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Volume 67, Number 1, 2 September 2002

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pp. 1-1(1)
Author: Szuber, J.

Surface passivation by dissociative molecular adsorption
pp. 11-20(10)
Author: Srivastava, G.P.

Adsorption of GeH2 on the bare and hydrogenated Ge(001) surfaces
pp. 21-25(5)
Authors: Cakmak, M.; Srivastava, G.P.

Isotope effect in the adsorption of H and D on the Si(111) surface from electrolytes
pp. 27-30(4)
Authors: Chikalova-Luzina, O.P.; Matsumoto, T.

Zn-induced features at the GaAs(110) surface: a first-principles study
pp. 31-35(5)
Authors: Ferraz, A.C.; Miotto, R.

Structures and electronic states of InAs (001) and (111)B surfaces passivated with sulfur studied by AES, LEED, UPS, XPS, and IPES
pp. 37-41(5)
Authors: Fukuda, Y.; Ichikawa, S.; Shimomura, M.; Sanada, N.; Suzuki, Y.

XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(100) surface
pp. 53-58(6)
Authors: Szuber, J.; Bergignat, E.; Hollinger, G.; Polakowska, A.; Koscielniak, P.

Thermal and plasma nitridation of GaSe crystal
pp. 69-73(5)
Authors: Balitskii, O.A.; Savchyn, V.P.; Stakhira, P.J.; Berchenko, N.N.

Surface preparation and effective contact formation for GaAs surface
pp. 91-100(10)
Authors: Kang, M.; Park H.-H.

Tuning Schottky barrier heights by organic modification of metal-semiconductor contacts
pp. 101-113(13)
Authors: Zahn, D.R.T.; Park, S.; Kampen, T.U.

Photoelectron emission from heterojunctions with intralayers: band-offset changes vs. band-bending effects
pp. 115-123(9)
Authors: Horn, K.; Moreno, M.; Alonso, M.; Horicke, M.; Hey, R.; Sacedon, J.L.; Ploog, K.H.

Study and characterization of the structures Au/Al2O3/Si and Au/Al0/Al2O3/Si
pp. 125-129(5)
Authors: Gruzza, B.; Akkal, B.; Bideux, L.; Benamara, Z.; Robert, C.

Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles
pp. 131-141(11)
Authors: Pinck, E.; Gleskova, H.; Mullerova, J.; Nadazdy, V.; Mraz, S.; Ortega, L.; Jergel, M.; Falcony, C.; Brunner, R.; Gmucova, K.; Zeman, M.; van Swaaij, R.A.C.M.M.; KuCera, M.; Jurani, R.; Zahoran, M.

Surface and bulk values of real part of refractive index of GaSe
pp. 143-147(5)
Authors: Kepinska, M.; Murri, R.; Nowak, M.

About an influence of Ar ion beam of very low energy on a-Si:H properties
pp. 149-153(5)
Authors: Kopani, M.; Mikula, M.; Jergel, M.; Falcony, C.; Ortega, L.; Pinck, E.

Investigation on the interface formation of ambient-pressure-dried SiO2 aerogel film deposited on GaAs
pp. 155-159(5)
Authors: Park, S.; Jung, S.; Kang, M.; Jung, H.; Park H.-H.; Kim, H.

Characteristics of interfacial bonding distribution of Gd2O3-GaAs structure
pp. 161-167(7)
Authors: Yang, J.; Kang, M.; Park H.-H.

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