measurements
pp. 526-531(6)
Authors: Tabuchi M.; Kyouzu H.; Takemi M.; Takeda Y.

Growth mechanism in heavily carbon-doped GaAs_xSb_1-x grown by MOCVD
pp. 532-536(5)
Authors: Oda Y.; Watanabe N.; Yokoyama H.; Kobayashi T.

AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)₃)
pp. 537-541(5)
Authors: Akane T.; Jinno S.; Yang Y.; Kuno T.; Hirata T.; Isogai Y.; Watanabe N.; Fujiwara Y.; Nakamura A.; Takeda Y.

Improvement of power performance in planar type AlGaAs/GaAs MESFET by substrate surface oxidation
pp. 542-548(7)
Authors: Kagiyama T.; Saito Y.; Otobe K.; Nakajima S.

Area-selective regrowth followed by AsH₃ surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions
pp. 549-553(5)
Authors: Ohno T.; Oyama Y.; Tezuka K.; Suto K.; Nishizawa J.-i.

Short-period Si/Si_1-xGe_x multiple quantum wells: real-time spectro-ellipsometric characterization during growth by synchrotron-radiation-excited chemical-beam epitaxy
pp. 554-559(6)
Author: Akazawa H.

Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy
pp. 560-563(4)
Authors: Koizumi A.; Fujiwara Y.; Inoue K.; Yoshikane T.; Urakami A.; Takeda Y.

Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy
pp. 564-568(5)
Authors: Fujiwara Y.; Nonogaki Y.; Oga R.; Koizumi A.; Takeda Y.

Heteroepitaxial growth of InSb films on a Si(0 0 1) substrate via AlSb buffer layer
pp. 569-574(6)
Authors: Mori M.; Akae N.; Uotani K.; Fujimoto N.; Tambo T.; Tatsuyama C.

Initial stage of 3C-SiC growth on Si(0 0 1)-2 x 1 surface using monomethylsilane
pp. 575-579(5)
Authors: Narita Y.; Inubushi T.; Harashima M.; Yasui K.; Akahane T.

Radio frequency power dependence of the characteristics of 3C-SiC on Si grown by triode plasma CVD using dimethylsilane
pp. 580-584(5)
Authors: Yasui K.; Hashiba M.; Akahane T.

Mechanism of H₂ pre-annealing on the growth of GaN on sapphire by MOVPE
pp. 585-589(5)
Authors: Tsuda M.; Watanabe K.; Kamiyama S.; Amano H.; Akasaki I.; Liu R.; Bell A.; A. Ponce F.

Study of epitaxial SrTiO₃ (STO) thin films grown on Si(0 0 1)-2 x 1 substrates by molecular beam epitaxy
pp. 590-595(6)
Authors: Bhuiyan M.N.K.; Matsuda A.; Yasumura T.; Tambo T.; Tatsuyama C.

Improved surface morphology of sulfur-doped homoepitaxial diamond films by plasma CVD method with SF₆ Grading-Doping profile
pp. 596-602(7)
Authors: Fujii S.; Hino S.; Kobayashi T.

Magnetic and optical properties of novel magnetic semiconductor Cr-doped ZnO and its application to all oxide p-i-n diode
pp. 603-606(4)
Authors: Satoh I.; Kobayashi T.

Growth and annealing effect of ferromagnetic (Ga, Mn)As on Si(1 0 0) substrates
pp. 607-613(7)
Authors: Uchitomi N.; Sato S.; Jinbo Y.

Growth of -FeSi₂ on MnSi_1.7 layers by reactive deposition epitaxy
pp. 614-619(6)
Authors: Kohira M.; Souno Y.; Matsuyama T.; Tatsuoka H.; Ohsugi I.J.; Nishida I.A.; Kuwabara H.

Formation of CaMgSi at Ca₂Si/Mg₂Si interface
pp. 620-624(5)
Authors: Hosono T.; Kuramoto M.; Matsuzawa Y.; Momose Y.; Maeda Y.; Matsuyama T.; Tatsuoka H.; Fukuda Y.; Hashimoto S.; Kuwabara H.

Decay rates of exciton and phonon-assisted recombination in asymmetric GaAs/AlAs type II superlattices
pp. 625-629(5)
Authors: Sulaimanov A.K.; Braginsky L.S.; Gilinsky A.M.; Toropov A.I.; Bakarov A.K.; Zhuravlev K.S.