Interfacial layer formation in Gd2O3 films deposited directly on Si(0 0 1)

Authors: Gupta J.A.1; Landheer D.; Sproule G.I.; McCaffrey J.P.; Graham M.J.; Yang K.-C.; Lu Z.-H.; Lennard W.N.

Source: Applied Surface Science, Volume 173, Number 3, 29 March 2001 , pp. 318-326(9)

Publisher: Elsevier

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Keywords: [Physical Astronomy Classification Scheme] 77.55; [Physical Astronomy Classification Scheme] 79.60.D; [Physical Astronomy Classification Scheme] 61.10.K; [Physical Astronomy Classification Scheme] 61.16.B; [Physical Astronomy Classification Scheme] 82.80.P; Gd2O3; XPS; X-ray reflectivity; TEM; AES

Language: English

Document Type: Research article

DOI: 10.1016/S0169-4332(01)00014-9

Affiliations: 1: aInstitute for Microstructural Sciences, National Research Council of Canada, , K1A 0R6, Ottawa, Canada

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