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Investigation of ion implantation for fabrication of p-n junctions with modified silicon surface for photovoltaic devices

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Keywords: Amorphization; Implantation; Surface modification

Document Type: Short Communication

DOI: http://dx.doi.org/10.1016/S0042-207X(01)00264-0

Affiliations: aInstitute of Electron Technology, Al.Lotnikow 32/46, 02-668 , Warsaw, Poland

Publication date: August 16, 2001

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