Publisher: Elsevier

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Volume 65, Number 2, 19 April 2002

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Spot intensity processing in LEED images
pp. 121-126(6)
Authors: Roucka, R.; Jiruse, J.; Sikola, T.

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Phase transition and diffusion of Ni atoms in aluminum during implantation
pp. 127-132(6)
Authors: Zhang, T.; Wu, Y.; Zhang, Y.; Qian, W.

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Formation of ultra-thin PtSi film by vacuum annealing
pp. 133-136(4)
Authors: Shuang, L.; Zhiyong, Z.; Yonggong, N.; Ai, C.; Huaiwu, Z.; Jiade, Y.

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Comparison of PEEK and VESPEL(R)SP1 characteristics as vacuum seals for fusion applications
pp. 137-145(9)
Authors: Murari, A.; Vinante, C.; Monari, M.

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Influence of high power densities on the composition of pulsed magnetron plasmas
pp. 147-154(8)
Authors: Ehiasarian, A.P.; New, R.; Munz, W.; Hultman, L.; Helmersson, U.; Kouznetsov, V.

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Improvement of photocatalytic activity of TiO2 thin film by Sn ion implantation
pp. 155-159(5)
Authors: Zheng, S.K.; Wang, T.M.; Hao, W.C.; Shen, R.

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Resistivity of Si-Ni and Si-Ta layers made by magnetron sputtering method
pp. 169-175(7)
Authors: Berlicki, T.M.; Beensh-Marchwicka, G.; Prociow, E.L.; Osadnik, S.J.

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The study of InPO4/InP(100) by EELS and AES
pp. 185-191(7)
Authors: Bouslama, M.; Lounis, Z.; Ghaffour, M.; Ghamnia, M.; Jardin, C.

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Direct observation of Si-related and Ge-related ring clusters on Si(111)-(7x7) surface
pp. 207-211(5)
Authors: Yan, L.; Zhang, Y.; Peng, Y.; Gao, H.; Xie, S.; Pang, S.

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Silicon nitride deposited by inductively coupled plasma using silane and nitrogen
pp. 213-220(8)
Authors: da Silva Zambom, L.; Domingues Mansano, R.; Furlan, R.

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IUVSTA highlights seminars
pp. 221-221(1)
Author: Colligon, J.S.

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Layer growth at the nano-scale
pp. 231-234(4)
Author: Verhoeven, J.

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