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Publisher: Elsevier

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Volume 69, Number 1, 24 December 2002

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Editorial
pp. 1-1(1)
Authors: Karpuzov, D.; Guerassimov, N.

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Masked ion damage and implantation for device fabrication
pp. 11-15(5)
Authors: Blamire, M.G.; Kang, D.; Burnell, G.; Peng, N.H.; Webb, R.; Jeynes, C.; Yun, J.H.; Moon, S.H.; Oh, B.

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Numerical modelling of gas discharge plasmas for various applications
pp. 37-52(16)
Authors: Bogaerts, A.; Gijbels, R.

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The measurement and control of ionization of the depositing flux during thin film growth
pp. 53-62(10)
Authors: Barber, Z.H.; Christou, C.; Chiu, K.; Garg, A.

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New frontiers in X-ray photoelectron spectroscopy
pp. 63-71(9)
Authors: McIntyre, N.S.; Davidson, R.D.; Kim, G.; Francis, J.T.

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Optical pattern formation in a-SiC:H films by Ga+ ion implantation
pp. 73-77(5)
Authors: Bischoff, L.; Teichert, J.; Kitova, S.; Tsvetkova, T.

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Electron irradiation of a-Si:H films prepared from hydrogen-diluted silane
pp. 79-82(4)
Authors: Danesh, P.; Pantchev, B.; Savatinova, I.; Liarokapis, E.; Kaschieva, S.; Belov, A.G.

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Effect of ion implantation on the structural properties of a-Si:H films
pp. 83-86(4)
Authors: Danesh, P.; Pantchev, B.; Savatinova, I.; Liarokapis, E.; Schmidt, B.

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Enhanced thermal stability of TA-based thin diffusion barriers by ion implantation
pp. 91-95(5)
Authors: Peikert, M.; Wieser, E.; Reuter, H.; Wenzel, C.

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Sensitivity of hydrogen plasma-treated SiO2/Si structures to high-energy electron irradiation
pp. 103-106(4)
Authors: Alexandrova, S.; Kaschieva, S.; Halova, E.; Valcheva, E.; Szekeres, A.

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Transport properties of selenium implanted polymer composites
pp. 113-118(6)
Authors: Krezhov, K.; Velitchkova, K.; Balabanov, S.

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Microstructural changes and optical properties of laser annealed bismuth-implanted silicon
pp. 119-124(6)
Authors: Pavlov, L.I.; Angelov, C.V.; Mikli, V.; Amov, B.G.; Djakov, A.E.

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Chromatic monitoring of plasma jets used for plasma spraying
pp. 125-128(4)
Authors: Russell, P.C.; Djakov, B.E.; Enikov, R.; Oliver, D.H.; Jones, G.R.

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Plasma jet formation at the electrodes of pulsed arcs
pp. 129-132(4)
Authors: Djakov, B.E.; Hermoch, V.

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Homogeneity of metal plasma immersion ion implantation and deposition
pp. 133-137(5)
Authors: Huber, P.; Manova, D.; Mandl, S.; Rauschenbach, B.

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Plasma diagnostic of an RF magnetron Ar/N2 discharge
pp. 139-145(7)
Authors: Fritsche, B.; Chevolleau, T.; Kourtev, J.; Kolitsch, A.; Moller, W.

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Probe diagnostics of waveguided discharges in an external magnetic field
pp. 147-152(6)
Authors: Djermanova, N.; Kiss'ovski, Z.; Kolev, S.; Schluter, H.; Shivarova, A.; Tarnev, K.

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Filamentation regime of travelling-wave-produced plasmas
pp. 153-158(6)
Authors: Lishev, S.; Marinova, L.; Schluter, H.; Shivarova, A.

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Diffusion model of the transport of sputtered metal atoms in a cylindrical vessel
pp. 165-169(5)
Authors: Rusinov, I.M.; Blagoev, A.B.; Dimitrov, V.I.

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Kinetics of metastable atoms and molecules in N2 microwave discharges
pp. 171-176(6)
Authors: Guerra, V.; Tatarova, E.; Ferreira, C.M.

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Nitrogen dissociation in N2-Ar microwave plasmas
pp. 177-181(5)
Authors: Henriques, J.; Tatarova, E.; Guerra, V.; Ferreira, C.M.

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Wave driven molecular discharges as sources of active species
pp. 183-187(5)
Authors: Ferreira, C.M.; Tatarova, E.; Dias, F.M.; Guerra, V.; Henriques, J.; Pinheiro, M.

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Emission spectroscopy of a surface wave sustained N2-H2 discharge
pp. 189-193(5)
Authors: Tatarova, E.; Dias, F.M.; van Kuijk, H.; Ferreira, C.M.

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RF hydrogen-plasma-induced defects in p-Si/SiO2 structures with submicron thermally grown oxides
pp. 195-200(6)
Authors: Simeonov, S.; Yourukov, I.; Szekeres, A.; Kafedjiiska, E.

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Optogalvanic effect sign change of the 667.8nm He line in a hollow cathode discharge plasma
pp. 201-205(5)
Authors: Gateva, S.; Janossy, M.; Cartaleva, S.

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Iron silicide formed in a-Si:Fe thin films by magnetron co-sputtering and ion implantation
pp. 221-225(5)
Authors: Nikolaeva, M.; Sendova-Vassileva, M.; Dimova-Malinovska, D.; Karpuzov, D.; Pivin, J.C.; Beshkov, G.

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Transport mechanisms and energy band diagram in ZnO/porous Si light-emitting diodes
pp. 227-231(5)
Authors: Dimova-Malinovska, D.; Nikolaeva, M.

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Optical properties and room-temperature photoluminescence from Tb3+ ions in a-Si1-xCx:H thin films
pp. 233-236(4)
Authors: Nikolaeva, M.; Sendova-Vassileva, M.; Dimova-Malinovska, D.; Pivin, J.C.

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The influence of process parameters and annealing temperature on the physical properties of sputtered NiO thin films
pp. 237-242(6)
Authors: Hotovy, I.; Huran, J.; Spiess, L.; Liday, J.; Sitter, H.; Hasck, S.

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YBCO/LSMO and LSMO/YBCO double-layer deposition by off-axis magnetron sputtering and strain effects
pp. 243-247(5)
Authors: Donchev, T.; Tsaneva, V.; Nurgaliev, T.; Gravier, L.; Ansermet, J.P.; Petrov, I.; Petrova, V.; Matz, V.W.; Groetzschel, R.; Pignard, S.; Vincent, H.

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Structural and magnetotransport properties of magnetron sputtered La0.7Sr0.3MnO3 thin films
pp. 249-253(5)
Authors: Vlakhov, E.S.; Donchev, T.I.; Spasov, A.Y.; Dorr, K.; Nenkov, K.A.; Handstein, A.; Pignard, S.; Vincent, H.

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Optical emission spectroscopy and Langmuir probe characterisation of the plasma during high-pressure sputter deposition of high-Tc superconducting YBa2Cu3O7-x thin films
pp. 261-266(6)
Authors: Tsaneva, V.N.; Popov, T.K.; Dias, F.M.; Tarte, E.J.; Blamire, M.G.; Evetts, J.E.; Barber, Z.H.

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Characterisation of the optical emission of the plasma plume during pulsed laser deposition of superconducting MgB2 thin films
pp. 267-271(5)
Authors: Tsaneva, V.N.; Stelmashenko, N.A.; Martev, I.N.; Barber, Z.H.; Blamire, M.G.

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Er:Y2O3 thin films grown by pulsed laser deposition
pp. 273-276(4)
Authors: Dikovska, A.O.; Atanasov, P.A.; Tomov, R.I.; Tonchev, S.H.; Sapundjiev, D.T.

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The influence of the CeO2 buffered r-sapphire microstructure on the quality of the YBCO films determined by microwave measurements
pp. 277-282(6)
Authors: Gazi, S.; Spankova, M.; Chromik, S.; Vavra, I.; Strbk, V.; Gierlowski, P.; Lewandowski, S.J.; Benacka, S.

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Patterning of a micromechanical coplanar waveguide using a dry etching technique
pp. 283-287(5)
Authors: Hasck, S.; Mozolova, Z.; Lalinsky, T.; Tomaska, M.; Kostic, I.

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Elastic recoil detection analysis of ion-exchanged soda-lime glass substrates for a-Si:H devices
pp. 289-293(5)
Authors: Pantchev, B.; Danesh, P.; Kreissig, U.; Schmidt, B.

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Influence of primary beam profile on LEIS spectra
pp. 295-300(6)
Authors: Bundaleski, N.; Radovic, M.; Rakocevic, Z.

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IR and Raman absorption spectroscopic studies of APCVD, LPCVD and PECVD thin SiN films
pp. 301-305(5)
Authors: Beshkov, G.; Lei, S.; Lazarova, V.; Nedev, N.; Georgiev, S.S.

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Capabilities and limitations of Fourier transform laser microprobe mass spectrometry for molecular analysis of solids
pp. 307-313(7)
Authors: Ignatova, V.A.; van Vaeck, L.; Gijbels, R.; Adams, F.

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RBS and ion channelling study of YBCO/STO and YBCO/LSMO/STO structures. Oxygen content estimated by X-ray diffraction
pp. 315-319(5)
Authors: Grigorov, K.; Tsaneva, V.; Spasov, A.; Matz, W.; Groetzschel, R.; Reuther, H.

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Optical properties of SiO2 thin layers with Ag nanoparticles
pp. 321-325(5)
Authors: Sarov, Y.; Nikolaeva, M.; Sendova-Vassileva, M.; Malinovska, D.; Pivin, J.C.

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Preparation and properties of vacuum deposited AgBr thin films
pp. 327-331(5)
Authors: Georgieva, R.; Karashanova, D.; Starbov, N.

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Carbon Buckypaper field emission investigations
pp. 333-338(6)
Authors: Knapp, W.; Schleussner, D.

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CRT lighting element with carbon field emitters
pp. 339-344(6)
Authors: Knapp, W.; Schleussner, D.; Baturin, A.S.; Yeskin, I.N.; Sheshin, E.P.

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Superconducting properties of MgB2 thin films prepared by sequential deposition of boron and magnesium
pp. 351-354(4)
Authors: Chromik, S.; Benacka, S.; Gazi, S.; Strbk, V.; Oszi, Z.; Kostic, I.

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Optical study of ultrathin SiO2 grown on hydrogenated silicon
pp. 355-360(6)
Authors: Szekeres, A.; Paneva, A.; Alexandrova, S.; Lisovskyy, I.; Litovchenko, V.; Mazunov, D.

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Electrical characterization of sputtered Ge:Sb:Te films using impedance measurements
pp. 361-364(4)
Authors: Morales-Sanchez, E.; Prokhorov, E.F.; Mendoza-Galvan, A.; Gonzalez-Hernandez, J.

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Temperature dependence of holographic recording in 15nm As2S3 film
pp. 365-369(5)
Authors: Sainov, S.; Stoycheva-Topalova, R.

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Deposition, structure evolution and dielectric properties of BaTiO3 and BaxSr1-xTiO3 thin films prepared by the sol-gel method
pp. 371-377(7)
Authors: Vitanov, P.; Harizanova, A.; Ivanova, T.; Velkov, D.; Raytcheva, Z.

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Vacuum rapid thermal annealing of quartz resonators
pp. 379-383(5)
Authors: Lazarova, V.; Yordanov, T.; Spassov, L.; Beshkov, G.

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LPCVD-silicon oxynitride films: low-temperature annealing effects
pp. 385-389(5)
Authors: Alexandrova, S.; Szekeres, A.; Halova, E.; Modreanu, M.

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SHG and AFM study of PECVD a-Si:H films
pp. 391-394(4)
Authors: Alexandrova, S.; Danesh, P.; Maslyanitsyn, I.A.

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Photoinduced changes in the optical properties of obliquely deposited a-As2S3 thin films
pp. 395-398(4)
Authors: Dikova, J.; Sharlandjiev, P.; Gushterova, P.; Babeva, T.

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Optical characteristics of very thin films
pp. 399-403(5)
Authors: Sharlandjiev, P.; Gushterova, P.

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Thin films of cobalt oxides obtained by vacuum co-deposition of Co and TeO2
pp. 405-409(5)
Authors: Kitova, S.; Rashkova, V.; Konstantinov, I.

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Comparison of numerical algorithms for simulation of molecular beam epitaxy
pp. 411-417(7)
Authors: Vulkova, L.A.; Atanasov, I.S.; Yordanov, O.I.

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Influence of grain size on the optical conductivity of -FeSi2 layers
pp. 425-429(5)
Authors: Baleva, M.; Goranova, E.; Darakchieva, V.; Kossionides, S.; Kokkosis, M.; Jordanov, P.

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Ion acoustic microscope based on IMSA-100 focused ion beam system
pp. 431-435(5)
Authors: Akhmadaliev, C.; Bischoff, L.; Teichert, J.; Kazbekov, K.

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Preparation of YBCO resonators and their characterization in combination with the ferrite components
pp. 437-440(4)
Authors: Nurgaliev, T.; Miteva, S.; Donchev, T.; Spasov, A.; Dew-Hughes, D.; Edwards, D.

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An application of chromatic processing for interpreting data from a mass spectrometer
pp. 441-444(4)
Authors: Spencer, J.W.; Yuan, D.W.; Jones, G.R.

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Ion source with hot filament and magnetic field. Model-based anode current control
pp. 445-447(3)
Authors: Donkov, N.; Dinkov, Z.; Ivanov, K.

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Effect of rapid thermal annealing on the structure of ion beam synthesized -FeSi2
pp. 449-454(6)
Authors: Darakchieva, V.; Surtchev, M.; Goranova, E.; Baleva, M.

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Dose-dependent dynamics of nanocluster distribution in silicon implanted with Te+ and Pb+ ions: computer simulation and TEM study
pp. 455-460(6)
Authors: Bankov, P.; Kalitzova, M.; Karpuzov, D.; Zollo, G.; Vitali, G.; Pizzuto, C.; Angelov, C.; Faure, J.; Kilian, L.

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