Some current issues in the use and application of ionised plasma for silicon semiconductor processing research

Authors: Hurley, R.E.; Gamble, H.S.

Source: Vacuum, Volume 63, Number 4, 16 August 2001 , pp. 627-639(13)

Publisher: Elsevier

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Keywords: Diffusion barriers; Etching; Gate oxide; Interconnects; PECVD; PVD; Plasma; Silicon

Document Type: Review Article

DOI: http://dx.doi.org/10.1016/S0042-207X(01)00251-2

Affiliations: Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, BT9 5AH, Belfast, UK

Publication date: August 16, 2001

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