Applied Surface Science logo Elsevier logo

Publisher: Elsevier

Related content
Volume 215, Number 1, 15 June 2003

< previous issue | all issues | next issue >

Editorial Board
pp. ii-ii(1)

Author Index
pp. I-III(3)

Subject Index
pp. IV-IX(6)

Preface
pp. 1-4(4)
Authors: Gaertner G.; Anikin V.M.; Sinitsyn N.I.; Bakhtizin R.Z.; Gulyaev Y.V.

Barium depletion study on impregnated cathodes and lifetime prediction
pp. 5-17(13)
Authors: Roquais J.M.; Poret F.; le Doze R.; Ricaud J.L.; Monterrin A.; Steinbrunn A.

Miniature reservoir cathode-an update
pp. 18-24(7)
Authors: Vancil B.K.; Wintucky E.G.

Ion bombardment investigations of impregnated cathodes
pp. 25-32(8)
Authors: Zhang X.; Gaertner G.

Scandia-doped tungsten bodies for Sc-type cathodes
pp. 38-48(11)
Authors: Wang J.; Wang Y.; Tao S.; Li H.; Yang J.; Zhou M.

Investigation and application of impregnated scandate cathodes
pp. 49-53(5)
Authors: Li J.; Yan S.; Shao W.; Chen Q.; Zhu M.

Gas poisoning investigations of scandate and M-type dispenser cathodes
pp. 54-58(5)
Authors: Shao W.; Zhang K.; Li J.; Yan S.; Chen Q.

Recent developments in oxide cathode research for CRT applications
pp. 65-71(7)
Authors: Barratt D.S.; Gaertner G.

Accelerated life tests of CRT oxide cathodes
pp. 72-77(6)
Authors: Gaertner G.; Raasch D.; Barratt D.; Jenkins S.

Determination of the latent heat of phase transitions in ruthenium by means of a thermionic microscope
pp. 96-100(5)
Authors: Emel'yanov V.I.; Maslennikov O.Y.; Roukhlyada P.N.

Advanced structure of cathode for gas discharge lamp of super high pressure
pp. 101-104(4)
Authors: Kruglenya P.A.; Maslennikov O.Y.

Field emission in vacuum micro-electronics
pp. 113-134(22)
Author: Fursey G.N.

The field emission from carbon nanotubes
pp. 135-140(6)
Authors: Fursey G.N.; Novikov D.V.; Dyuzhev G.A.; Kotcheryzhenkov A.V.; Vassiliev P.O.

Fundamental and applied directions of field emission electronics using nanocluster carbon materials
pp. 141-148(8)
Authors: Gulyaev Y.V.; Sinitsyn N.I.; Torgashov G.V.; Saveliev S.G.

Ponderomotive forces effect on the field emission of carbon nanotube films
pp. 149-159(11)
Authors: Glukhova O.E.; Zhbanov A.I.; Torgashov I.G.; Sinitsyn N.I.; Torgashov G.V.

Peculiarities of the electron field emission from quantum-size structures
pp. 160-168(9)
Authors: Litovchenko V.G.; Evtukh A.A.; Litvin Y.M.; Goncharuk N.M.; Hartnagel H.; Yilmazoglu O.; Pavlidis D.

Electron spectroscopy of nanodiamond surface states
pp. 169-177(9)
Authors: Belobrov P.I.; Bursill L.A.; Maslakov K.I.; Dementjev A.P.

Prediction of field emitter cathode lifetime based on measurement of I-V curves
pp. 178-184(7)
Authors: Bormashov V.S.; Nikolski K.N.; Baturin A.S.; Sheshin E.P.

Regression equations modelling diffusion processes
pp. 185-190(6)
Authors: Anikin V.M.; Barulina Y.A.; Goloubentsev A.F.

CVD growth of carbon nanotube films on nickel substrates
pp. 201-208(8)
Authors: Kukovitsky E.F.; L'vov S.G.; Sainov N.A.; Shustov V.A.

CNTs grown on the surface of various materials by large volume MP-CVD for VME applications
pp. 209-213(5)
Authors: Liu G.Y.; Zhong D.Y.; Xia S.H.; Cheng S.F.; Ding Y.G.; Lu Y.J.; Shao Y.J.; Li H.Y.; Hangfu L.J.; Wang E.G.

Field emission characteristics of nanostructured thin film carbon materials
pp. 214-221(8)
Authors: Obraztsov A.N.; Volkov A.P.; Zakhidov A.A.; Lyashenko D.A.; Petrushenko Y.V.; Satanovskaya O.P.

Study of emission centers in amorphous carbon (a-C:H) by field electron and field desorption microscopy
pp. 222-227(6)
Authors: Bernatskii D.P.; Chernyshev A.V.; Ivanov-Omskii V.I.

Influence of the interelectrode distance in electrophoretic cold cathode fabrication on the emission uniformity
pp. 232-236(5)
Authors: Kurnosov D.A.; Baturin A.S.; Bugaev A.S.; Nikolski K.N.; Tchesov R.G.; Sheshin E.P.

Peculiarities of field emission from silicon carbide films
pp. 237-241(5)
Authors: Evtukh A.A.; Klyui N.I.; Litovchenko V.G.; Litvin Y.M.; Korneta O.B.; Puzikov V.M.; Semenov A.V.

Stratum-like structured metal alloy cathode
pp. 242-248(7)
Authors: Djubua B.C.; Polivnikova O.V.

Investigation of FEAs applied in vacuum electron gun
pp. 249-252(4)
Authors: Li X.; Yang C.; Bai G.; Zhang F.; Liao F.; Feng J.; Ding M.; Du Y.

Influence of parameters of field-emission cathodoluminescence light sources on their technical properties
pp. 253-259(7)
Authors: Popov M.O.; Bulakhov S.Y.; Karpov A.V.; Shiriaev S.A.; Skorokhodov E.N.; Suvorov A.L.

Characterizations of light sources with carbon fiber cathodes
pp. 260-264(5)
Authors: Leshukov M.Y.; Baturin A.S.; Chadaev N.N.; Sheshin E.P.

Suppression of secondary electrons from diamond by whisker formation
pp. 265-268(4)
Authors: Lee S.W.; Baik Y.J.; Kang C.J.; Jeon D.

Scanning electron and tunneling microscopy of palladium-barium emitters
pp. 269-272(4)
Authors: Baiburin V.B.; Volkov U.P.; Semenov S.V.; Semenov A.S.

A study of secondary electron emission properties of the molybdenum cathode doped with RE2O3
pp. 273-279(7)
Authors: Wang J.; Li H.; Liu J.; Wang Y.; Zhou M.; Gao Y.; Tao S.; Zhang J.

Peculiarities of constructing planar microminiature current sources based on secondary emission cathode excited by an edge FEA
pp. 280-285(6)
Authors: Zakharchenko Y.F.; Sinitsyn N.I.; Gulyaev Y.V.; Saveliev S.G.

Liquid carbon surface during explosive emission
pp. 286-290(5)
Authors: Fursey G.N.; Polyakov M.A.; Shirochin L.A.; Saveliev A.N.

A study of noise and collateral phenomena observed in central-cathode magnetron devices
pp. 291-300(10)
Authors: Karzhavin I.A.; Neyman B.Z.; Gundobin G.S.; Vislov V.I.; Lashenko A.V.; Levande A.B.

Computer simulation of magnetron devices
pp. 301-309(9)
Authors: Bayburin V.B.; Terentiev A.A.; Vislov V.I.; Levande A.B.; Guriev I.K.; Sysuev A.A.

< previous issue | all issues | next issue >

Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page