Analysis of photoemission lines in silicon nitrided layers formed by low-energy nitrogen ion implantation in silicon

Authors: Benkherourou O.1; Sahnoune S.; Djabi M.; Deville J.-P.

Source: Vacuum, Volume 53, Number 3, June 1999 , pp. 427-433(7)

Publisher: Elsevier

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Language: English

Document Type: Research article

DOI: 10.1016/S0042-207X(98)00465-5

Affiliations: 1: aInstitut de Physique, Universite F. Abbas de Setif, Setif DZ - 19000, , Algeria

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