Admittance spectroscopy of metal-semiconductor interfaces prepared by ionized cluster beam technique

Authors: Korosak D.; Cvikl B.

Source: Vacuum, Volume 71, Number 1, 9 May 2003 , pp. 123-128(6)

Publisher: Elsevier

Keywords: Admittance; Spectroscopy; Schottky barrier; Metal-semiconductor interface; Disorder; Tunnelling

Language: English

Document Type: Research article

DOI: http://dx.doi.org/10.1016/S0042-207X(02)00725-X

Affiliations: 1: University of Maribor, Faculty of Civil Engineering, Smetanova 17, 2000 , Maribor, Slovenia

Publication date: 2003-05-09

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• In this Subject: Mechanics
• By this author: Korosak D. ;  Cvikl B.

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