Electrical characterization of low temperature deposited TiO₂ films on strained-SiGe layers

Authors: Dalapati G.K.; Chatterjee S.; Samanta S.K.; Maiti C.K.¹

Source: Applied Surface Science, Volume 210, Number 3, 15 April 2003 , pp. 249-254(6)

Publisher: Elsevier

Keywords: Electrical characterization; Low temperature deposition; TiO₂ films; High-K

Language: English

Document Type: Research article

DOI: 10.1016/S0169-4332(03)00149-1

Affiliations: 1: Department of Electronics & ECE, IIT Kharagpur, 721302, Kharagpur, India

Links for this article

http://www.ingentaconnect.com/els/01694332/2003/00000210/00000003/art00149
http://openurl.ingenta.com/content?genre=article&issn=0169-4332&volume=210&issue=3&spage=249&epage=254
http://dx.doi.org/10.1016/S0169-4332(03)00149-1

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers