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Low energy Cs+ and Cl- ion implantation into Si - SIMS investigations

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Keywords: Computer simulation; SIMS; Secondary ion emission; Sputtering yield

Document Type: Short Communication

DOI: http://dx.doi.org/10.1016/S0042-207X(01)00268-8

Affiliations: Institute of Physics, Maria Curie-Sklodowska University, Pl. M. Curie-Sklodowskiej 1, 20-031 , Lublin, Poland

Publication date: August 16, 2001

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