Publisher: Elsevier

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Volume 63, Number 4, 16 August 2001

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Volume 63 contents
pp. iii-viii(6)

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Volume 63 author index
pp. ix-xi(3)

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Editorial(s)
pp. 455-456(2)
Authors: Maczka, D.; Michalak, L.

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Detection of secondary electrons in a retarding electric field
pp. 463-467(5)
Authors: Slowko, W.; Drzazga, W.

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Effect of plasma nitriding and TiN plasma deposition on stress corrosion cracking of 40HM steel
pp. 469-473(5)
Authors: Lunarska, E.; Czerniajewa, O.; Nakonieczny, A.

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Application of high intensity pulsed ion and plasma beams in modification of materials
pp. 475-481(7)
Authors: Piekoszewski, J.; Werner, Z.; Szymczyk, W.

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Modification of single crystal stainless steel structure (Fe-Cr-Ni-Mn) by high-power ion beam
pp. 483-486(4)
Authors: Pogrebnjak, A.D.; Lebed, A.G.; Ivanov, Y.F.

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Ion bombardment in surface passivation of GaAs
pp. 487-490(4)
Author: Synowiec, Z.

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Activation of Si implanted in GaAs at high intensity As co-implantation
pp. 491-494(4)
Authors: Akimov, A.N.; Vlasukova, L.A.; Bumai, Y.A.; Gorupa, K.S.

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Simulation of two-beam ion implantation in the multilayer and multicomponent targets
pp. 495-499(5)
Authors: Komarov, A.F.; Komarov, F.F.; Zukowski, P.; Karwat, C.; Kamarou, A.A.

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Using of the high-grade layered structures for the demonstration of the depth resolution of the RBS method
pp. 501-505(5)
Authors: Kobzev, A.P.; Kravtcov, E.A.; Romashev, L.N.; Semerikov, A.V.; Ustinov, V.V.

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Investigation of current sheet dynamics in the IPD accelerator
pp. 513-516(4)
Authors: Rabinski, M.; Zdunek, K.

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Cathode sputtering as a pre-treatment for gas nitriding
pp. 517-522(6)
Authors: Baranowska, J.; Szczecinski, K.; Wysiecki, M.

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Alloying of silicon on Ti6Al4V using high intensity pulsed plasma beams
pp. 523-527(5)
Authors: Richter, E.; Piekoszewski, J.; Prokert, F.; Stanislawski, J.; Walis, L.; Wieser, E.

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Fluorination effects in electron-scattering processes-comparative study
pp. 545-548(4)
Authors: Szmytkowski, C.; Ptasinska-denga, E.

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Spectrometer for the study of electron-assisted processes
pp. 549-554(6)
Authors: Szmytkowski, C.; Mozejko, P.

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Size-dependent fragmentation of carbon dioxide clusters
pp. 555-560(6)
Authors: Dabek, J.; Michalak, L.

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Electron and ion high-resolution interaction studies using sector field mass spectrometry: propane a case study
pp. 561-569(9)
Authors: Fiegele, T.; Grill, V.; Matt, S.; Lezius, M.; Hanel, G.; Probst, M.; Scheier, P.; Becker1, K.; deutsch2, H.; Echt3, O.; Stamatovic4, A.; Mark5, T.D.

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Hundred MeV heavy ion irradiation effect on boron diffusion in Si
pp. 571-575(5)
Authors: Skuratov, V.A.; Dinu, N.; Antonova, I.V.; Obodnikov, V.I.

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Formation of device isolation in GaAs with polyenergetic ion implantation
pp. 577-579(3)
Authors: Komarov, F.F.; Kamyshan, A.S.; Mironov, A.M.; Lagutin, A.E.; Martynov, I.S.

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Electrical properties of polyethylene modified by multistage ion implantation
pp. 581-583(3)
Authors: Odzhaev, V.B.; Jankovsky, O.N.; Karpovich, I.A.; Partyka, J.; Wegierek, P.

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Vavilov-Cherenkov radiation emitted by heavy ions near the threshold
pp. 591-595(5)
Authors: Ruzicka, J.; Hrmo, A.; Krupa, L.; Saro, S.; Fajnor, V.; Jesenak, K.; Kuchta, L.; Geissel, H.; Irnich, H.; Kozhuharov, C.; Magel, A.; Munzenberg, G.; Nickel, F.; Scheidenberger, C.; Schott, H.; Schwab, W.; Stohlker, T.; Voss, B.; Zrelov, V.P.; Zrelov, P.V.; Lapchik, E.D.

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Ion-sputter-modification of metal targets
pp. 597-601(5)
Authors: Wilk, J.; Przybylski, G.; Kowalski, Z.W.

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Gettering of metal impurities to cavities formed by hydrogen and helium implantation in silicon
pp. 609-612(4)
Authors: Kamarou, A.; Komarov, A.; Zukowski, P.

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Monte Carlo modeling of the IBAD growth of the optical films
pp. 613-617(5)
Authors: Oleszkiewicz, W.; Romiszowski, P.

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Optical responses of ion implanted nanoparticles in silica and glass
pp. 641-647(7)
Authors: Townsend, P.D.; Hole, D.E.

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In situ investigation of phase transitions of implanted silicon at powerful light irradiation
pp. 649-655(7)
Authors: Fattakhov, Y.V.; Galyautdinov, M.F.; L'vova, T.N.; Khaibullin, I.B.

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Structural and micromechanical properties of ion-beam mixed tungsten-on-steel system
pp. 671-677(7)
Authors: Jagielski, J.; Piatkowska, A.; Matz, W.; Richter, E.; Gawlik, G.; Turos, A.

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Morphology of working environment microparticles
pp. 679-683(5)
Authors: Konarski, P.; Iwanejko, I.; Mierzejewska, A.; Diduszko, R.

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Ion sputtering of microparticles in SIMS depth profile analysis
pp. 685-689(5)
Authors: Konarski, P.; Iwanejko, I.; Mierzejewska, A.; Wymyslowski, A.

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Analysis of the wear process of nitrogen implanted HSS stamping dies
pp. 691-695(5)
Authors: Narojczyk, J.; Werner, Z.; Piekoszewski, J.

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Hydrogen-ion implantation in GaAs
pp. 697-700(4)
Authors: Gawlik, G.; Ratajczak, R.; Turos, A.; Jagielski, J.; Bedell, S.; Lanford, W.L.

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Generation of high-intensity pulsed ion and plasma beams for material processing
pp. 701-708(8)
Authors: Werner, Z.; Piekoszewski, J.; Szymczyk, W.

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The influence of calcium and/or phosphorus ion implantation on the structure and corrosion resistance of titanium
pp. 715-719(5)
Authors: Krupa, D.; Baszkiewicz, J.; Kozubowski, J.; Barcz, A.; Sobczak, J.; Bilinski, A.; Rajchel, B.

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Investigation of ion implantation for fabrication of p-n junctions with modified silicon surface for photovoltaic devices
pp. 721-724(4)
Authors: Jaroszewicz, B.; Slysz, W.; Wegrzecki, M.; Domanski, K.; Grodecki, R.; Gawlik, G.; Kudla, A.; Wrzesinska, H.; Gorska, M.; Grabiec, P.

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The influence of high energy krypton ion irradiation on optical and electronic properties of diamond
pp. 725-730(6)
Authors: Melnikov, A.; Rusetsky, M.; Varichenko, V.; Skuratov, V.; Zaitsev, A.; Fahrner, W.R.; Partyka, J.; Wegierek, P.

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Influence of nitrogen ion implantation on tribological properties of tool steel NC10
pp. 731-736(6)
Authors: Budzynski, P.; Tarkowski, P.; Penkala, P.

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Evolution of mechanical properties in tool steel implanted with high energy nitrogen ions
pp. 737-742(6)
Authors: Budzynski, P.; Tarkowski, P.; Jartych, E.; Kobzev, A.P.

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Low energy Cs+ and Cl- ion implantation into Si - SIMS investigations
pp. 743-748(6)
Authors: Herec, J.; Sielanko, J.; Filiks, J.; Sowa, M.

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Optical properties and chemical structure of ion implanted a-SiC:H
pp. 749-753(5)
Authors: Tsvetkova, T.; Tzenov, N.; Tzolov, M.; Dimova-Malinovska, D.; Adriaenssens, G.J.; Pattyn, H.

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RBS and channeling studies of GaAs implanted with In+ ions
pp. 755-759(5)
Authors: Kulik, M.; Komarov, F.F.; Maczka, D.

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RBS and ellipsometric studies of near surface GaAs ion implanted layers
pp. 761-766(6)
Authors: Kulik, M.; Herec, J.; Romanek, J.

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Synchrotron investigation of strain profiles in the implanted semiconductors
pp. 767-773(7)
Authors: Wierzchowski, W.; Wieteska, K.; Turos, A.; Graeff, W.; Gawlik, G.

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