Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target

Authors: Peng X.1; Song L.; Meng J.; Zhang Y.; Hu X.

Source: Applied Surface Science, Volume 173, Number 3, 29 March 2001 , pp. 313-317(5)

Publisher: Elsevier

Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content

Keywords: a-SiCxNy; FTIR spectra; Refractive index; Reactive sputtering; Si3N4 target

Language: English

Document Type: Research article

DOI: 10.1016/S0169-4332(01)00010-1

Affiliations: 1: State Key Lab of High Performance Ceramics & Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, 200050, Shanghai, China

This article is hosted on another website.

You may be required to register, activate a subscription or purchase the article before you can obtain the full text.

Proceed

Back to top

Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages.
Page Help Click here for Page Help
Shopping cart
Tools
Sign in






Need to register?
Sign up here
Text size: A | A | A | A