Applied Surface Science

Thermal desorption of Ba from tungsten
pp. 1-6(6)
Authors: Shih A.; Yater J.E.; Abrams R.

Doping effects of groups III, IV, or V elements on the emitter of CRT oxide cathodes
pp. 7-11(5)
Authors: Hayashida Y.; Ozawa T.; Sakurai H.

Dynamic shielding during ion bombardment of Ba dispenser cathodes
pp. 12-16(5)
Authors: Gartner G.; Geittner P.; Raasch D.; Ritz A.; Wiechert D.U.

Nonuniform emission distribution on a scandate impregnated cathode
pp. 17-21(5)
Authors: Sasaki S.; Yaguchi T.; Mori N.; Taguchi S.; Shibata M.

Supply and loss mechanisms of Ba dispenser cathodes
pp. 22-30(9)
Authors: Gartner G.; Geittner P.; Raasch D.; Wiechert D.U.

Emission and life characteristics of thin film top-layer scandate cathode and diffusion of Sc₂O₃ and W
pp. 31-38(8)
Authors: Uda E.; Nakamura O.; Matsumoto S.; Higuchi T.

The metallurgical properties of tungsten-iridium cathodes
pp. 39-46(8)
Authors: Vancil B.K.; Mueller R.A.; Steele E.R.; Ohlinger W.L.; Wintucky E.G.

An analysis of the surface of the Ni-W layer of a tungsten film coating cathode
pp. 47-50(4)
Authors: Ohira T.; Teramoto H.; Saito M.; Shinjo T.

Pore geometry of dispenser cathode surface vs. emission characteristics, and Ba recovery characteristics after ion bombardment
pp. 51-61(11)
Authors: Higuchi T.; Nakamura O.; Matsumoto S.; Uda E.

Investigation of pulsed laser depositing Sc-coated cathode
pp. 62-68(7)
Authors: Wang Y.; Pan T.

Quantitative LEIS analysis of thermionic dispenser cathodes
pp. 69-74(6)
Authors: Cortenraad R.; Denier van der Gon A.W.; Brongersma H.H.; Gartner G.; Manenschijn A.

Triservice/NASA cathode life test facility
pp. 75-78(4)
Authors: Windes D.; Dutkowski J.; Kaiser R.; Justice R.

Processing and performance of a novel cathode material
pp. 79-83(5)
Authors: Hodgson S.N.B.; Baker A.P.; Goodhand C.J.; van der Heide P.A.M.; Lee T.; Ray A.K.; Al-Ajili A.

Performance of a high-power klystron using a BI cathode in the KEK electron linac
pp. 84-88(5)
Authors: Fukuda S.; Hayashi K.; Maeda S.; Michizono S.; Saito Y.

Application of M-type cathodes to high-power cw klystrons
pp. 89-96(8)
Authors: Isagawa S.; Higuchi T.; Kobayashi K.; Miyake S.; Ohya K.; Yoshida M.

Measurement of work function change with surface segregation of substrate element on a deposited film
pp. 97-100(4)
Authors: Yoshitake M.; Yoshihara K.

Thermal electron emission from saline hydrides deposited on a metal surface
pp. 101-104(4)
Authors: Kawano H.; Serizawa N.; Tanaka A.; Zhu Y.

Work function of refractory metals and its dependence upon working conditions
pp. 105-108(4)
Authors: Kawano H.; Takahashi T.; Tagashira Y.; Mine H.; Moriyama M.

Life estimation of Ir-coated dispenser cathodes and heaters for cathode ray tubes
pp. 109-116(8)
Authors: Higuchi T.; Matsumoto S.; Koyama K.; Hara A.; Hamamoto H.

Advances in Mo-RE₂O₃ thermionic cathode materials
pp. 117-119(3)
Authors: Zhang J.; Nie Z.; Zhou M.; Wang J.; Liu D.; Yao C.; Zuo T.

Life test evaluation of 411M cathode for highly reliable satellite TWTs
pp. 120-125(6)
Authors: Chiba A.; Akiyama Y.

The use of internal field emission to inject electronic charge carriers into the conduction band of diamond films: a review
pp. 126-133(8)
Authors: Cutler P.H.; Miskovsky N.M.; Lerner P.B.; Chung M.S.

Electron emission characteristics of solidified gold alloy liquid metal ion sources
pp. 134-137(4)
Authors: Knapp W.; Bischoff L.; Teichert J.

Carrier concentration-dependence of field emission from semiconductors
pp. 138-142(5)
Authors: Chung M.S.; Yoon B.-G.; Park J.M.; Ha K.-Y.

Construction of a low-temperature gun and high-resolution field emission spectra from a Nb superconductor
pp. 143-147(5)
Authors: Oshima C.; Fujii H.; Yamashita T.; Uchiyama S.; Yamada M.; Nagaoka K.; Sakurai T.

Electron emission microscope for use in electron emission sites observations
pp. 148-151(4)
Authors: Kobayashi S.; Mizusawa T.; Shirai K.; Saito Y.; Ogiwara N.; Latham R.V.

Field emission properties of silicon carbide and diamond-like carbon (DLC) films made by chemical vapour deposition techniques
pp. 152-157(6)
Authors: Kleps I.; Nicolaescu D.; Stamatin I.; Correia A.; Gil A.; Zlatkin A.

Microscopical analysis of structure and work function of Ba-covered Si(111)-(7x7) surface
pp. 158-161(4)
Authors: Komai M.; Sasaki M.; Ozawa R.; Yamamoto S.

Field emission from flat metal surfaces covered with Ba atoms
pp. 162-168(7)
Authors: Ozawa R.; Kaykham K.; Hiraishi A.; Suzuki Y.; Mori N.; Yaguchi T.; Itoh J.; Yamamoto S.

Emission microscope observation of FEAs
pp. 169-171(3)
Authors: Nakane H.; Yamane K.; Muto Y.; Kawata S.; Adachi H.

Improvement of electron emission characteristics of Si field emitter arrays by surface modification
pp. 172-176(5)
Authors: Ehara K.; Kanemaru S.; Matsukawa T.; Itoh J.

Emission characteristics of niobium nitride field emitters
pp. 177-181(5)
Authors: Saito Y.; Kawata S.; Nakane H.; Adachi H.

Dependence of emission characteristics of Spindt-type field emitters on cathode material
pp. 182-186(5)
Authors: Nagao M.; Utsumi K.; Gotoh Y.; Tsuji H.; Ishikawa J.; Nakatani T.; Sakashita T.; Betsui K.

A field emitter array monolithically integrated with a thin-film transistor on glass for display applications
pp. 187-192(6)
Authors: Gamo H.; Kanemaru S.; Itoh J.

Fabrication of boron nitride planar field emitters
pp. 193-197(5)
Authors: Yokota Y.; Tagawa S.; Sugino T.

Stable emission from a MOSFET-structured emitter tip in poor vacuum
pp. 198-202(5)
Authors: Kanemaru S.; Hirano T.; Honda K.; Itoh J.

Fabrication and characterization of a nanogap edge emitter with a silicon-on-insulator wafer
pp. 203-208(6)
Authors: Fujii H.; Kanemaru S.; Hiroshima H.; Gorwadkar S.M.; Matsukawa T.; Itoh J.

Studies of full color field emission display core technologies with the electrical and structural analysis
pp. 209-216(8)
Authors: Kim J.M.; Lee H.W.; Choi Y.S.; Jung J.E.; Lee N.S.; Jin Y.Y.; Park N.S.

Modeling of a miniaturized mass spectrometer with field emission electron source
pp. 217-223(7)
Authors: Nicolaescu D.; Filip V.; Itoh J.; Okuyama F.

Field emission silicon surge absorber
pp. 224-229(6)
Authors: Kasai Y.; Maruyama M.; Misawa M.; Yonekubo S.

Design and performance of traveling-wave tubes using field emitter array cathodes
pp. 230-233(4)
Authors: Makishima H.; Miyano S.; Imura H.; Matsuoka J.; Takemura H.; Okamoto A.

Application of the field emitter array to the vacuum measurements
pp. 234-238(5)
Authors: Ogiwara N.; Suganuma K.; Miyo Y.; Kobayashi S.; Saito Y.

Modeling of a pressure sensor based on an array of wedge emitters
pp. 239-244(6)
Authors: Marques M.I.; Serena P.A.; Nicolaescu D.; Itoh J.

Formation of backcontacts on diamond electron emitters
pp. 245-250(6)
Authors: Yamada T.; Sawabe A.; Koizumi S.; Itoh J.; Okano K.

Beam characteristics of a high-gain avalanche rushing amorphous photoconductor field-emitter image sensor
pp. 251-256(6)
Authors: Nanba M.; Yamagishi T.; Okazaki S.; Tanioka K.; Takayama K.; Tanaka M.; Itoh S.

Fabrication and analysis of the nanometer-sized structure of silicon by ultrahigh vacuum field emission transmission electron microscope
pp. 257-261(5)
Authors: Takeguchi M.; Tanaka M.; Furuya K.

Field emission from tetrahedrally bonded amorphous carbon
pp. 262-268(7)
Author: Milne W.I.

Properties of nitrogen-doped diamond-like-carbon films prepared by a laser ablation
pp. 269-273(5)
Authors: Hong Y.K.; Kim J.-J.; Kim J.S.; Jeon I.C.; Park C.; Kim J.K.

Characterization of electron emission from N-doped diamond using simultaneous field emission and photoemission technique
pp. 274-279(6)
Authors: Okano K.; Yamada T.; Sawabe A.; Koizumi S.; Matsuda R.; Bandis C.; Chang W.; Pate B.B.

Efficient electron emitter utilizing boron-doped diamond tips with sp² content
pp. 280-286(7)
Authors: Wisitsora-at A.; Kang W.P.; Davidson J.L.; Li Q.; Xu J.F.; Kerns D.V.

Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy
pp. 287-294(8)
Authors: Nemanich R.J.; English S.L.; Hartman J.D.; Sowers A.T.; Ward B.L.; Ade H.; Davis R.F.

Field emission characteristics of phosphorus-doped homoepitaxial diamond films
pp. 295-298(4)
Authors: Kimura C.; Kuriyama K.; Koizumi S.; Kamo M.; Sugino T.

Field emission from electron-beam-irradiated bulk diamond
pp. 299-304(6)
Authors: Taniguchi J.; Komuro M.; Hiroshima H.; Miyamoto I.

Field emission from carbon nanotubes and its application to cathode ray tube lighting elements
pp. 305-311(7)
Authors: Saito Y.; Hamaguchi K.; Mizushima R.; Uemura S.; Nagasako T.; Yotani J.; Shimojo T.

Field emission energy distributions from individual multiwalled carbon nanotubes
pp. 312-327(16)
Authors: Fransen M.J.; van Rooy T.L.; Kruit P.

Field emission from gated diamond arrays
pp. 328-333(6)
Authors: Mueller W.; Dewan H.S.; Chen H.; Mearini G.T.; Krainsky I.L.

Properties and stability of single-atom field emitters
pp. 334-340(7)
Authors: Yu M.L.; Chang T.H.P.

Cold emission characterization using secondary electron emission spectroscopy
pp. 341-346(6)
Authors: Yater J.E.; Shih A.; Abrams R.

Electron field emission from semiconductors through oxide layers: possible transport effects
pp. 347-356(10)
Authors: Filip V.; Nicolaescu D.; Okuyama F.; Plavitu C.N.; Itoh J.

Brightness measurements of a ZrO/W Schottky electron emitter in a transmission electron microscope
pp. 357-362(6)
Authors: Fransen M.J.; Overwijk M.H.F.; Kruit P.

Measurement of the local work function of dispenser cathodes using an SPM technique
pp. 363-370(8)
Authors: Ingram P.K.; Wilson G.J.; Devonshire R.

Quasiballistic electron emission from porous silicon diodes
pp. 371-376(6)
Authors: Koshida N.; Sheng X.; Komoda T.

Theoretical approach to liquid-metal field-emission electron sources
pp. 377-381(5)
Authors: Gotoh Y.; Tsuji H.; Ishikawa J.

Tungsten Schottky emitters with reservoirs of metal oxide or nitride
pp. 382-386(5)
Authors: Nishiyama H.; Ohshima T.; Shinada H.

Control of emission current from a Li/W<111> field emitter by sequential deposition of Li
pp. 387-390(4)
Authors: Hata K.; Akahori H.; Takemoto T.; Saito Y.; Ohshita A.

Acceleration of electrons in thin metal films by strong ultra-short laser pulses
pp. 391-397(7)
Authors: Lugovskoy A.V.; Zinoviev A.V.; Usmanov T.

Atomic level analysis of electron emitter surfaces by the scanning atom probe
pp. 398-407(10)
Authors: Nishikawa O.; Maeda K.; Ohtani Y.; Watanabe M.; Tanaka K.; Sekine T.; Iwatsuki M.; Aoki S.; Itoh J.; Yamanaka K.

Atomic arrangement on ZrO/W(100) cathode surface-Models for LEED intensity vs. voltage analysis
pp. 408-411(4)
Authors: Kawata S.; Oka M.; Takami T.; Mizuno S.; Nakane H.; Adachi H.