Microelectronic Engineering

Editorial board
pp. ii-ii(1)

Wavelet analysis of directional variations of plasma etch profile
pp. 1-6(6)
Authors: Choi S.R.; Kim B.; Kim B.S.; Lee K.K.

Control of plasma equipment by regulating radio frequency impedance matching
pp. 7-14(8)
Authors: Kim B.; Park J.-H.; Kim B.S.

Effect of tip length and normal and lateral contact stiffness on the flexural vibration responses of atomic force microscope cantilevers
pp. 15-20(6)
Authors: Wu T.-S.; Chang W.-J.; Hsu J.-C.

Plasma cleaning technology in the dual damascene process
pp. 21-27(7)
Author: Kang T.-K.

The Effect of nitrogen partial pressure on Zr-Si-N diffusion barrier
pp. 28-33(6)
Authors: Song Z.X.; Xu K.W.; Chen H.

Rigorous electromagnetic modeling of near-field phase-shifting contact lithography
pp. 34-53(20)
Authors: Wang F.; Horn M.W.; Lakhtakia A.

Etching mechanisms of (Ba,Sr)TiO₃ thin films in CF₄/Ar inductively coupled plasma
pp. 54-62(9)
Authors: Efremov A.M.; Kim D.-P.; Kim K.-T.; Kim C.-I.

Processing chemically amplified resists on advanced photomasks using a thermal array
pp. 63-68(6)
Authors: Schaper C.D.; El-Awady K.; Kailath T.; Tay A.; Lee L.L.; Ho W.-K.; Fuller S.E.

High temperature stability of Zr-Si-N diffusion barrier in Cu/Si contact system
pp. 69-75(7)
Authors: Wang Y.; Zhu C.; Song Z.; Li Y.

Effects of mechanical stress at no current stressed area on electromigration reliability of multilevel interconnects
pp. 76-89(14)
Authors: Park Y.-B.; Jeon I.-S.

The combinatorial effect of complexing agent and inhibitor on chemical-mechanical planarization of copper
pp. 90-97(8)
Authors: Du T.; Luo Y.; Desai V.

In-plane reactive ion etched fibre grooves for optical integration and coupling
pp. 98-103(6)
Authors: Chaffey J.; Austin M.; Switala I.

Thermal stability study of NiSi and NiSi₂ thin films
pp. 104-111(8)
Authors: Zhao F.F.; Zheng J.Z.; Shen Z.X.; Osipowicz T.; Gao W.Z.; Chan L.H.

High-voltage power integrated circuit technology using bulk-silicon for plasma display panels data driver IC
pp. 112-118(7)
Authors: Sun W.; Wu J.; Lu S.; Yi Y.; Shi L.