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Publisher: Elsevier

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Volume 70, Number 2, 10 March 2003

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Ion 2002
pp. 73-74(2)
Authors: Michalak, L.; Maczka, D.; Zuk, J.

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Track formation in germanium crystals irradiated with superhigh-energy ions
pp. 75-79(5)
Authors: Komarov, F.F.; Gaiduk, P.I.; Vlasukova, L.A.; Didyk, A.J.; Yuvchenko, V.N.

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High-quality p-n junction fabrication by ion implantation using the LPCVD amorphous silicon films
pp. 81-85(5)
Authors: Jaroszewicz, B.; Budzynski, T.; Panas, A.; Kociubinski, A.; Slysz, W.; Jung, W.; Jakiela, R.; Barcz, A.; Marczewski, J.; Grabiec, P.

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Titanium surface after neutralized ion beam irradiation
pp. 87-91(5)
Authors: Wilk, J.; Kowalski, Z.W.

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Resistance to high-temperature oxidation in B+Si implanted TiN coatings on steel
pp. 93-96(4)
Authors: Werner, Z.; Piekoszewski, J.; Grotzschel, R.; Richter, E.; Szymczyk, W.

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Diffusion and activation of Si implanted into GaAs
pp. 97-101(5)
Authors: Jakiela, R.; Barcz, A.

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GaAs on Si: towards a low-temperature ''smart-cut'' technology
pp. 103-107(5)
Authors: Gawlik, G.; Jagielski, J.; Piatkowski, B.

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Influence of anodic oxidation on the bioactivity and corrosion resistance of phosphorus-ion implanted titanium
pp. 109-113(5)
Authors: Krupa, D.; Baszkiewicz, J.; Sobczak, J.W.; Bilinski, A.; Barcz, A.; Rajchel, B.

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X-Ray studies of AlxGA1-xAs Implanted with 1.5MeV As ions
pp. 115-121(7)
Authors: Wierzchowski, W.; Wieteska, K.; Graeff, W.; Turos, A.; Grotzschel, R.

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High temperature behaviour of fission product analogues implanted into nuclear ceramics
pp. 123-129(7)
Authors: Gentils, A.; Thome, L.; Jagielski, J.; Enescu, S.E.; Garrido, F.; Beauvy, M.; Blaise, G.

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Thin film sputtered silicon for silicon wafer bonding applications
pp. 131-140(10)
Authors: Hurley, R.E.; Gamble, H.S.

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Formation of CxNy films by high dose nitrogen implantation in the layered structures
pp. 141-145(5)
Authors: Komarov, A.F.; Komarov, F.F.; Mironov, A.M.; Nikiforenko, N.N.; Maczka, D.; Kamyshan, A.F.

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Effects of high dose nitrogen implantation into aluminum
pp. 147-152(6)
Authors: Jagielski, J.; Piatkowska, A.; Aubert, P.; Legrand-Buscema, C.; Paven, C.L.; Gawlik, G.; Piekoszewski, J.; Werner, Z.

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Influence of amorphization-recrystallization processes on distribution of selenium and oxygen atoms implanted in silicon
pp. 153-156(4)
Authors: Tishkovsky, E.; Feklistov, K.; Taskin, A.; Zatolokin, M.

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Electron signal acquisition in HPSEM
pp. 157-162(6)
Author: Slowko, W.

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Influence of the Ca- and P-enriched oxide layers produced on titanium and the Ti6Al4V alloy by the IBAD method upon the corrosion resistance of these materials
pp. 163-167(5)
Authors: Baszkiewicz, J.; Krupa, D.; Kozubowski, J.A.; Rajchel, B.; Mitura, M.; Barcz, A.; Slosarczyk, A.; Paszkiewicz, Z.; Puff, Z.

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The long-range influence of the ion and photon irradiation on the mechanical properties and on the composition of the permalloy-79
pp. 169-173(5)
Authors: Tetelbaum, D.I.; Azov, A.Y.; Kuril'chik, E.V.; Bayankin, V.Y.; Gilmutdinov, F.Z.; Mendeleva, Y.A.

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High-spin paramagnetic centers of irradiated elemental semiconductors
pp. 175-179(5)
Authors: Fedaruk, R.; Stelmach, C.; Yearchuck, D.; Zhukovski, P.; Partyka, J.; Wegierek, P.

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Relations between deposition conditions, microstructure and mechanical properties of amorphous carbon-metal films
pp. 181-185(5)
Authors: Uglova, V.V.; Anishchik, V.M.; Pauleau, Y.; Kuleshov, A.K.; Thiery, F.; Pelletier, J.; Dub, S.N.; Rusalsky, D.P.

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The effect of diffusion treatments in a glow-discharge plasma in Ar+O2 atmosphere on friction and wear of Ti-6Al-4V alloy
pp. 187-191(5)
Authors: Dudek, M.; Fouvry, S.; Wendler, B.; Kapsa, P.; Liskiewicz, T.

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Study of the recombination properties of thermostable radiation defects in p-n structures manufactured in high resistivity neutron transmutation-doped silicon
pp. 193-196(4)
Authors: Korshunov, F.P.; Zhdanovich, N.E.; Marchenko, I.G.; Karas, V.I.; Troschinskii, V.T.

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Investigation of radiation-induced defects in the electron irradiated power transistor structures
pp. 197-200(4)
Authors: Korshunov, F.P.; Bogatyrev, Y.V.; Lastovsky, S.B.; Kulgachev, V.I.; Anufriev, L.P.; Rubtsevich, I.I.; Golubev, N.F.

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Ion beam modification of surface properties of polyethylene
pp. 201-206(6)
Authors: Turos, A.; Jagielski, J.; Piatkowska, A.; Bielinski, D.; Slusarski, L.; Madi, N.K.

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Determination of hydrogen in GaMnN and GaMnMgN by nuclear reaction analysis
pp. 207-213(7)
Authors: Podsiadlo, S.; Szyszko, T.; Warso, G.; Turos, A.; Ratajczak, R.; Kowalczyk, A.; Gebicki, W.; Strzalkowski, I.; Grambole, D.; Hermann, F.

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Ion beam assisted deposition of metal layers using a novel one beam system
pp. 215-220(6)
Authors: Komarov, F.F.; Kamarou, A.A.; Zukowski, P.; Karwat, C.; Sielanko, J.; Kozak, C.M.; Kiszczak, K.

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Electrical and mechanical properties of surface layers deposited on copper by the novel IBAD method
pp. 221-225(5)
Authors: Karwat, C.; Komarov, F.F.; Kozak, C.; Lozak, M.; Romaniuk, F.; Zukowski, P.

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Mechanical and thermal properties of gamma-ray irradiated polyethylene blends
pp. 227-236(10)
Authors: Al-Ali, M.; Madi, N.K.; Al Thani, N.J.; El-Muraikhi, M.; Turos, A.

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Photoelectric work function determination for the nanostructural carbonaceous films
pp. 237-241(5)
Authors: Czerwosz, E.; Dluzewski, P.; Kozlowski, M.; Nowakowski, R.; Stacewicz, T.

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Stress development during thin film growth and its modification under ion irradiation
pp. 243-248(6)
Authors: Pienkos, T.; Gladyszewski, L.; Proszynski, A.; Chocyk, D.; Gladyszewski, G.; Martin, F.; Jaouen, C.; Drouet, M.; Lamongie, B.

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Reactive ion etching of novel materials-GaN and SiC
pp. 249-254(6)
Authors: Szczesny, A.; Sniecikowski, P.; Szmidt, J.; Werbowy, A.

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Fractal analysis of ion-sputtered stainless steel surface
pp. 255-261(7)
Authors: Przybylski, G.; Martan, J.; Kowalski, Z.W.

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New types of multi-component hard coatings deposited by ARC PVD on steel pre-treated by pulsed plasma beams
pp. 263-267(5)
Authors: Werner, Z.; Stanislawski, J.; Piekoszewski, J.; Levashov, E.A.; Szymczyk, W.

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Compressive plasma flows interaction with steel surface: structure and mechanical properties of modified layer
pp. 269-274(6)
Authors: Anishchik, V.M.; Uglov, V.V.; Astashynski, V.V.; Astashynski, V.M.; Ananin, S.I.; Kostyukevich, E.A.; Kuzmitski, A.M.; Kvasov, N.T.; Danilyuk, A.L.; Rumianceva, I.N.

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Ti and Fe cathode sputtering by the glow discharge plasma
pp. 275-284(10)
Authors: Wronski, Z.; Sielanko, J.; Herec, J.

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Phase changes in steels irradiated with intense pulsed plasma beams
pp. 285-291(7)
Authors: Sartowska, B.; Piekoszewski, J.; Walis, L.; Kopcewicz, M.; Werner, Z.; Stanislawski, J.; Kalinowska, J.; Prokert, F.

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Growth of nitrided layer after cathode sputtering
pp. 293-297(5)
Authors: Baranowska, J.; Szczecinski, K.; Wysiecki, M.

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Field emission from sintered CrSi2
pp. 299-302(4)
Authors: Czarczynski, W.; Dobrzanski, B.; Znamirowski, Z.; Kozlowski, J.

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Snow plow model of IPD discharge
pp. 303-306(4)
Authors: Rabinski, M.; Zdunek, K.

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Brazing of alumina ceramics modified by pulsed plasma beams combined with arc PVD treatment
pp. 307-312(6)
Authors: Piekoszewski, J.; Krajewski, A.; Prokert, F.; Senkara, J.; Stanislawski, J.; Walis, L.; Werner, Z.; Wlosinski, W.

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RBS and ERD study of epitaxial RuO2 films deposited on different single crystal substrates
pp. 313-317(5)
Authors: Machajdk, D.; Kobzev, A.P.; Frohlich, K.; Cambel, V.

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Formation of polymeric layer during silicon etching in CF2Cl2 plasma
pp. 319-322(4)
Authors: Grigonis, A.; Knizikevicius, R.; Rutkuniene, Z.; Tribandis, D.

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PECVD formation of ultrathin silicon nitride layers for CMOS technology
pp. 323-329(7)
Authors: Beck, R.B.; Giedz, M.; Wojtkiewicz, A.; Kudla, A.; Jakubowski, A.

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Mechanisms of forming the Cr-N composite in the unsteady-state stage of ion beam-assisted deposition process
pp. 331-337(7)
Authors: Bendikov, V.I.; Guglya, A.G.; Marchenko, I.G.; Malykhin, D.G.; Neklyudov, I.M.

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High-current and broad-beam ion implanter
pp. 353-358(6)
Authors: Guglya, A.; Drakin, V.; Lymar, A.; Stervoedov, N.

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Energy loss effective charge for slow ions in electron gas
pp. 359-364(6)
Authors: Moneta, M.; Czerbniak, J.

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Accelerator mass spectrometry-an overview
pp. 365-372(8)
Authors: Hellborg, R.; Faarinen, M.; Kiisk, M.; Magnusson, C.E.; Persson, P.; Skog, G.; Stenstrom, K.

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The sputtering of light target material during implantation of heavy ions
pp. 381-384(4)
Authors: Sielanko, J.; Filiks, J.; Herec, J.

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Core-shell morphology of welding fume micro- and nanoparticles
pp. 385-389(5)
Authors: Konarski, P.; Iwanejko, I.; Cwil, M.

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Field electron emission from laser the engraved surface
pp. 397-402(6)
Authors: Znamirowski, Z.; Czarczynski, W.; Pawlowski, L.; Le Maguer, A.

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Formation of water dimers in expanding air flows
pp. 403-409(7)
Authors: Ptasinska, S.; Dabek, J.; Michalak, L.

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Influence of nitrogen ion beam assisted deposition of Cr on tribological properties of tool steel NW1
pp. 411-416(6)
Authors: Budzynski, P.; Tarkowski, P.; Zukowski, P.; Kiszczak, K.; Kasietczuk, W.

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Influence of nitrogen and titanium implantation on the tribological properties of steel
pp. 417-421(5)
Authors: Budzynski, P.; Youssef, A.A.; Kamienska, B.

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Ion beam analysis methods in the studies of plasma facing materials in controlled fusion devices
pp. 423-428(6)
Authors: Rubel, M.; Wienhold, P.; Hildebrandt, D.

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Electron attachment to simple organic acids
pp. 429-433(5)
Authors: Pelc, A.; Sailer, W.; Scheier, P.; Mason, N.J.; Illenberger, E.; Mark, T.D.

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Vacuum selenization of metallic multilayers for CIS solar cells
pp. 435-438(4)
Authors: Pisarkiewicz, T.; Jankowski, H.

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Influence of potassium chloride on the MALDI detection process
pp. 439-445(7)
Authors: Ptasinska, S.; Bajuk, A.; Michalak, L.

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An ion source for solid elements with mechanical sputtering
pp. 447-450(4)
Authors: Meldizon, J.; Drozdziel, A.; Latuszynski, A.; Prucnal, S.; Pyszniak, K.; Maczka, D.

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Plasma ion source with hollow cathode
pp. 451-455(5)
Authors: Latuszynski, A.; Drozdziel, A.; Pyszniak, K.; Dupak, J.; Maczka, D.; Meldizon, J.

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RBS and optical studies of ion-implanted amorphous silicon carbide layers
pp. 457-465(9)
Authors: Romanek, J.; Kobzev, A.P.; Kulik, M.; Tsvetkova, T.; Zuk, J.

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Structural and optical properties modification of a-SiC:H by Ga+ ion implantation
pp. 467-470(4)
Authors: Tsvetkova, T.; Angelov, O.; Sendova-Vassileva, M.; Dimova-Malinovska, D.; Bischoff, L.; Adriaenssens, G.J.; Grudzinski, W.; Zuk, J.

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Ion implantation induced surface morphology changes in thin As3Se2 films
pp. 471-475(5)
Authors: Tsvetkova, T.; Balabanov, S.; Skordeva, E.; Kitova, S.; Sielanko, J.; Maczka, D.; Zuk, J.

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