Annealing effects on irradiated n+n silicon detectors

Authors: Allport P.P.; Booth P.S.L.; Green C.; Greenall A.; Jackson J.N.; Jones T.J.; Richardson J.D.; Mart i Garca S.; Smith N.A.; Turner P.R.; Wormald M.P.

Source: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 420, Number 3, 11 January 1999 , pp. 473-480(8)

Publisher: Elsevier

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Language: English

Document Type: Research article

DOI: http://dx.doi.org/10.1016/S0168-9002(98)01202-9

Affiliations: 1: University of Liverpool, Oxford Street, Liverpool L69 7ZE, UK

Publication date: 1999-01-11

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