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Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia

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Keywords: CVD; Electrical properties; Plasma deposition; Silicon nitride; Surface stress

Document Type: Research Article

DOI: http://dx.doi.org/10.1016/S0042-207X(03)00002-2

Affiliations: CEETEPS, , SP, FATEC, Brazil

Publication date: July 25, 2003

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